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Charge-Based MOS Transistor Modeling: The EKV Model for Low-Power and RF IC Design

1. Aufl., 2006

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Effect of bias conditions on pressure sensors based on AlGaN/GaN High Electron Mobility Transistor

Sensors and actuators. A. Physical., 2013-05, Vol.194, p.247-251

2013

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Analytical and numerical modelling of AlGaN/GaN/AlN heterostructure based cantilevers for mechanical sensing in harsh environments

Sensors and actuators. A. Physical., 2011-12, Vol.172 (1), p.27-34

2011

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Pressure and temperature dependence of GaN/AlGaN high electron mobility transistor based sensors on a sapphire membrane

Physica status solidi. C, 2012-03, Vol.9 (3-4), p.960-963

2012

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Value of biomarkers for predicting immunoglobulin A vasculitis nephritis outcome in an adult prospective cohort

Nephrology, dialysis, transplantation, 2018-09, Vol.33 (9), p.1579-1590

2018

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Analytical and numerical modelling of AlGaNnext term/previous termGaNnext term/previous termAlNnext term heterostructure based cantilevers for mechanical sensing in harsh environments

Sensors and actuators. A. Physical., 2011, Vol.172 (1), p.27-34

2011

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Analytical and numerical modeling of AlGaN/GaN/AlN heterostructure based cantilevers for mechanical sensing in harsh environments

Procedia engineering, 2010, Vol.5, p.91-94

2010

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Développer son attention et sa concentration

Fédération des Associations Vittoz de l'Institut pour la Recherche el le Contrôle Cérébral IRDC

2009

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Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments

Conference Proceedings - The 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, 2010, p.127-130

2010

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Confucianism and the Spirit of Democracy in China: The Beijing Uprising of 1989

International journal of politics, culture, and society, 1993-12, Vol.7 (2), p.329-365

Vittoz, Stanley

1993

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Study of built-in stress distribution in AlGaN/GaN/AlN heterostructure based cantilevers for mechanical sensing in harsh environments

2011 4th IEEE International Workshop on Advances in Sensors and Interfaces (IWASI), 2011, p.17-20

2011

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World War I and the Political Accommodation of Transitional Market Forces: The Case of Immigration Restriction

Politics & society, 1978-01, Vol.8 (1), p.49-78

Vittoz, Stan

1978

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The Divided Left: American Radicalism, 1900-1975 , by Milton Cantor

Canadian journal of history, 1979-08, Vol.14 (2), p.341-343

Vittoz, S. H.

1979

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Part Introduction

Charge‐Based MOS Transistor Modeling, 2006, p.131-131

2006

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The Small‐Signal Model at RF

Charge‐Based MOS Transistor Modeling, 2006, p.249-259

2006

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Introduction

Charge‐Based MOS Transistor Modeling, 2006, p.1-5

2006

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References

Charge‐Based MOS Transistor Modeling, 2006, p.291-298

2006

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Short‐Channel Effects

Charge‐Based MOS Transistor Modeling, 2006, p.167-212

2006

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The Noise Model at RF

Charge‐Based MOS Transistor Modeling, 2006, p.261-290

2006

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Part Introduction

Charge‐Based MOS Transistor Modeling, 2006, p.229-229

2006

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Temperature Effects and Matching

Charge‐Based MOS Transistor Modeling, 2006, p.111-129

2006

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Static Drain Current

Charge‐Based MOS Transistor Modeling, 2006, p.33-54

2006

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Nonideal Effects Related to the Vertical Dimension

Charge‐Based MOS Transistor Modeling, 2006, p.133-166

2006

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The Small‐Signal Model

Charge‐Based MOS Transistor Modeling, 2006, p.55-79

2006

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Part Introduction

Charge‐Based MOS Transistor Modeling, 2006, p.7-7

2006

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Charge-Based MOS Transistor Modeling: The EKV Model for Low-Power and RF IC Design

Effect of bias conditions on pressure sensors based on AlGaN/GaN High Electron Mobility Transistor

Analytical and numerical modelling of AlGaN/GaN/AlN heterostructure based cantilevers for mechanical sensing in harsh environments

Pressure and temperature dependence of GaN/AlGaN high electron mobility transistor based sensors on a sapphire membrane

Value of biomarkers for predicting immunoglobulin A vasculitis nephritis outcome in an adult prospective cohort

Analytical and numerical modelling of AlGaNnext term/previous termGaNnext term/previous termAlNnext term heterostructure based cantilevers for mechanical sensing in harsh environments

Analytical and numerical modeling of AlGaN/GaN/AlN heterostructure based cantilevers for mechanical sensing in harsh environments

Développer son attention et sa concentration

Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments

Confucianism and the Spirit of Democracy in China: The Beijing Uprising of 1989

Study of built-in stress distribution in AlGaN/GaN/AlN heterostructure based cantilevers for mechanical sensing in harsh environments

World War I and the Political Accommodation of Transitional Market Forces: The Case of Immigration Restriction

The Divided Left: American Radicalism, 1900-1975 , by Milton Cantor

Part Introduction

The Small‐Signal Model at RF

Introduction

References

Short‐Channel Effects

The Noise Model at RF

Part Introduction

Temperature Effects and Matching

Static Drain Current

Nonideal Effects Related to the Vertical Dimension

The Small‐Signal Model

Part Introduction

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