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Anisotropic constitutive equations and experimental tensile behavior of brain tissue

Biomechanics and modeling in mechanobiology, 2006-03, Vol.5 (1), p.53-61

2006

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Identification and compensation of Preisach hysteresis models for magnetostrictive actuators

Physica. B, Condensed matter, 2001-12, Vol.306 (1), p.161-165

2001

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Thermal damage in SiC Schottky diodes induced by SE heavy ions

Microelectronics and reliability, 2014-09, Vol.54 (9-10), p.2200-2206

2014

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Turn-off instabilities in large area IGBTs

Microelectronics and reliability, 2014-09, Vol.54 (9-10), p.1927-1934

2014

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Scattering parameter approach applied to the stability analysis of power IGBTs in short circuit

Microelectronics and reliability, 2013-09, Vol.53 (9-11), p.1707-1712

2013

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Heavy-Ion Induced Single Event Gate Damage in Medium Voltage Power MOSFETs

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3573-3581

2009

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Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET

Microelectronics and reliability, 2010-09, Vol.50 (9), p.1842-1847

2010

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Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure

Microelectronics and reliability, 2012-09, Vol.52 (9-10), p.2363-2367

2012

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Developments on DC/DC converters for the LHC experiment upgrades

Journal of instrumentation, 2014-02, Vol.9 (2), p.C02017-C02017

2014

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Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit

Microelectronics and reliability, 2019-09, Vol.100-101, p.113454, Article 113454

2019

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Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests

Microelectronics and reliability, 2018-09, Vol.88-90, p.677-683

2018

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Visual function in infants with non‐syndromic craniosynostosis

Developmental medicine and child neurology, 2007-08, Vol.49 (8), p.574-576

2007

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Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit

Microelectronics and reliability, 2017-09, Vol.76-77, p.314-320

2017

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Longitudinal assessment of visual development in non-syndromic craniosynostosis: a 1-year pre- and post-surgical study

Archives of disease in childhood, 2008-11, Vol.93 (11), p.932-935

2008

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Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes

IEEE transactions on nuclear science, 2015-02, Vol.62 (1), p.202-209, Article 202

2015

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Power converters for future LHC experiments

Journal of instrumentation, 2012-03, Vol.7 (3), p.1-15

2012

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Physical mechanisms for gate damage induced by heavy ions in SiC power MOSFET

Microelectronics and reliability, 2020-11, Vol.114, p.113903, Article 113903

2020

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A new test methodology for an exhaustive study of single-event-effects on power MOSFETs

Microelectronics and reliability, 2011-09, Vol.51 (9-11), p.1995-1998

2011

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Power supply distribution system for calorimeters at the LHC beyond the nominal luminosity

Journal of instrumentation, 2011-06, Vol.6 (6), p.P06005-17

2011

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Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions

Microelectronics and reliability, 2009-09, Vol.49 (9), p.1033-1037

2009

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Measure of high frequency input impedance to study the instability of power devices in short circuit

Microelectronics and reliability, 2018-09, Vol.88-90, p.540-544

2018

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Experimental evidence of “latent gate oxide damages” in medium voltage power MOSFET as a result of heavy ions exposure

Microelectronics and reliability, 2008-08, Vol.48 (8), p.1306-1309

2008

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Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation

Microelectronics and reliability, 2018-09, Vol.88-90, p.941-945

2018

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Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT

Microelectronics and reliability, 2015-08, Vol.55 (9-10), p.1496-1500

2015

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Experimental and Numerical investigation about SEB/SEGR of Power MOSFET

Microelectronics and reliability, 2005-09, Vol.45 (9), p.1711-1716

2005

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Anisotropic constitutive equations and experimental tensile behavior of brain tissue

Identification and compensation of Preisach hysteresis models for magnetostrictive actuators

Thermal damage in SiC Schottky diodes induced by SE heavy ions

Turn-off instabilities in large area IGBTs

Scattering parameter approach applied to the stability analysis of power IGBTs in short circuit

Heavy-Ion Induced Single Event Gate Damage in Medium Voltage Power MOSFETs

Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET

Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure

Developments on DC/DC converters for the LHC experiment upgrades

Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit

Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests

Visual function in infants with non‐syndromic craniosynostosis

Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit

Longitudinal assessment of visual development in non-syndromic craniosynostosis: a 1-year pre- and post-surgical study

Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes

Power converters for future LHC experiments

Physical mechanisms for gate damage induced by heavy ions in SiC power MOSFET

A new test methodology for an exhaustive study of single-event-effects on power MOSFETs

Power supply distribution system for calorimeters at the LHC beyond the nominal luminosity

Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions

Measure of high frequency input impedance to study the instability of power devices in short circuit

Experimental evidence of “latent gate oxide damages” in medium voltage power MOSFET as a result of heavy ions exposure

Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation

Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT

Experimental and Numerical investigation about SEB/SEGR of Power MOSFET

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