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Power improvement of AlGaAs/InGaAs PHEMTs by using low gamma radiation dose

Microelectronic engineering, 2010-11, Vol.87 (11), p.2443-2447

2010

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DC electrical performance improvement of AlGaAs/InGaAs PHEMTs by using low thermal neutron radiation dose

Electronics letters, 2010-04, Vol.46 (9), p.650-652

2010

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X-band power characterisation of AlInN/AlN/GaN HEMT grown on SiC substrate

Electronics letters, 2007, Vol.43 (23), p.1317-1318

2007

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High linearity performances of GaN HEMT devices on silicon substrate at 4 GHz

IEEE electron device letters, 2002-08, Vol.23 (8), p.461-463

2002

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First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology

Microwave and optical technology letters, 2005-08, Vol.46 (4), p.311-315

2005

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Impact of plasma pre-treatment before SiNx passivation on AlGaN/GaN HFETs electrical traps

Solid-state electronics, 2005-10, Vol.49 (10), p.1589-1594

2005

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High power and linearity performances of gallium nitride HEMT devices on sapphire substrate

Electronics letters, 2005-01, Vol.41 (1), p.46-47

2005

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MBE growth of ALGaN/GaN HEMTS on resistive Si(1 1 1) substrate with RF small signal and power performances

Journal of crystal growth, 2003-04, Vol.251 (1), p.811-815

2003

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Dimethyl fumarate in patients admitted to hospital with COVID-19 (RECOVERY): a randomised, controlled, open-label, platform trial

Nature communications, 2024-01, Vol.15 (1), p.924-924, Article 924

2024

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Power results at 4 GHz of AlGaN/GaN HEMTs on high resistive silicon [111] substrate

IEEE microwave and wireless components letters, 2003-03, Vol.13 (3), p.99-101

2003

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Load impedance influence on the ID(YDS) characteristics of AlGaN/GaN HEMTs in large signal regime at 4 GHz

IEEE electron device letters, 2002-05, Vol.23 (5), p.246

2002

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High-power AlGaN∕GaN HEMTs on resistive silicon substrate

Electronics letters, 2002-07, Vol.38 (14), p.750-752

2002

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Load impedance influence on the I/sub D/(Y/sub DS/) characteristics of AlGaN/GaN HEMTs in large signal regime at 4 GHz

IEEE electron device letters, 2002-05, Vol.23 (5), p.246-248

2002

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Immunomodulatory therapy in children with paediatric inflammatory multisystem syndrome temporally associated with SARS-CoV-2 (PIMS-TS, MIS-C; RECOVERY): a randomised, controlled, open-label, platform trial

The lancet child & adolescent health, 2024-03, Vol.8 (3), p.190-200

2024

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ANN model for AlGaN/GaN HEMTs constructed from near-optimal-load large-signal measurements

IEEE MTT-S International Microwave Symposium Digest, 2003, 2003, Vol.1, p.447-450 vol.1

2003

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Power improvement of AlGaAs/InGaAs PHEMTs by using low gamma radiation dose

Microelectronic engineering, 2010

2010

Volltextzugriff (PDF)

DC electrical performance improvement of AlGaAs/InGaAs PHEMTs by using low thermal neutron radiation dose

Electronics letters, 2010-04, Vol.46 (9), p.1-1

2010

Volltextzugriff (PDF)

DC electrical performances improvement of AlGaAs/InGaAs PHEMTs by using low thermal neutron radiation dose

Electronics letters, 2010, Vol.46, p.650-652

2010

Volltextzugriff (PDF)

DC electrical performances improvement of AlGaAs/InGaAs PHEMTs by using low thermal neutrons radiation dose

Electronics letters, 2010

2010

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A case-control study of Parkinson's disease and tobacco use: Gene-tobacco interactions

Movement disorders, 2010-05, Vol.25 (7), p.912-919

2010

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Low microwave noise of AlGaN/GaN HEMTs fabricated on SiCopSiC substrates

Electronics letters, 2010-01, Vol.46 (1), p.1-1

2010

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Low microwave noise of AIGaN/GaN HEMTs fabricated on SiCopSiC substrates

Electronics letters, 2010, Vol.46 (1), p.84-85

2010

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Low microwave noise of AlGaN/GaN HEMTs fabricated on SiCopSiC substrates

Electronics letters, 2010, Vol.46 (1), p.84-85

2010

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X-band power characterisation of AlInN/AlN/GaN HEMT grown on SiC substrate

Electronics letters, 2007-11, Vol.43 (23), p.1-1

2007

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Power improvement of AlGaAs/InGaAs PHEMTs by using low gamma radiation dose

DC electrical performance improvement of AlGaAs/InGaAs PHEMTs by using low thermal neutron radiation dose

X-band power characterisation of AlInN/AlN/GaN HEMT grown on SiC substrate

High linearity performances of GaN HEMT devices on silicon substrate at 4 GHz

First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology

Impact of plasma pre-treatment before SiNx passivation on AlGaN/GaN HFETs electrical traps

High power and linearity performances of gallium nitride HEMT devices on sapphire substrate

MBE growth of ALGaN/GaN HEMTS on resistive Si(1 1 1) substrate with RF small signal and power performances

Acute Cerebrovascular Disease in the Young: The Stroke in Young Fabry Patients Study

Dimethyl fumarate in patients admitted to hospital with COVID-19 (RECOVERY): a randomised, controlled, open-label, platform trial

Power results at 4 GHz of AlGaN/GaN HEMTs on high resistive silicon [111] substrate

Load impedance influence on the ID(YDS) characteristics of AlGaN/GaN HEMTs in large signal regime at 4 GHz

High-power AlGaN∕GaN HEMTs on resistive silicon substrate

Load impedance influence on the I/sub D/(Y/sub DS/) characteristics of AlGaN/GaN HEMTs in large signal regime at 4 GHz

Immunomodulatory therapy in children with paediatric inflammatory multisystem syndrome temporally associated with SARS-CoV-2 (PIMS-TS, MIS-C; RECOVERY): a randomised, controlled, open-label, platform trial

ANN model for AlGaN/GaN HEMTs constructed from near-optimal-load large-signal measurements

Power improvement of AlGaAs/InGaAs PHEMTs by using low gamma radiation dose

DC electrical performance improvement of AlGaAs/InGaAs PHEMTs by using low thermal neutron radiation dose

DC electrical performances improvement of AlGaAs/InGaAs PHEMTs by using low thermal neutron radiation dose

DC electrical performances improvement of AlGaAs/InGaAs PHEMTs by using low thermal neutrons radiation dose

A case-control study of Parkinson's disease and tobacco use: Gene-tobacco interactions

Low microwave noise of AlGaN/GaN HEMTs fabricated on SiCopSiC substrates

Low microwave noise of AIGaN/GaN HEMTs fabricated on SiCopSiC substrates

Low microwave noise of AlGaN/GaN HEMTs fabricated on SiCopSiC substrates

X-band power characterisation of AlInN/AlN/GaN HEMT grown on SiC substrate

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