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Noise spectroscopy of transport properties in carbon nanotube field-effect transistors

Carbon (New York), 2013-03, Vol.53, p.252-259

2013

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Quasioptical Sapphire Resonators in the Form of a Truncated Cone

Journal of lightwave technology, 2008-09, Vol.26 (17), p.3118-3123

2008

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Measurements of millimeter-wave surface resistance and temperature dependence of reactance of thin HTS films using quasi-optical dielectric resonator

IEEE transactions on applied superconductivity, 2005-06, Vol.15 (2), p.2919-2922

2005

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Design and characterization of an all-cryogenic low phase-noise sapphire K-band oscillator for satellite communication

IEEE transactions on microwave theory and techniques, 2003-01, Vol.51 (1), p.163-169

2003

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Electron transport in AlGaN/GaN HEMT-like nanowires: Effect of depletion and UV excitation

Semiconductor physics, quantum electronics, and optoelectronics, 2021-11, Vol.24 (4), p.407-412

2021

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Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures

Journal of applied physics, 2009-04, Vol.105 (7), p.073703-073703-6

2009

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Phase noise of an HTS resonator operated in the nonlinear regime

IEEE transactions on applied superconductivity, 2003-06, Vol.13 (2), p.324-327

2003

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Improvement of interface properties of AlGaN/GaN heterostructures under gamma-radiation

Applied surface science, 2008-11, Vol.255 (3), p.784-786

2008

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1/ f noise and mechanisms of the conductivity in carbon nanotube bundles

Carbon (New York), 2011-12, Vol.49 (15), p.5201-5206

2011

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Aluminium nitride–niobium multilayers and free-standing structures for MEMS

Thin solid films, 2006-10, Vol.515 (2), p.489-492

2006

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Mechanism of mobility increasing of the two-dimensional electron gas in AlGaN/GaN heterostructures under small dose gamma-quanta irradiation

Journal of applied physics, 2008, Vol.103, p.083707-1-5

2008

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Peculiarities of the thickness dependence of the superconducting properties of thin Nb films

Physica. C, Superconductivity, 2004-08, Vol.408, p.700-702

2004

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Noise spectroscopy of AlGaN/GaN HEMT structures with long channels

Journal of statistical mechanics, 2009-01, Vol.2009 (1), p.P01046-1-10

2009

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Effect of microwave treatment on current flow mechanisms in Au-Ti[B.sub.x]-Al-Ti-[n.sup.+]-n-[n.sup.+]-GaN-[Al.sub.2][O.sub.3] ohmic contacts

Semiconductors (Woodbury, N.Y.), 2010-06, Vol.44 (6), p.745

2010

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Submm-Wave Reflection and Transmission Technique for Testing and Monitoring of Biochemical Solutions

THz for CBRN and Explosives Detection and Diagnosis, 2017, p.37-42

2017

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Equilibrium and non-equilibrium 1/f noise in AlGaN/GaN TLM structures

Applied surface science, 2004-11, Vol.238 (1-4), p.143-146

2004

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Resonance and current instabilities in AlN/GaN resonant tunnelling diodes

Physica. E, Low-dimensional systems & nanostructures, 2004-03, Vol.21 (2), p.752-755

2004

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The investigation of properties of electron transport in AlGaN/GaN heterostructures

Microelectronics, 2003-05, Vol.34 (5-8), p.575-577

2003

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Influence of Small Doses of Gamma Irradiation on Transport and Noise Properties of SiC MESFETs

AIP conference proceedings, 2005, Vol.780 (1)

2005

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Low-Noise Microwave Devices: AlGaN/GaN High Electron Mobility Transistors and Oscillators

2007 International Kharkov Symposium Physics and Engrg. of Millimeter and Sub-Millimeter Waves (MSMW), 2007, Vol.1, p.55-60

Vitusevich, S.A.

2007

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Resonant tunneling effect in a periodically modulated electrical field

Physica. E, Low-dimensional systems & nanostructures, 2002-03, Vol.13 (2-4), p.811-814

2002

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Barrier Material Improvement in AlGaN/GaN Microwave Transistors Under Gamma Irradiation Treatment

MRS proceedings, 2003, Vol.764, Article C3.31

2003

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Radiation hardness of AlGaN/GaN based HEMTs

MRS proceedings, 2002, Vol.719, Article F5.4

2002

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Resonant tunnelling effect in delta doped p-n GaAs junction

Microelectronic engineering, 1999, Vol.46 (1), p.169-172

1999

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AlGaN/GaN High Electron Mobility Transistor Structures: Self-Heating Effect and Performance Degradation

IEEE transactions on device and materials reliability, 2008-09, Vol.8 (3), p.543-548

2008

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Noise spectroscopy of transport properties in carbon nanotube field-effect transistors

Quasioptical Sapphire Resonators in the Form of a Truncated Cone

Measurements of millimeter-wave surface resistance and temperature dependence of reactance of thin HTS films using quasi-optical dielectric resonator

Design and characterization of an all-cryogenic low phase-noise sapphire K-band oscillator for satellite communication

Electron transport in AlGaN/GaN HEMT-like nanowires: Effect of depletion and UV excitation

Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures

Phase noise of an HTS resonator operated in the nonlinear regime

Improvement of interface properties of AlGaN/GaN heterostructures under gamma-radiation

1/ f noise and mechanisms of the conductivity in carbon nanotube bundles

Aluminium nitride–niobium multilayers and free-standing structures for MEMS

Mechanism of mobility increasing of the two-dimensional electron gas in AlGaN/GaN heterostructures under small dose gamma-quanta irradiation

Peculiarities of the thickness dependence of the superconducting properties of thin Nb films

Noise spectroscopy of AlGaN/GaN HEMT structures with long channels

Effect of microwave treatment on current flow mechanisms in Au-Ti[B.sub.x]-Al-Ti-[n.sup.+]-n-[n.sup.+]-GaN-[Al.sub.2][O.sub.3] ohmic contacts

Submm-Wave Reflection and Transmission Technique for Testing and Monitoring of Biochemical Solutions

Equilibrium and non-equilibrium 1/f noise in AlGaN/GaN TLM structures

Resonance and current instabilities in AlN/GaN resonant tunnelling diodes

The investigation of properties of electron transport in AlGaN/GaN heterostructures

Influence of Small Doses of Gamma Irradiation on Transport and Noise Properties of SiC MESFETs

Low-Noise Microwave Devices: AlGaN/GaN High Electron Mobility Transistors and Oscillators

Resonant tunneling effect in a periodically modulated electrical field

Barrier Material Improvement in AlGaN/GaN Microwave Transistors Under Gamma Irradiation Treatment

Radiation hardness of AlGaN/GaN based HEMTs

Resonant tunnelling effect in delta doped p-n GaAs junction

AlGaN/GaN High Electron Mobility Transistor Structures: Self-Heating Effect and Performance Degradation

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