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Chemical Vapor Deposition of Organic-Inorganic Bismuth-Based Perovskite Films for Solar Cell Application

Scientific reports, 2019-07, Vol.9 (1), p.9774-8, Article 9774

2019

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High-mobility GaN-on-sapphire p-n diodes with near-unity ideality factor and large breakdown voltage

Journal of physics. D, Applied physics, 2019-07, Vol.52 (28), p.285101

2019

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Effect of Different Carbon Doping Techniques on the Dynamic Properties of GaN-on-Si Buffers

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.991-997

2017

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The effect of the inversion channel at the AlN/Si interface on the vertical breakdown characteristics of GaN-based devices

Semiconductor science and technology, 2014-11, Vol.29 (11), p.115012

2014

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Showerhead-assisted chemical vapor deposition of CsPbBr3 films for LED applications

Journal of materials research, 2021-05, Vol.36 (9), p.1813-1823

2021

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Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal-polar GaN/AlInGaN interfaces

Journal of physics. D, Applied physics, 2014-04, Vol.47 (17), p.175103

2014

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Analysis of an AlGaN/AlN Super-Lattice Buffer Concept for 650-V Low-Dispersion and High-Reliability GaN HEMTs

IEEE transactions on electron devices, 2020-03, Vol.67 (3), p.1113-1119

2020

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Effect of stress voltage on the dynamic buffer response of GaN-on-silicon transistors

Journal of applied physics, 2016-04, Vol.119 (13)

2016

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Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures

AIP advances, 2020-04, Vol.10 (4), p.045028-045028-6

2020

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Selective-area growth study of GaN micropillars for quasi-vertical Schottky diodes

Semiconductor science and technology, 2021-03, Vol.36 (3), p.34005

2021

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Investigation and reduction of RF loss induced by Al diffusion at the AlN/Si(111) interface in GaN-based HEMT buffer stacks

Semiconductor science and technology, 2021-07, Vol.36 (7), p.75008

2021

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Improved luminescence properties of MoS2 monolayers grown via MOCVD: role of pre-treatment and growth parameters

Nanotechnology, 2018-05, Vol.29 (29), p.295704-295704

2018

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Evaluation of High-Temperature High-Frequency GaN-Based LC-Oscillator Components

IEEE transactions on electron devices, 2020-11, Vol.67 (11), p.4587-4591

2020

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Limitations of threshold voltage engineering of AlGaN/GaN heterostructures by dielectric interface charge density and manipulation by oxygen plasma surface treatments

Journal of applied physics, 2016-05, Vol.119 (20)

2016

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Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis

Applied physics letters, 2008-09, Vol.93 (12), p.124103

2008

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Metalorganic Vapor-Phase Epitaxy Growth Parameters for Two-Dimensional MoS2

Journal of electronic materials, 2018-02, Vol.47 (2), p.910-916

2018

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Study on quaternary AlInGaN/GaN HFETs grown on sapphire substrates

Semiconductor science and technology, 2010-07, Vol.25 (7), p.075013

2010

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Investigation of large-area OLED devices with various grid geometries

Organic electronics, 2013-10, Vol.14 (10), p.2387-2391

2013

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Semi-polar {1 0 1} blue and green InGaN/GaN light-emitting diodes on micro-stripe patterned Si (1 0 0)

Journal of physics. D, Applied physics, 2015-11, Vol.48 (48)

2015

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Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers

Journal of electronic materials, 2013-05, Vol.42 (5), p.826-832

2013

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12 W/mm AlGaN-GaN HFETs on silicon substrates

IEEE electron device letters, 2004-07, Vol.25 (7), p.459-461

2004

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Electrothermal characterization of large-area organic light-emitting diodes employing finite-element simulation

Organic electronics, 2011-08, Vol.12 (8), p.1399-1405

2011

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Electrical properties of quasi-vertical Schottky diodes

Semiconductor science and technology, 2012-08, Vol.27 (8), p.85015

2012

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Selective MOVPE of InGaN-based LED structures on non-planar Si (111) facets of patterned Si (100) substrates

Journal of crystal growth, 2014-04, Vol.391, p.33-40

2014

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Growth Studies on Quaternary AlInGaN Layers for HEMT Application

Journal of electronic materials, 2012-05, Vol.41 (5), p.905-909

2012

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Chemical Vapor Deposition of Organic-Inorganic Bismuth-Based Perovskite Films for Solar Cell Application

High-mobility GaN-on-sapphire p-n diodes with near-unity ideality factor and large breakdown voltage

Effect of Different Carbon Doping Techniques on the Dynamic Properties of GaN-on-Si Buffers

The effect of the inversion channel at the AlN/Si interface on the vertical breakdown characteristics of GaN-based devices

Showerhead-assisted chemical vapor deposition of CsPbBr3 films for LED applications

Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal-polar GaN/AlInGaN interfaces

Analysis of an AlGaN/AlN Super-Lattice Buffer Concept for 650-V Low-Dispersion and High-Reliability GaN HEMTs

Effect of stress voltage on the dynamic buffer response of GaN-on-silicon transistors

Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures

Selective-area growth study of GaN micropillars for quasi-vertical Schottky diodes

Investigation and reduction of RF loss induced by Al diffusion at the AlN/Si(111) interface in GaN-based HEMT buffer stacks

Improved luminescence properties of MoS2 monolayers grown via MOCVD: role of pre-treatment and growth parameters

Evaluation of High-Temperature High-Frequency GaN-Based LC-Oscillator Components

Limitations of threshold voltage engineering of AlGaN/GaN heterostructures by dielectric interface charge density and manipulation by oxygen plasma surface treatments

Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis

Metalorganic Vapor-Phase Epitaxy Growth Parameters for Two-Dimensional MoS2

Study on quaternary AlInGaN/GaN HFETs grown on sapphire substrates

Investigation of large-area OLED devices with various grid geometries

Semi-polar {1 0 1} blue and green InGaN/GaN light-emitting diodes on micro-stripe patterned Si (1 0 0)

Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers

12 W/mm AlGaN-GaN HFETs on silicon substrates

Electrothermal characterization of large-area organic light-emitting diodes employing finite-element simulation

Electrical properties of quasi-vertical Schottky diodes

Selective MOVPE of InGaN-based LED structures on non-planar Si (111) facets of patterned Si (100) substrates

Growth Studies on Quaternary AlInGaN Layers for HEMT Application

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