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Measurements and extractions of parasitic capacitances in ULSI layouts

IEEE transactions on electron devices, 2003-11, Vol.50 (11), p.2236-2247

2003

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Crosstalk-based capacitance measurements: theory and applications

IEEE transactions on semiconductor manufacturing, 2006-02, Vol.19 (1), p.67-77

2006

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An Analysis of Temperature Impact on MOSFET Mismatch

2009 IEEE International Conference on Microelectronic Test Structures, 2009, p.56-61

2009

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Combined test structure for systematic and stochastic mosfets and gate resistance process variation assessment

2010 International Conference on Microelectronic Test Structures (ICMTS), 2010, p.226-230

2010

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Tools for contactless testing and simulation of CMOS circuits

Microelectronics and reliability, 2001-11, Vol.41 (11), p.1801-1808

2001

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Measurement of the electron ionization coefficient at low electric fields in InGaAs-based heterojunction bipolar transistors

Applied physics letters, 1995-02, Vol.66 (9), p.1095-1097

1995

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3D Simulation study of gate coupling and gate cross-interference in advanced floating gate non-volatile memories

Solid-state electronics, 2005-11, Vol.49 (11), p.1805-1812

2005

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Metal and Dielectric Thickness: a Comprehensive Methodology for Back-End Electrical Characterization

2009 IEEE International Conference on Microelectronic Test Structures, 2009, p.196-200

2009

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Influence of impact-ionization-induced base current reversal on bipolar transistor parameters

IEEE transactions on electron devices, 1995-09, Vol.42 (9), p.1636-1646

1995

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Investigation on Base-Emitter Reverse Biasing: Light Emission, Junction Cross-Talk and Hot Carriers in Single-Polysilicon Quasi Self-Aligned Bipolar-Complementary Metal-Oxide Semiconductor Bipolar Transistors

Japanese Journal of Applied Physics, 1999-08, Vol.38 (8R), p.4648

1999

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Hot-carrier degradation and oxide charge build-up in self-aligned etched-polysilicon npn bipolar transistors

IEEE transactions on electron devices, 1997-11, Vol.44 (11), p.2059-2063

1997

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On-wafer integrated system for fast characterization and parametric test of new-generation Non Volatile Memories

2013 IEEE International Conference on Microelectronic Test Structures (ICMTS), 2013, p.195-199

2013

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Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJT's by means of a nonlocal analytical model for the avalanche multiplication factor

IEEE transactions on electron devices, 1993-12, Vol.40 (12), p.2296-2300

1993

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Retarding effect of surface base compensation on degradation of noise characteristics of BiCMOS BJTs

Microelectronics and reliability, 1997-10, Vol.37 (10), p.1603-1606

1997

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Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJT's

IEEE electron device letters, 1993-02, Vol.14 (2), p.69-71

1993

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Reliability improvement of single-poly quasi self-aligned bicmos bjts using base surface arsenic compensation

Microelectronics and reliability, 1996-11, Vol.36 (11-12), p.1827-1830

1996

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Characterization and modeling methodology for the evaluation of statistical variation of MOSFETs

2012 IEEE International Conference on Microelectronic Test Structures, 2012, p.229-232

2012

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Cardiovascular complications related to cocaine use: a case report

Critical care (London, England), 2007, Vol.11 (Suppl 3), p.P41-P41

2007

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Upper gastrointestinal bleeding prophylaxis: gap between guidelines and clinical practice

Critical care (London, England), 2007, Vol.11 (Suppl 3), p.P106-P106

2007

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First results of a sepsis protocol at Diadema State Hospital

Critical care (London, England), 2011-01, Vol.15 (S2), p.P12-P12, Article P12

2011

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Spacing impact on MOSFET mismatch

2008 IEEE International Conference on Microelectronic Test Structures, 2008, p.90-95

2008

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New applications of cross-talk-based capacitance measurements [CMOS ICs]

Proceedings of the 2005 International Conference on Microelectronic Test Structures, 2005. ICMTS 2005, 2005, p.257-261

2005

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Degradation mechanisms in polysilicon emitter bipolar junction transistors for digital applications

Microelectronics and reliability, 2000-02, Vol.40 (2), p.207-230

2000

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Time domain approach for the evaluation of RC delays effects in ULSI interconnect lines

Proceedings. 9th IEEE Workshop on Signal Propagation on Interconnects, 2005, 2005, p.139-142

2005

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A new test structure for measuring on-chip cross-coupling capacitances

Proceedings. 8th IEEE Workshop on Signal Propagation on Interconnects, 2004, p.165-166

2004

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Measurements and extractions of parasitic capacitances in ULSI layouts

Crosstalk-based capacitance measurements: theory and applications

An Analysis of Temperature Impact on MOSFET Mismatch

Combined test structure for systematic and stochastic mosfets and gate resistance process variation assessment

Tools for contactless testing and simulation of CMOS circuits

Measurement of the electron ionization coefficient at low electric fields in InGaAs-based heterojunction bipolar transistors

3D Simulation study of gate coupling and gate cross-interference in advanced floating gate non-volatile memories

Metal and Dielectric Thickness: a Comprehensive Methodology for Back-End Electrical Characterization

Influence of impact-ionization-induced base current reversal on bipolar transistor parameters

Investigation on Base-Emitter Reverse Biasing: Light Emission, Junction Cross-Talk and Hot Carriers in Single-Polysilicon Quasi Self-Aligned Bipolar-Complementary Metal-Oxide Semiconductor Bipolar Transistors

Hot-carrier degradation and oxide charge build-up in self-aligned etched-polysilicon npn bipolar transistors

On-wafer integrated system for fast characterization and parametric test of new-generation Non Volatile Memories

Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJT's by means of a nonlocal analytical model for the avalanche multiplication factor

Retarding effect of surface base compensation on degradation of noise characteristics of BiCMOS BJTs

Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJT's

Reliability improvement of single-poly quasi self-aligned bicmos bjts using base surface arsenic compensation

Characterization and modeling methodology for the evaluation of statistical variation of MOSFETs

Cardiovascular complications related to cocaine use: a case report

Upper gastrointestinal bleeding prophylaxis: gap between guidelines and clinical practice

First results of a sepsis protocol at Diadema State Hospital

Spacing impact on MOSFET mismatch

New applications of cross-talk-based capacitance measurements [CMOS ICs]

Degradation mechanisms in polysilicon emitter bipolar junction transistors for digital applications

Time domain approach for the evaluation of RC delays effects in ULSI interconnect lines

A new test structure for measuring on-chip cross-coupling capacitances

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