UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 570

Sortiert nach

High performance SiC detectors for MeV ion beams generated by intense pulsed laser plasmas

Journal of materials research, 2013-01, Vol.28 (1), p.87-93

2013

Volltextzugriff (PDF)

A novel micro-Raman technique to detect and characterize 4H-SiC stacking faults

Journal of applied physics, 2014-10, Vol.116 (16)

2014

Volltextzugriff (PDF)

Photo-electrochemical water splitting in silicon based photocathodes enhanced by plasmonic/catalytic nanostructures

Materials science & engineering. B, Solid-state materials for advanced technology, 2017-11, Vol.225, p.128-133

2017

Volltextzugriff (PDF)

Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults

Applied physics letters, 2023-08, Vol.123 (7)

2023

Volltextzugriff (PDF)

Effects of annealing temperature on the degree of inhomogeneity of nickel-silicide/SiC Schottky barrier

Journal of applied physics, 2005-07, Vol.98 (2)

2005

Volltextzugriff (PDF)

On the origin of the premature breakdown of thermal oxide on 3C-SiC probed by electrical scanning probe microscopy

Applied surface science, 2020-10, Vol.526, p.146656, Article 146656

2020

Volltextzugriff (PDF)

Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing

Journal of applied physics, 2022-12, Vol.132 (24)

2022

Volltextzugriff (PDF)

Silicon carbide detectors study for NUMEN project

EPJ Web of Conferences, 2016, Vol.117, p.10006

2016

Volltextzugriff (PDF)

Highly reproducible ideal SiC Schottky rectifiers: effects of surface preparation and thermal annealing on the Ni/6H-SiC barrier height

Applied physics. A, Materials science & processing, 2003-11, Vol.77 (6), p.827-833

2003

Volltextzugriff (PDF)

3C-SiC grown on Si by using a Si1-xGex buffer layer

Journal of crystal growth, 2019-08, Vol.519, p.1-6

2019

Volltextzugriff (PDF)

4H-SiC epitaxial layer growth by trichlorosilane (TCS)

Journal of crystal growth, 2008-12, Vol.311 (1), p.107-113

2008

Volltextzugriff (PDF)

Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillars

Materials & design, 2021-10, Vol.208, p.109833, Article 109833

2021

Volltextzugriff (PDF)

Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy

Physical chemistry chemical physics : PCCP, 2022-10, Vol.24 (39), p.24487-24494

2022

Volltextzugriff (PDF)

Silicon Carbide characterization at the n_TOF spallation source with quasi-monoenergetic fast neutrons

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2020-12, Vol.983, p.164578, Article 164578

2020

Volltextzugriff (PDF)

Electron backscattering from stacking faults in SiC by means of ab initio quantum transport calculations

Physical review. B, Condensed matter and materials physics, 2012-06, Vol.85 (23), Article 235310

2012

Volltextzugriff (PDF)

Carbonization and transition layer effects on 3C-SiC film residual stress

Journal of crystal growth, 2017-09, Vol.473, p.11-19

2017

Volltextzugriff (PDF)

Drift mobility in 4H-SiC Schottky diodes

Applied physics letters, 2005-10, Vol.87 (14), p.142105-142105-3

2005

Volltextzugriff (PDF)

Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications

Semiconductor science and technology, 2021-05, Vol.36 (5), p.55006

2021

Volltextzugriff (PDF)

Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (100) seeding layers

Journal of crystal growth, 2017-11, Vol.478, p.159-162

2017

Volltextzugriff (PDF)

Improvement of high temperature stability of nickel contacts on n-type 6H–SiC

Applied surface science, 2001-12, Vol.184 (1), p.295-298

2001

Volltextzugriff (PDF)

Performance of a thick 250 μm silicon carbide detector: stability and energy resolution

Journal of instrumentation, 2023-03, Vol.18 (3), p.C03007

2023

Volltextzugriff (PDF)

Interface state density evaluation of high quality hetero-epitaxial 3C–SiC(001) for high-power MOSFET applications

Materials science & engineering. B, Solid-state materials for advanced technology, 2015-08, Vol.198, p.14-19

2015

Volltextzugriff (PDF)

A Study of Structural Defects in 3C-SiC Hetero-Epitaxial Films

Materials science forum, 2010-01, Vol.645-648, p.371-374

2010

Volltextzugriff (PDF)

High growth rate process in a SiC horizontal CVD reactor using HCl

Microelectronic engineering, 2006, Vol.83 (1), p.48-50

2006

Volltextzugriff (PDF)

Growing bulk‐like 3C‐SiC from seeding material produced by CVD

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.np-n/a

2017

Volltextzugriff (PDF)

1 – 25 von 570

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(441)
Mit Volltextzugriff
(489)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(318)
Physical Sciences
(195)
Physics
(188)
Technology
(176)
Materials Science
(136)
Physics, Applied
(127)
Materials Science, Multidisciplinary
(91)
Engineering
(70)
Engineering, Electrical & Electronic
(63)
Humans
(60)
Life Sciences & Biomedicine
(60)
Exact Sciences And Technology
(59)
Physics, Condensed Matter
(48)
Silicon Carbide
(42)
Animals
(40)
Science & Technology - Other Topics
(40)
Male
(36)
Optics
(35)
Nanoscience & Nanotechnology
(34)
3c-Sic
(29)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

High performance SiC detectors for MeV ion beams generated by intense pulsed laser plasmas

A novel micro-Raman technique to detect and characterize 4H-SiC stacking faults

Photo-electrochemical water splitting in silicon based photocathodes enhanced by plasmonic/catalytic nanostructures

Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults

Effects of annealing temperature on the degree of inhomogeneity of nickel-silicide/SiC Schottky barrier

On the origin of the premature breakdown of thermal oxide on 3C-SiC probed by electrical scanning probe microscopy

Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing

Silicon carbide detectors study for NUMEN project

Highly reproducible ideal SiC Schottky rectifiers: effects of surface preparation and thermal annealing on the Ni/6H-SiC barrier height

3C-SiC grown on Si by using a Si1-xGex buffer layer

4H-SiC epitaxial layer growth by trichlorosilane (TCS)

Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillars

Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy

Silicon Carbide characterization at the n_TOF spallation source with quasi-monoenergetic fast neutrons

Electron backscattering from stacking faults in SiC by means of ab initio quantum transport calculations

Carbonization and transition layer effects on 3C-SiC film residual stress

Drift mobility in 4H-SiC Schottky diodes

Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications

Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (100) seeding layers

Improvement of high temperature stability of nickel contacts on n-type 6H–SiC

Performance of a thick 250 μm silicon carbide detector: stability and energy resolution

Interface state density evaluation of high quality hetero-epitaxial 3C–SiC(001) for high-power MOSFET applications

A Study of Structural Defects in 3C-SiC Hetero-Epitaxial Films

High growth rate process in a SiC horizontal CVD reactor using HCl

Growing bulk‐like 3C‐SiC from seeding material produced by CVD

Suchergebnisse filtern