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55‐1: Invited Paper: Yield and manufacturing challenges for microLED micro‐displays

SID International Symposium Digest of technical papers, 2024-04, Vol.55 (S1), p.481-483

2024

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The influence of post-etch InGaAs fin profile on electrical performance

Japanese Journal of Applied Physics, 2014-04, Vol.53 (4S), p.4-1-04EC20-4

2014

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38‐3: Invited Paper: Integration Challenges for MicroLED on CMOS for AR

SID International Symposium Digest of technical papers, 2024-06, Vol.55 (1), p.497-500

2024

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4‐3: MircoLED display on 300mm CMOS platform – crosstalk and optical outcoupling

SID International Symposium Digest of technical papers, 2023-06, Vol.54 (1), p.25-28

2023

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Manufacturability of microLED on CMOS for Augmented Reality Glasses

Proceedings of the International Display Workshops, 2023-12, p.176

2023

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57‐3: MircoLED Display Integration on 300mm Advanced CMOS Platform

SID International Symposium Digest of technical papers, 2022-06, Vol.53 (1), p.748-751

2022

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Silicon Nano-Pillar Test Structures for Quantitative Evaluation of Wafer Drying Induced Pattern Collapse

ECS transactions, 2011, Vol.41 (5), p.189-196

2011

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Interplay of plasma etch, strip and wet clean in patterning La2O3/HfO2-containing high-κ/metal gate stacks

Microelectronic engineering, 2011, Vol.88 (1), p.21-27

2011

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Interplay of plasma etch, strip and wet clean in patterning La sub(2)O sub(3)/HfO sub(2)-containing high-[kappa]/metal gate stacks

Microelectronic engineering, 2011-01, Vol.88 (1), p.21-27

2011

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Interplay of plasma etch, strip and wet clean in patterning La sub(2)O sub(3)/HfO sub(2)-containing high- Kappa /metal gate stacks

Microelectronic engineering, 2011-01, Vol.88 (1), p.21-27

2011

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Interplay of plasma etch, strip and wet clean in patterning La 2O 3/HfO 2-containing high-κ/metal gate stacks

Microelectronic engineering, 2011, Vol.88 (1), p.21-27

2011

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Effect of etch-clean delay time on post-etch residue removal for front-end-of-line applications

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2009-09, Vol.27 (5), p.2301-2308

2009

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The kinetics of the CF3 + CF3 and CF3 + F combination reactions at 290 K and at He-pressures of 1-6 Torr

Physical chemistry chemical physics : PCCP, 2005-03, Vol.7 (6), p.1187-1193

2005

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Integrated Silylation and Dry Development of Resist for sub-0.15.MU.m Top Surface Imaging Applications

Journal of photopolymer science and technology, 1998, Vol.11 (4), p.597-612

1998

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Interplay between Dry Etch and Wet Clean in Patterning La 2 O 3 /HfO 2 Containing High-k/metal Gate Stacks

ECS transactions, 2009-09, Vol.25 (5), p.29-36

2009

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The kinetics of the CF3 + CF3 and CF3 + F combination reactions at 290 K and at He-pressures of approximately 1-6 Torr

Physical chemistry chemical physics : PCCP, 2005-03, Vol.7 (6), p.1187-1193

2005

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Confined Chemical Cleaning: A Novel Concept Evaluated for Front End of Line Applications

Solid state phenomena, 2008, Vol.134, p.121-124

2008

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The kinetics of the CF 3 + CF 3 and CF 3 + F combination reactions at 290 K and at He-pressures of ≈1–6 Torr

Physical chemistry chemical physics : PCCP, 2005, Vol.7 (6), p.1187-1193

2005

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The Effect of Delay Between Dry Etch and Wet Clean Processing Steps on Cleaning of Post-Etch Residues

ECS transactions, 2007, Vol.11 (2), p.283-290

2007

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A Novel Concept for Contact Etch Residue Removal

ECS transactions, 2007, Vol.11 (2), p.403-407

2007

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Characterization and Residue Elimination of Hot Aluminum Etching in a Transformer Coupled Plasma Etcher

Journal of the Electrochemical Society, 1996-05, Vol.143 (5), p.1763-1768

1996

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Key contributors for improvement of line width roughness, line edge roughness, and critical dimension uniformity: 15 nm half-pitch patterning with extreme ultraviolet and self-aligned double patterning

Journal of micro/nanolithography, MEMS, and MOEMS, 2013-10, Vol.12 (4), p.41302

2013

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Silicon Nano-Pillar Test Structures for Quantitative Evaluation of Wafer Drying Induced Pattern Collapse

Meeting abstracts (Electrochemical Society), 2011-08, Vol.MA2011-02 (30), p.2042-2042

2011

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Integrated Silylation and Dry Development of Resist for sub-0.15[mu]m Top Surface Imaging Applications

Journal of photopolymer science and technology, 1998-10, Vol.11 (4), p.597

1998

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Integrated Silylation and Dry Development of Resist for sub-0.15μm Top Surface Imaging Applications

Journal of Photopolymer Science and Technology, 1998, Vol.11(4), pp.597-612

1998

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55‐1: Invited Paper: Yield and manufacturing challenges for microLED micro‐displays

The influence of post-etch InGaAs fin profile on electrical performance

38‐3: Invited Paper: Integration Challenges for MicroLED on CMOS for AR

4‐3: MircoLED display on 300mm CMOS platform – crosstalk and optical outcoupling

Manufacturability of microLED on CMOS for Augmented Reality Glasses

57‐3: MircoLED Display Integration on 300mm Advanced CMOS Platform

Silicon Nano-Pillar Test Structures for Quantitative Evaluation of Wafer Drying Induced Pattern Collapse

Interplay of plasma etch, strip and wet clean in patterning La2O3/HfO2-containing high-κ/metal gate stacks

Interplay of plasma etch, strip and wet clean in patterning La sub(2)O sub(3)/HfO sub(2)-containing high-[kappa]/metal gate stacks

Interplay of plasma etch, strip and wet clean in patterning La sub(2)O sub(3)/HfO sub(2)-containing high- Kappa /metal gate stacks

Interplay of plasma etch, strip and wet clean in patterning La 2O 3/HfO 2-containing high-κ/metal gate stacks

Effect of etch-clean delay time on post-etch residue removal for front-end-of-line applications

The kinetics of the CF3 + CF3 and CF3 + F combination reactions at 290 K and at He-pressures of 1-6 Torr

Integrated Silylation and Dry Development of Resist for sub-0.15.MU.m Top Surface Imaging Applications

Interplay between Dry Etch and Wet Clean in Patterning La 2 O 3 /HfO 2 Containing High-k/metal Gate Stacks

The kinetics of the CF3 + CF3 and CF3 + F combination reactions at 290 K and at He-pressures of approximately 1-6 Torr

Confined Chemical Cleaning: A Novel Concept Evaluated for Front End of Line Applications

The kinetics of the CF 3 + CF 3 and CF 3 + F combination reactions at 290 K and at He-pressures of ≈1–6 Torr

The Effect of Delay Between Dry Etch and Wet Clean Processing Steps on Cleaning of Post-Etch Residues

A Novel Concept for Contact Etch Residue Removal

Characterization and Residue Elimination of Hot Aluminum Etching in a Transformer Coupled Plasma Etcher

Key contributors for improvement of line width roughness, line edge roughness, and critical dimension uniformity: 15 nm half-pitch patterning with extreme ultraviolet and self-aligned double patterning

Silicon Nano-Pillar Test Structures for Quantitative Evaluation of Wafer Drying Induced Pattern Collapse

Integrated Silylation and Dry Development of Resist for sub-0.15[mu]m Top Surface Imaging Applications

Integrated Silylation and Dry Development of Resist for sub-0.15μm Top Surface Imaging Applications

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