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Influence of variation of electrical parameters values of RGB LEDs on the radiation uniformity of LED displays at minimal luminosity grade

Tekhnologii͡a︡ i konstruirovanie v ėlektronnoĭ apparature, 2017-06 (3), p.30-35

2017

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Non-destructive control of critical defects and diagnostics of InGaN/GaN heterostructures in power LEDs by using their microplasma characteristics

Materials research express, 2015-05, Vol.2 (5), p.55902

2015

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Dependence of the melting threshold of CdTe on the wavelength and pulse duration of laser radiation

Semiconductor physics, quantum electronics, and optoelectronics, 2020-03, Vol.23 (1), p.102-109

2020

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On the formation of nanostructures on a CdTe surface, stimulated by surface acoustic waves under nanosecond laser irradiation

Semiconductors (Woodbury, N.Y.), 2015-02, Vol.49 (2), p.229-233

2015

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Dependence of the CdTe Melting Threshold on the Pulse Duration and Wavelength of Laser Radiation and the Parameters of Non-Equilibrium Charge Carriers

Ukrainian journal of physics (Kiev), 2017-01, Vol.62 (2), p.159-165

2017

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On the shift of the electroluminescence spectra of In{sub x}Ga{sub 1−x}N/GaN structures with various indium contents and various substrate materials caused by the stark effect and mechanical stresses

Semiconductors (Woodbury, N.Y.), 2015-08, Vol.49 (8)

2015

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On the shift of the electroluminescence spectra of In x Ga1 − x N/GaN structures with various indium contents and various substrate materials caused by the stark effect and mechanical stresses

Semiconductors (Woodbury, N.Y.), 2015-08, Vol.49 (8), p.1007-1011

2015

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Microplasma breakdown of InGaN/GaN heterostructures in high-power light-emitting diodes

Journal of applied spectroscopy, 2013-03, Vol.80 (1), p.117-123

2013

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On the shift of the electroluminescence spectra of InxGa1 − xN/GaN structures with various indium contents and various substrate materials caused by the stark effect and mechanical stresses

Semiconductors (Woodbury, N.Y.), 2015, Vol.49 (8), p.1007-1011

2015

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Visible Luminescence of the InGaN/GaN Ultraviolet Light-emitting Diodes 365 nm

Journal of Nano- and Electronic Physics, 2017, Vol.9 (5), p.5031-5031-5

2017

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Melting Threshold and Thermal Conductivity of CdTe Under Pulsed Laser Irradiation

Engineering for Sustainable Future, 2020, p.101-109

2020

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Doping of Cadmium Telluride by Indium at Nanosecond Laser Irradiation of In/CdTe Structure

Journal of materials science and engineering. B, 2012-04, Vol.2 (4), p.230-239

2012

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Acoustic emission of structures basis on the A3B5 compounds

The Journal of the Acoustical Society of America, 2008-05, Vol.123 (5_Supplement), p.3700-3700

2008

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Acoustic-emission method for controlling the defect-formation process in light-emitting structures

Semiconductor physics, quantum electronics, and optoelectronics, 2010-09, Vol.13 (3), p.326-329

Lyashenko, O. V.

2010

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Effect of neutron irradiation on characteristics of power ІnGaN/GaN light-emitting diodes

I͡A︡derna fizyka ta enerhetyka, 2015-12, Vol.16 (4), p.362-366

2015

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Microplasmas avalanche breakdown as a diagnostic tool and reliability appreciating of the INGAN/GAN high-power LEDs

2013 22nd International Conference on Noise and Fluctuations (ICNF), 2013, p.1-3

2013

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Nonlinear laser ultrasound formation in silicon

AIP advances, 2016-10, Vol.6 (10), p.105306-105306-6

2016

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Acoustic emission and fluctuations of electroluminescence intensity in light-emitting heterostructures

Semiconductor physics, quantum electronics, and optoelectronics, 2009-12, Vol.13 (1), p.79-83

Veleschuk, V.P.

2009

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THE MECHANISMS OF THE APPEARANCE OF VISIBLE PARASITIC LUMINESCENCE IN THE ULTRAVIOLET LED’s 365 nm

Optoèlektronika i poluprovodnikovaâ tehnika, 2018-12, Vol.53, p.181-187

Veleschuk, V.P.

2018

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Acoustic Emission, Electroluminescence Intensity Surface Distribution and Light Fluctuations Correlation in GaAsP/GaP and InGaN/GaN structures

Noise and Fluctuations (AIP Conference Proceedings Volume 1129), 2009, Vol.1129, p.395-398

2009

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Influence of variation of electrical parameters values of RGB LEDs on the radiation uniformity of LED displays at minimal luminosity grade

Non-destructive control of critical defects and diagnostics of InGaN/GaN heterostructures in power LEDs by using their microplasma characteristics

Dependence of the melting threshold of CdTe on the wavelength and pulse duration of laser radiation

On the formation of nanostructures on a CdTe surface, stimulated by surface acoustic waves under nanosecond laser irradiation

Dependence of the CdTe Melting Threshold on the Pulse Duration and Wavelength of Laser Radiation and the Parameters of Non-Equilibrium Charge Carriers

On the shift of the electroluminescence spectra of In{sub x}Ga{sub 1−x}N/GaN structures with various indium contents and various substrate materials caused by the stark effect and mechanical stresses

On the shift of the electroluminescence spectra of In x Ga1 − x N/GaN structures with various indium contents and various substrate materials caused by the stark effect and mechanical stresses

Microplasma breakdown of InGaN/GaN heterostructures in high-power light-emitting diodes

On the shift of the electroluminescence spectra of InxGa1 − xN/GaN structures with various indium contents and various substrate materials caused by the stark effect and mechanical stresses

Visible Luminescence of the InGaN/GaN Ultraviolet Light-emitting Diodes 365 nm

Melting Threshold and Thermal Conductivity of CdTe Under Pulsed Laser Irradiation

Doping of Cadmium Telluride by Indium at Nanosecond Laser Irradiation of In/CdTe Structure

Acoustic emission of structures basis on the A3B5 compounds

Acoustic-emission method for controlling the defect-formation process in light-emitting structures

Effect of neutron irradiation on characteristics of power ІnGaN/GaN light-emitting diodes

Microplasmas avalanche breakdown as a diagnostic tool and reliability appreciating of the INGAN/GAN high-power LEDs

Nonlinear laser ultrasound formation in silicon

Acoustic emission and fluctuations of electroluminescence intensity in light-emitting heterostructures

THE MECHANISMS OF THE APPEARANCE OF VISIBLE PARASITIC LUMINESCENCE IN THE ULTRAVIOLET LED’s 365 nm

Acoustic Emission, Electroluminescence Intensity Surface Distribution and Light Fluctuations Correlation in GaAsP/GaP and InGaN/GaN structures

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