UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Self-induced growth of vertical free-standing InAs nanowires on Si(111) by molecular beam epitaxy

Nanotechnology, 2010-09, Vol.21 (36), p.365602-365602

2010

Volltextzugriff (PDF)

High power continuous-wave GaSb-based superluminescent diodes as gain chips for widely tunable laser spectroscopy in the 1.95–2.45 μ m wavelength range

Applied physics letters, 2015-07, Vol.107 (1)

2015

Volltextzugriff (PDF)

Terahertz pulse generation from (111)-cut InSb and InAs crystals when illuminated by 1.55-μm femtosecond laser pulses

Optics letters, 2017-07, Vol.42 (13), p.2615-2618

2017

Volltextzugriff (PDF)

Magnetic field enhanced terahertz pulse emission from a femtosecond laser excited GaSb epitaxial layer

Electronics letters, 2016-09, Vol.52 (19), p.1627-1629

2016

Volltextzugriff (PDF)

3.6 μm GaSb-based type-I lasers with quinternary barriers, operating at room temperature

Electronics letters, 2011-08, Vol.47 (17), p.980-981

2011

Volltextzugriff (PDF)

Diameter dependent optical emission properties of InAs nanowires grown on Si

Applied physics letters, 2012-07, Vol.101 (5), p.53103

2012

Volltextzugriff (PDF)

Low-Threshold Strained Quantum-Well GaSb-Based Lasers Emitting in the 2.5- to 2.7- \mu m Wavelength Range

IEEE photonics technology letters, 2009-08, Vol.21 (16), p.1106-1108

2009

Volltextzugriff (PDF)

Comprehensive analysis of electrically-pumped GaSb-based VCSELs

Optics express, 2011-08, Vol.19 (18), p.17267-17282

2011

Volltextzugriff (PDF)

3.6 µm GaSb-based type-I lasers with quinternary barriers, operating at room temperature

Electronics letters, 2011-08, Vol.47 (17), p.1

2011

Volltextzugriff (PDF)

3.6 mu m GaSb-based type-I lasers with quinternary barriers, operating at room temperature

Electronics letters, 2011-08, Vol.47 (17), p.1-1

2011

Volltextzugriff (PDF)

High compositional homogeneity in In-rich InGaAs nanowire arrays on nanoimprinted SiO 2 /Si (111)

Applied physics letters, 2012-07, Vol.101 (4), p.43116

2012

Volltextzugriff (PDF)

3.6 [micro sign]m GaSb-based type-I lasers with quinternary barriers, operating at room temperature

Electronics letters, 2011, Vol.47 (17), p.980

2011

Volltextzugriff (PDF)

MEMS Tunable Littman-Metcalf Diode Laser at 2.2μm for Rapid Broadband Spectroscopy in Aqueous Solutions

2018 IEEE International Semiconductor Laser Conference (ISLC), 2018, p.1-2

2018

Volltextzugriff (PDF)

GaInAs/GaAsSb-based type-II micro-cavity LED with 2–3μm light emission grown on InP substrate

Journal of crystal growth, 2013-05, Vol.370, p.240-243

2013

Volltextzugriff (PDF)

Low-Threshold Strained Quantum-Well GaSb-Based Lasers Emitting in the 2.5- to 2.7-[Formula Omitted]m Wavelength Range

IEEE photonics technology letters, 2009-08, Vol.21 (16), p.1106

2009

Volltextzugriff (PDF)

High compositional homogeneity in In-rich InGaAs nanowire arrays on nanoimprinted SiO{sub 2}/Si (111)

Applied physics letters, 2012-07, Vol.101 (4)

2012

Volltextzugriff (PDF)

Low-threshold 3 µm GaInAsSb/AlGaInAsSb quantum-well lasers operating in continuous-wave up to 64 °C

IPRM 2011 - 23rd International Conference on Indium Phosphide and Related Materials, 2011, p.1-4

2011

Volltextzugriff (PDF)

Large-aperture single-mode GaSb-based BTJ-VCSELs at 2.62 µm

22nd IEEE International Semiconductor Laser Conference, 2010, p.47-48

2010

Volltextzugriff (PDF)

Extending lasing wavelength on InP with GaAsSb / GaInAs type-II active regions

ISLC 2012 International Semiconductor Laser Conference, 2012, p.22-23

2012

Volltextzugriff (PDF)

Large-area single-mode GaSb-based VCSELs using an inverted surface relief

2010 23rd Annual Meeting of the IEEE Photonics Society, 2010, p.61-62

2010

Volltextzugriff (PDF)

Ultra-low-threshold GaSb-based laser diodes at 2.65 µm

2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference, 2009, p.1-2

2009

Volltextzugriff (PDF)

Noise measurements of InGaAsP/InP laser diodes near the threshold current

Lithuanian journal of physics, 2005, Vol.45 (6), p.471-476

2005

Volltextzugriff (PDF)

Recent results on long-wavelength VCSELs: Device structures, performance and applications

IEEE Photonics Conference 2012, 2012, p.112-113

2012

Volltextzugriff (PDF)

Two-dimensional hydrodynamic modelling of AlGaN/GaN transistor-based THz detectors

Lithuanian journal of physics, 2023-01, Vol.63 (4)

2023

Volltextzugriff (PDF)

Optimization of terahertz detectors based on graphene field effect transistors by high impedance antennae

Lithuanian journal of physics, 2022-01, Vol.62 (4)

2022

Volltextzugriff (PDF)

1 – 25 von 29

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(16)
Mit Volltextzugriff
(22)

Publikationsform

Artikel
(18)
Tagungsberichte
(11)

Sprache

Englisch
(29)

Erscheinungsjahr

n.n

Thema

Science & Technology
(17)
Physical Sciences
(15)
Physics
(12)
Technology
(12)
Engineering
(10)
Engineering, Electrical & Electronic
(10)
Optics
(9)
Physics, Applied
(9)
Gas Lasers
(4)
Laser Modes
(4)
Lasers
(4)
Molecular Beam Epitaxy
(4)
Quantum Cascade Lasers
(4)
Tuning
(4)
Waveguide Lasers
(4)
Density
(3)
Diode Lasers
(3)
Indium Arsenides
(3)
Power Generation
(3)
Quantum Wells
(3)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

3 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Self-induced growth of vertical free-standing InAs nanowires on Si(111) by molecular beam epitaxy

High power continuous-wave GaSb-based superluminescent diodes as gain chips for widely tunable laser spectroscopy in the 1.95–2.45 μ m wavelength range

Terahertz pulse generation from (111)-cut InSb and InAs crystals when illuminated by 1.55-μm femtosecond laser pulses

Magnetic field enhanced terahertz pulse emission from a femtosecond laser excited GaSb epitaxial layer

3.6 μm GaSb-based type-I lasers with quinternary barriers, operating at room temperature

Diameter dependent optical emission properties of InAs nanowires grown on Si

Low-Threshold Strained Quantum-Well GaSb-Based Lasers Emitting in the 2.5- to 2.7- \mu m Wavelength Range

Comprehensive analysis of electrically-pumped GaSb-based VCSELs

3.6 µm GaSb-based type-I lasers with quinternary barriers, operating at room temperature

3.6 mu m GaSb-based type-I lasers with quinternary barriers, operating at room temperature

High compositional homogeneity in In-rich InGaAs nanowire arrays on nanoimprinted SiO 2 /Si (111)

3.6 [micro sign]m GaSb-based type-I lasers with quinternary barriers, operating at room temperature

MEMS Tunable Littman-Metcalf Diode Laser at 2.2μm for Rapid Broadband Spectroscopy in Aqueous Solutions

GaInAs/GaAsSb-based type-II micro-cavity LED with 2–3μm light emission grown on InP substrate

Low-Threshold Strained Quantum-Well GaSb-Based Lasers Emitting in the 2.5- to 2.7-[Formula Omitted]m Wavelength Range

High compositional homogeneity in In-rich InGaAs nanowire arrays on nanoimprinted SiO{sub 2}/Si (111)

Low-threshold 3 µm GaInAsSb/AlGaInAsSb quantum-well lasers operating in continuous-wave up to 64 °C

Large-aperture single-mode GaSb-based BTJ-VCSELs at 2.62 µm

Extending lasing wavelength on InP with GaAsSb / GaInAs type-II active regions

Large-area single-mode GaSb-based VCSELs using an inverted surface relief

Ultra-low-threshold GaSb-based laser diodes at 2.65 µm

Noise measurements of InGaAsP/InP laser diodes near the threshold current

Recent results on long-wavelength VCSELs: Device structures, performance and applications

Two-dimensional hydrodynamic modelling of AlGaN/GaN transistor-based THz detectors

Optimization of terahertz detectors based on graphene field effect transistors by high impedance antennae

Suchergebnisse filtern