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High efficiency radio frequency antennas for amplifier free quantum sensing applications

Review of scientific instruments, 2023-04, Vol.94 (4)

2023

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Conductivity in transparent oxide semiconductors

Journal of physics. Condensed matter, 2011-08, Vol.23 (33), p.334214

2011

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Origin of High Mobility in Molybdenum-Doped Indium Oxide

Chemistry of materials, 2015-04, Vol.27 (8), p.2788-2796

2015

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Temperature dependence of the direct bandgap and transport properties of CdO

Applied physics letters, 2013-01, Vol.102 (2)

2013

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Realization of Vertically Aligned, Ultrahigh Aspect Ratio InAsSb Nanowires on Graphite

Nano letters, 2015-07, Vol.15 (7), p.4348-4355

2015

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Intrinsic electron accumulation at clean InN surfaces

Physical review letters, 2004-01, Vol.92 (3), p.036804-036804, Article 036804

2004

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Surface band-gap narrowing in quantized electron accumulation layers

Physical review letters, 2010-06, Vol.104 (25), p.256803-256803, Article 256803

2010

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Growth of ZnSnN2 by Molecular Beam Epitaxy

Journal of electronic materials, 2014-04, Vol.43 (4), p.884-888

2014

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Giant reduction of InN surface electron accumulation: compensation of surface donors by Mg dopants

Physical review letters, 2012-12, Vol.109 (24), p.247605-247605, Article 247605

2012

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Optical absorption by dilute GaNSb alloys: Influence of N pair states

Applied physics letters, 2013-07, Vol.103 (4)

2013

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Quantized electron accumulation states in indium nitride studied by angle-resolved photoemission spectroscopy

Physical review letters, 2006-12, Vol.97 (23), p.237601-237601, Article 237601

2006

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Surface Structure and Electronic Properties of In2O3(111) Single-Crystal Thin Films Grown on Y-Stabilized ZrO2(111)

Chemistry of materials, 2009-10, Vol.21 (19), p.4353-4355

2009

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Origin of electron accumulation at wurtzite InN surfaces

Physical review. B, Condensed matter and materials physics, 2004-05, Vol.69 (20), p.201307.1-201307.4, Article 201307

2004

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Molecular-beam epitaxy and lattice parameter of GaNxSb1−x: deviation from Vegard's law for x > 0.02

Journal of physics. D, Applied physics, 2013-07, Vol.46 (26)

2013

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Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations

Physical review. B, Condensed matter and materials physics, 2009-05, Vol.79 (20), Article 205205

2009

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Surface electron accumulation and the charge neutrality level in In2O3

Physical review letters, 2008-09, Vol.101 (11), p.116808-116808

2008

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Structural, electrical and optical characterization of MOCVD grown In-rich InGaN layers

Journal of crystal growth, 2012-11, Vol.358, p.51-56

2012

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The influence of conduction band plasmons on core-level photoemission spectra of InN

Surface science, 2008-02, Vol.602 (4), p.871-875

2008

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Growth, disorder, and physical properties of ZnSnN2

Applied physics letters, 2013-07, Vol.103 (4)

2013

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Inversion and accumulation layers at InN surfaces

Journal of crystal growth, 2006-03, Vol.288 (2), p.268-272

2006

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Growth and properties of GaSbBi alloys

Applied physics letters, 2013-09, Vol.103 (14)

2013

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Observation of shallow-donor muonium in Ga2O3: Evidence for hydrogen-induced conductivity

Applied physics letters, 2010-02, Vol.96 (6)

2010

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High Bi content GaSbBi alloys

Journal of applied physics, 2014-07, Vol.116 (4)

2014

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Negative band gaps in dilute InNxSb1-x alloys

Physical review letters, 2004-04, Vol.92 (13), p.136801-136801

2004

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Transition from electron accumulation to depletion at β-Ga2O3 surfaces: The role of hydrogen and the charge neutrality level

APL materials, 2019-02, Vol.7 (2), p.022528-022528-8

2019

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High efficiency radio frequency antennas for amplifier free quantum sensing applications

Conductivity in transparent oxide semiconductors

Origin of High Mobility in Molybdenum-Doped Indium Oxide

Temperature dependence of the direct bandgap and transport properties of CdO

Realization of Vertically Aligned, Ultrahigh Aspect Ratio InAsSb Nanowires on Graphite

Intrinsic electron accumulation at clean InN surfaces

Surface band-gap narrowing in quantized electron accumulation layers

Growth of ZnSnN2 by Molecular Beam Epitaxy

Giant reduction of InN surface electron accumulation: compensation of surface donors by Mg dopants

Optical absorption by dilute GaNSb alloys: Influence of N pair states

Quantized electron accumulation states in indium nitride studied by angle-resolved photoemission spectroscopy

Surface Structure and Electronic Properties of In2O3(111) Single-Crystal Thin Films Grown on Y-Stabilized ZrO2(111)

Origin of electron accumulation at wurtzite InN surfaces

Molecular-beam epitaxy and lattice parameter of GaNxSb1−x: deviation from Vegard's law for x > 0.02

Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations

Surface electron accumulation and the charge neutrality level in In2O3

Structural, electrical and optical characterization of MOCVD grown In-rich InGaN layers

The influence of conduction band plasmons on core-level photoemission spectra of InN

Growth, disorder, and physical properties of ZnSnN2

Inversion and accumulation layers at InN surfaces

Growth and properties of GaSbBi alloys

Observation of shallow-donor muonium in Ga2O3: Evidence for hydrogen-induced conductivity

High Bi content GaSbBi alloys

Negative band gaps in dilute InNxSb1-x alloys

Transition from electron accumulation to depletion at β-Ga2O3 surfaces: The role of hydrogen and the charge neutrality level

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