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Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication

Nano letters, 2016-03, Vol.16 (3), p.1863-1868

2016

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Unlocking perpendicular magnetic anisotropy with Gd substitution in SmN

Applied physics letters, 2023-02, Vol.122 (9)

2023

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Ge doped GaN and Al0.5Ga0.5N-based tunnel junctions on top of visible and UV light emitting diodes

Journal of applied physics, 2019-12, Vol.126 (22)

2019

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Photoluminescence properties of porous GaN and (Ga,In)N/GaN single quantum well made by selective area sublimation

Optics express, 2017-12, Vol.25 (26), p.33243

2017

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Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence

Journal of applied physics, 2022-07, Vol.132 (3)

2022

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Bandwidth-unlimited polarization-maintaining metasurfaces

Science advances, 2021-01, Vol.7 (5)

2021

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Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: Influence on indirect exciton diffusion

Journal of applied physics, 2024-03, Vol.135 (9)

2024

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InGaN islands and thin films grown on epitaxial graphene

Nanotechnology, 2020-10, Vol.31 (40), p.405601-405601

2020

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Magnetoresistance of epitaxial GdN films

Journal of applied physics, 2020-12, Vol.128 (21)

2020

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Mapping of the electrostatic potentials in MOCVD and hybrid GaN tunnel junctions for InGaN/GaN blue emitting light emitting diodes by off-axis electron holography correlated with structural, chemical, and optoelectronic characterization

Journal of applied physics, 2021-07, Vol.130 (2)

2021

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Optical properties of InxGa1−xN/GaN quantum-disks obtained by selective area sublimation

Journal of crystal growth, 2017-11, Vol.477, p.262-266

2017

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Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition

Journal of applied physics, 2013-05, Vol.113 (20)

2013

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Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition

Applied physics letters, 2010-10, Vol.97 (17), p.171909-171909-3

2010

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AlN buffer layer growth for GaN epitaxy on (111) Si: Al or N first?

Journal of crystal growth, 2009-06, Vol.311 (12), p.3278-3284

2009

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Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction

Nanotechnology, 2020-11, Vol.31 (46), p.465706-465706

2020

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Role of magnetic polarons in ferromagnetic GdN

Physical review. B, Condensed matter and materials physics, 2013-01, Vol.87 (3), Article 035202

2013

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Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus Si x N y

Nanotechnology, 2023-03, Vol.34 (24), p.245602

2023

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Lasing up to 380 K in a sublimated GaN nanowire

Applied physics letters, 2020-06, Vol.116 (22)

2020

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Experimental and ab initio study of Mg doping in the intrinsic ferromagnetic semiconductor GdN

Journal of applied physics, 2018-03, Vol.123 (11)

2018

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Growth mode and electric properties of graphene and graphitic phase grown by argon–propane assisted CVD on 3C–SiC/Si and 6H–SiC

Journal of crystal growth, 2012-06, Vol.349 (1), p.27-35

2012

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Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition

Applied physics letters, 2014-02, Vol.104 (7)

2014

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Structural trends in Si dots formation on SiC surfaces using CVD environment

Journal of crystal growth, 2014-10, Vol.404, p.157-163

2014

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Molecular beam epitaxy of ferromagnetic epitaxial GdN thin films

Journal of crystal growth, 2014-10, Vol.404, p.146-151

2014

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Highly resistive epitaxial Mg-doped GdN thin films

Applied physics letters, 2015-01, Vol.106 (2)

2015

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On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy

Applied physics letters, 2011-01, Vol.98 (1), p.011914-011914-3

2011

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Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication

Unlocking perpendicular magnetic anisotropy with Gd substitution in SmN

Ge doped GaN and Al0.5Ga0.5N-based tunnel junctions on top of visible and UV light emitting diodes

Photoluminescence properties of porous GaN and (Ga,In)N/GaN single quantum well made by selective area sublimation

Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence

Bandwidth-unlimited polarization-maintaining metasurfaces

Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: Influence on indirect exciton diffusion

InGaN islands and thin films grown on epitaxial graphene

Magnetoresistance of epitaxial GdN films

Mapping of the electrostatic potentials in MOCVD and hybrid GaN tunnel junctions for InGaN/GaN blue emitting light emitting diodes by off-axis electron holography correlated with structural, chemical, and optoelectronic characterization

Optical properties of InxGa1−xN/GaN quantum-disks obtained by selective area sublimation

Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition

Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition

AlN buffer layer growth for GaN epitaxy on (111) Si: Al or N first?

Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction

Role of magnetic polarons in ferromagnetic GdN

Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus Si x N y

Lasing up to 380 K in a sublimated GaN nanowire

Experimental and ab initio study of Mg doping in the intrinsic ferromagnetic semiconductor GdN

Growth mode and electric properties of graphene and graphitic phase grown by argon–propane assisted CVD on 3C–SiC/Si and 6H–SiC

Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition

Structural trends in Si dots formation on SiC surfaces using CVD environment

Molecular beam epitaxy of ferromagnetic epitaxial GdN thin films

Highly resistive epitaxial Mg-doped GdN thin films

On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy

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