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Gaining insights into the formation of high temperature GeMn nanocolumns: the effect of substrate crystalline orientation on their structural and magnetic properties

Advances in natural sciences. Nanoscience and nanotechnology, 2020-09, Vol.11 (3), p.35011

2020

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Epitaxial growth and magnetic properties of Mn5Ge3 Ge and Mn5Ge3Cx Ge heterostructures for spintronic applications

Advances in natural sciences. Nanoscience and nanotechnology, 2013-12, Vol.4 (4)

2013

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Making germanium, an indirect band gap semiconductor, suitable for light-emitting devices

Advances in natural sciences. Nanoscience and nanotechnology, 2015-03, Vol.6 (1), p.15013-5

2015

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Very low-temperature epitaxial growth of Mn5Ge3 and Mn5Ge3C0.2 films on Ge(111) using molecular beam epitaxy

Thin solid films, 2015-08, Vol.589, p.427-432

2015

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From the Very First Stages of Mn Deposition on Ge(001) to Phase Segregation

Crystal growth & design, 2018-09, Vol.18 (9), p.5124-5129

2018

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Thermal stability of epitaxial Mn5Ge3 and carbon-doped Mn5Ge3 films

Applied physics letters, 2011-09, Vol.99 (12)

2011

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Eye Strain Detection During Online Learning

Intelligent automation and soft computing, 2023, Vol.35 (3), p.3517-3530

2023

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Strain-induced modification in the magnetic properties of Mn5Ge3 thin films

Journal of applied physics, 2013-08, Vol.114 (7)

2013

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Application of Genetic Algorithm in Optimizing LQR Control for Ball and Beam

Robotică şi management (Reșița), 2023-12, Vol.28 (2), p.48-54

2023

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Mn segregation in Ge/Mn5Ge3 heterostructures: The role of surface carbon adsorption

Applied physics letters, 2011-10, Vol.99 (15)

2011

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Atomic-order thermal nitridation of group IV semiconductors for ultra-large-scale integration

Advances in natural sciences. Nanoscience and nanotechnology, 2015-03, Vol.6 (1), p.15001-5

2015

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Fabrication of SiGe quantum dots: a new approach based on selective growth on chemically prepared H-passivated Si(100) surfaces

Thin solid films, 1998-05, Vol.321 (1), p.98-105

Le Thanh, Vinh

1998

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An unusual phenomenon of surface reaction observed during Ge overgrowth on Mn5Ge3/Ge(111) heterostructures

New journal of physics, 2012-10, Vol.14 (10), p.103020-10303

2012

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ENSO response to external forcing in CMIP5 simulations of the last millennium

Global and planetary change, 2017-01, Vol.148, p.105-112

Le, Thanh

2017

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Suppression of Mn segregation in Ge/Mn5Ge3 heterostructures induced by interstitial carbon

Thin solid films, 2012-02, Vol.520 (8), p.3410-3414

2012

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Suppression of Mn segregation in Ge/Mn 5Ge 3 heterostructures induced by interstitial carbon

Thin solid films, 2012-02, Vol.520 (8)

2012

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Vertically self-organized Ge/Si(001) quantum dots in multilayer structures

Physical review. B, Condensed matter, 1999-08, Vol.60 (8), p.5851-5857

1999

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Nucleation and growth of self-assembled Ge/Si (001) quantum dots in single and stacked layers

Thin solid films, 2000-12, Vol.380 (1), p.2-9

2000

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Carbon diffusion and reactivity in Mn5Ge3 thin films

Physica status solidi. C, 2012-06, Vol.9 (6), p.1374-1377

2012

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New insight into the kinetics of Stranski–Krastanow growth of Ge on Si(0 0 1)

Surface science, 2001-10, Vol.492 (3), p.255-269

Le Thanh, Vinh

2001

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Synthesis and properties of epitaxial semiconducting silicides

Applied surface science, 1993-11, Vol.73, p.90-101

1993

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Mn5Ge3C0.6 /Ge(1 1 1) Schottky contacts tuned by an n-type ultra-shallow doping layer

Journal of physics. D, Applied physics, 2016-08, Vol.49 (35)

2016

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Mn 5 Ge 3 C 0.6 /Ge(1 1 1) Schottky contacts tuned by an n-type ultra-shallow doping layer

Journal of physics. D, Applied physics, 2016-09, Vol.49 (35), p.355101

2016

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Magnetic anisotropy and magnetic domain structure in C-doped Mn5Ge3

Journal of applied physics, 2015-07, Vol.118 (4)

2015

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Atomic-order thermal nitridation of group IV semiconductors for ultra-large-scale integration Invited talk at the 7th International Workshop on Advanced Materials Science and Nanotechnology IWAMSN2014, 2-6 November, 2014, Ha Long, Vietnam

Advances in natural sciences. Nanoscience and nanotechnology, 2014-12, Vol.6 (1)

2014

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Gaining insights into the formation of high temperature GeMn nanocolumns: the effect of substrate crystalline orientation on their structural and magnetic properties

Epitaxial growth and magnetic properties of Mn5Ge3 Ge and Mn5Ge3Cx Ge heterostructures for spintronic applications

Making germanium, an indirect band gap semiconductor, suitable for light-emitting devices

Very low-temperature epitaxial growth of Mn5Ge3 and Mn5Ge3C0.2 films on Ge(111) using molecular beam epitaxy

From the Very First Stages of Mn Deposition on Ge(001) to Phase Segregation

Thermal stability of epitaxial Mn5Ge3 and carbon-doped Mn5Ge3 films

Eye Strain Detection During Online Learning

Strain-induced modification in the magnetic properties of Mn5Ge3 thin films

Application of Genetic Algorithm in Optimizing LQR Control for Ball and Beam

Mn segregation in Ge/Mn5Ge3 heterostructures: The role of surface carbon adsorption

Atomic-order thermal nitridation of group IV semiconductors for ultra-large-scale integration

Fabrication of SiGe quantum dots: a new approach based on selective growth on chemically prepared H-passivated Si(100) surfaces

An unusual phenomenon of surface reaction observed during Ge overgrowth on Mn5Ge3/Ge(111) heterostructures

ENSO response to external forcing in CMIP5 simulations of the last millennium

Suppression of Mn segregation in Ge/Mn5Ge3 heterostructures induced by interstitial carbon

Suppression of Mn segregation in Ge/Mn 5Ge 3 heterostructures induced by interstitial carbon

Vertically self-organized Ge/Si(001) quantum dots in multilayer structures

Nucleation and growth of self-assembled Ge/Si (001) quantum dots in single and stacked layers

Carbon diffusion and reactivity in Mn5Ge3 thin films

New insight into the kinetics of Stranski–Krastanow growth of Ge on Si(0 0 1)

Synthesis and properties of epitaxial semiconducting silicides

Mn5Ge3C0.6 /Ge(1 1 1) Schottky contacts tuned by an n-type ultra-shallow doping layer

Mn 5 Ge 3 C 0.6 /Ge(1 1 1) Schottky contacts tuned by an n-type ultra-shallow doping layer

Magnetic anisotropy and magnetic domain structure in C-doped Mn5Ge3

Atomic-order thermal nitridation of group IV semiconductors for ultra-large-scale integration Invited talk at the 7th International Workshop on Advanced Materials Science and Nanotechnology IWAMSN2014, 2-6 November, 2014, Ha Long, Vietnam

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