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The conduction process in pyrolytically deposited SiO 2 films

Thin solid films, 1976, Vol.38 (3), p.247-253

1976

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CV and IV characteristics of MIS structures with pyrolytic SiO2 as dielectric

Thin solid films, 1974-08, Vol.23 (1), p.15-22

1974

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CV and IV characteristics of MIS structures with pyrolytic SiO 2 as dielectric

Thin solid films, 1974, Vol.23 (1), p.15-22

1974

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The influence of the outer oxide surface conditions of MIS capacitors on the shape of their C-V curves

Thin solid films, 1980-01, Vol.70 (1), p.L5-L7

1980

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Interface states in MNOS systems

Thin solid films, 1978-01, Vol.51 (3), p.305-309

1978

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The conduction process in pyrolytically deposited SiO2 films

Thin solid films, 1976-11, Vol.38 (3), p.247-253

1976

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High field conduction processes in silicon nitride films in the presence of charge trapping

Thin solid films, 1976-01, Vol.36 (1), p.157-160

1976

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Influence of interface states on the write characteristics of MNOS memory structures

Solid-state electronics, 1979-01, Vol.22 (3), p.349-351

1979

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Temperature behaviour of MNOS structures

Physics letters. A, 1977-01, Vol.59 (6), p.481-482

1977

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M.N.O.S. memory structure with relatively thick oxide

Electronics letters, 1976-12, Vol.12 (25), p.681-681

1976

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Microstructure and properties of CVD silicon nitride films

Journal of non-crystalline solids, 1979-01, Vol.31 (3), p.429-434

1979

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Investigation of surface traps at the silicon-silicon monooxide interface by the C-V method

Solid-state electronics, 1975-01, Vol.18 (12), p.1141-1142

1975

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Hot electron effects in narrow width MOS devices

Microelectronics, 1987-11, Vol.18 (6), p.25-30

1987

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Influence of interface states on the charge injection in m.n.o.s. memory devices

IEE journal on solid-state and electron devices, 1979, Vol.3 (3), p.61

1979

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Discharge of m.n.o.s. structures

IEE journal on solid-state and electron devices, 1979, Vol.3 (1), p.17

1979

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Fabrication of buried contact silicon solar cells using porous silicon

Solar energy materials and solar cells, 2009-03, Vol.93 (3), p.297-300

2009

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The conduction process in pyrolytically deposited SiO 2 films

CV and IV characteristics of MIS structures with pyrolytic SiO2 as dielectric

CV and IV characteristics of MIS structures with pyrolytic SiO 2 as dielectric

The influence of the outer oxide surface conditions of MIS capacitors on the shape of their C-V curves

Interface states in MNOS systems

The conduction process in pyrolytically deposited SiO2 films

High field conduction processes in silicon nitride films in the presence of charge trapping

Influence of interface states on the write characteristics of MNOS memory structures

Temperature behaviour of MNOS structures

M.N.O.S. memory structure with relatively thick oxide

Microstructure and properties of CVD silicon nitride films

Investigation of surface traps at the silicon-silicon monooxide interface by the C-V method

Hot electron effects in narrow width MOS devices

Influence of interface states on the charge injection in m.n.o.s. memory devices

Discharge of m.n.o.s. structures

Fabrication of buried contact silicon solar cells using porous silicon

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