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Movement of basal plane dislocations in GaN during electron beam irradiation

Applied physics letters, 2015-03, Vol.106 (13)

2015

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Experimental estimation of electron–hole pair creation energy in β-Ga2O3

Applied physics letters, 2021-05, Vol.118 (20)

2021

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Effect of low-energy electron irradiation on the cathodoluminescence of multiple quantum well (MQW) InGaN/GaN structures

Solid state communications, 2011-02, Vol.151 (3), p.208-211

2011

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On the nature of photosensitivity gain in Ga2O3 Schottky diode detectors: Effects of hole trapping by deep acceptors

Journal of alloys and compounds, 2021-10, Vol.879, p.160394, Article 160394

2021

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Comparative Study of Optical and Electrical Properties of Grown-In and Freshly Introduced Dislocations in GaN by SEM Methods

Journal of electronic materials, 2020-09, Vol.49 (9), p.5173-5177

2020

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Role of hole trapping by deep acceptors in electron-beam-induced current measurements in β-Ga2O3 vertical rectifiers

Journal of physics. D, Applied physics, 2020-12, Vol.53 (49)

2020

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Role of extended defects in the transformation of InGaN/GaN multiple quantum well structure optical properties under low energy electron beam irradiation

Physica status solidi. C, 2013-03, Vol.10 (3), p.464-467

2013

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Charging Effects in Al-SiO2-p-Si Structures After Low-Energy Electron Beam Irradiation

Journal of electronic materials, 2020-09, Vol.49 (9), p.5178-5183

2020

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Parasitic p–n junctions formed at V-pit defects in p-GaN

Journal of applied physics, 2021-04, Vol.129 (15)

2021

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Effect of low energy electron irradiation on optical properties of InGaN/GaN light emitting structures

Physica status solidi. C, 2011-04, Vol.8 (4), p.1265-1268

2011

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GaAs diodes for TiT2-based betavoltaic cells

Applied radiation and isotopes, 2022-01, Vol.179, p.110030-110030, Article 110030

2022

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Photosensitivity of Ga2O3 Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiation

APL materials, 2020-11, Vol.8 (11), p.111105-111105-6

2020

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Recombination and optical properties of dislocations gliding at room temperature in GaN under applied stress

Journal of alloys and compounds, 2019-03, Vol.776, p.181-186

2019

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Neutron Radiation Effects in Epitaxially Laterally Overgrown GaN Films

Journal of electronic materials, 2007-10, Vol.36 (10), p.1320-1325

2007

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Investigation of the Effect of Irradiation by a Low-Energy Electron Beam on the Capacitance–Voltage Characteristics of SiO2

Surface investigation, x-ray, synchrotron and neutron techniques, 2021-09, Vol.15 (5), p.1045-1048

2021

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Investigation of the Effect of Electron-Beam Irradiation on the Defect Structure of Laterally Overgrown GaN Films via the Induced-Current and Cathodoluminescence Methods

Surface investigation, x-ray, synchrotron and neutron techniques, 2018-09, Vol.12 (5), p.994-999

2018

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Effect of low-energy electron irradiation on the optical properties of structures containing multiple InGaN/GaN quantum well

Semiconductors (Woodbury, N.Y.), 2015-02, Vol.49 (2), p.143-148

2015

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Structural investigation of light-emitting A3B5 structures grown on Ge/Si(100) substrate

Journal of physics. Conference series, 2018-12, Vol.1124 (2), p.22037

2018

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Dislocation glide in GaN films grown by the lateral-overgrowth method induced by low-energy electron-beam irradiation

Surface investigation, x-ray, synchrotron and neutron techniques, 2016-09, Vol.10 (5), p.959-961

2016

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Structural and optical characteristics of GaAs films grown on Si/Ge substrates

Journal of physics. Conference series, 2018-03, Vol.993 (1), p.12014

2018

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Dislocation gliding and cross-hatch morphology formation in AIII-BV epitaxial heterostructures

Applied physics letters, 2014-12, Vol.105 (23)

2014

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Study of Extended Electrically Active Defects in Heterostructures Based on (Ga,Mn)As/(In,Ga)As by Electron Beam-Induced Current and Deep-Level Transient Spectroscopy

Surface investigation, x-ray, synchrotron and neutron techniques, 2019, Vol.13 (1), p.105-110

2019

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EBIC investigation of InGaN/GaN multiple quantum well structures irradiated with low energy electrons

Journal of physics. Conference series, 2011-02, Vol.281 (1), p.012013-6

2011

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Donor nonuniformity in undoped and Si doped n-GaN prepared by epitaxial lateral overgrowth

Applied physics letters, 2008-01, Vol.92 (4)

2008

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Spatial variations of doping and lifetime in epitaxial laterally overgrown GaN

Applied physics letters, 2007-04, Vol.90 (15)

2007

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Movement of basal plane dislocations in GaN during electron beam irradiation

Experimental estimation of electron–hole pair creation energy in β-Ga2O3

Effect of low-energy electron irradiation on the cathodoluminescence of multiple quantum well (MQW) InGaN/GaN structures

On the nature of photosensitivity gain in Ga2O3 Schottky diode detectors: Effects of hole trapping by deep acceptors

Comparative Study of Optical and Electrical Properties of Grown-In and Freshly Introduced Dislocations in GaN by SEM Methods

Role of hole trapping by deep acceptors in electron-beam-induced current measurements in β-Ga2O3 vertical rectifiers

Role of extended defects in the transformation of InGaN/GaN multiple quantum well structure optical properties under low energy electron beam irradiation

Charging Effects in Al-SiO2-p-Si Structures After Low-Energy Electron Beam Irradiation

Parasitic p–n junctions formed at V-pit defects in p-GaN

Effect of low energy electron irradiation on optical properties of InGaN/GaN light emitting structures

GaAs diodes for TiT2-based betavoltaic cells

Photosensitivity of Ga2O3 Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiation

Recombination and optical properties of dislocations gliding at room temperature in GaN under applied stress

Neutron Radiation Effects in Epitaxially Laterally Overgrown GaN Films

Investigation of the Effect of Irradiation by a Low-Energy Electron Beam on the Capacitance–Voltage Characteristics of SiO2

Investigation of the Effect of Electron-Beam Irradiation on the Defect Structure of Laterally Overgrown GaN Films via the Induced-Current and Cathodoluminescence Methods

Effect of low-energy electron irradiation on the optical properties of structures containing multiple InGaN/GaN quantum well

Structural investigation of light-emitting A3B5 structures grown on Ge/Si(100) substrate

Dislocation glide in GaN films grown by the lateral-overgrowth method induced by low-energy electron-beam irradiation

Structural and optical characteristics of GaAs films grown on Si/Ge substrates

Dislocation gliding and cross-hatch morphology formation in AIII-BV epitaxial heterostructures

Study of Extended Electrically Active Defects in Heterostructures Based on (Ga,Mn)As/(In,Ga)As by Electron Beam-Induced Current and Deep-Level Transient Spectroscopy

EBIC investigation of InGaN/GaN multiple quantum well structures irradiated with low energy electrons

Donor nonuniformity in undoped and Si doped n-GaN prepared by epitaxial lateral overgrowth

Spatial variations of doping and lifetime in epitaxial laterally overgrown GaN

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