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Fluorinated graphene dielectric films obtained from functionalized graphene suspension: preparation and properties

Physical chemistry chemical physics : PCCP, 2015-05, Vol.17 (2), p.13257-13266

2015

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Positive Charge in SOS Heterostructures with Interlayer Silicon Oxide

Semiconductors (Woodbury, N.Y.), 2018-10, Vol.52 (10), p.1341-1348

2018

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Microcrystalline Structure and Light-Emitting Properties of 3C–SiC Island Films Grown on the Si(100) Surface

Physics of the solid state, 2019-07, Vol.61 (7), p.1263-1271

2019

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Optical and electronic properties of the partially fluorinated graphene suspensions and films

Journal of materials science, 2017-09, Vol.52 (18), p.10993-11003

2017

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Si-based light emitters synthesized with Ge+ ion bombardment

Journal of applied physics, 2021-10, Vol.130 (15)

2021

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Fabrication of polycrystalline silicon thin films from a-SiOx via the inverted aluminum-induced layer exchange process

Materials letters, 2020-02, Vol.261, p.127086, Article 127086

2020

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Aluminum-induced crystallization of silicon suboxide thin films

Applied physics. A, Materials science & processing, 2018-09, Vol.124 (9), p.1-4, Article 646

2018

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Structural Transformations of the Dislocation Cores in Si and Their Relationship with Photoluminescence

Crystallography reports, 2021-07, Vol.66 (4), p.636-643

2021

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Applicability of gas-jet MPCVD polycrystalline diamond films on silicon with NV centers in quantum magnetometry

Journal of physics. Conference series, 2021-12, Vol.2119 (1), p.12120

2021

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Layer exchange during aluminum-induced crystallization of silicon suboxide thin films

Materials letters, 2021-06, Vol.293, p.129723, Article 129723

2021

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Fluorinated graphene suspension for inkjet printed technologies

Nanotechnology, 2016-05, Vol.27 (20), p.205601-205601

2016

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CHARACTERIZATION OF INTERFACE LAYERS OF A SOLID SOLUTION FORMED DURING THE GROWTH OF A CARBIDE LAYER ON SILICON FROM HYDROGEN CONTAINING COMPOUNDS

Journal of structural chemistry, 2021-04, Vol.62 (4), p.630-640

2021

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Extended Defects in O+-Implanted Si Layers and Their Luminescence

Crystallography reports, 2021-07, Vol.66 (4), p.625-635

2021

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Electrical characteristics of Au and Ag Schottky contacts on n-ZnO

Applied physics letters, 2003-08, Vol.83 (8), p.1575-1577

2003

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Photoluminescence associated with {113} defects in oxygen‐implanted silicon

Physica status solidi. A, Applications and materials science, 2017-07, Vol.214 (7), p.n/a

2017

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Structure and optical properties of Si and SiGe layers grown on SiO2 by chemical vapor deposition

Thin solid films, 2015-03, Vol.579, p.131-135

2015

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Defect Structure of GaAs Layers Implanted with Nitrogen Ions

Technical physics letters, 2018-09, Vol.44 (9), p.817-819

2018

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Electrical Characterization and Defect-Related Luminescence in Oxygen Implanted Silicon

Solid state phenomena, 2015-10, Vol.242, p.368-373

2015

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Proton implantation effects on electrical and recombination properties of undoped ZnO

Journal of applied physics, 2003-09, Vol.94 (5), p.2895-2900

2003

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Structural and luminescent properties of electron-irradiated silicon

AIP Conference Proceedings, 2014, Vol.1583 (1), p.93

2014

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Properties of Fe-doped, thick, freestanding GaN crystals grown by hydride vapor phase epitaxy

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2007-05, Vol.25 (3), p.686-690

2007

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Decay of oxygen solid solution in plastically deformed silicon

Physica status solidi. A, Applications and materials science, 2005-04, Vol.202 (5), p.921-925

2005

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Photoluminescence of nanostructured cubic-lattice silicon carbide films grown on a silicon wafer

Bulletin of the Russian Academy of Sciences. Physics, 2011-05, Vol.75 (5), p.695-698

2011

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Ferroelectric properties of SOS and SOI pseudo-MOSFETs with HfO2 interlayers

Solid-state electronics, 2019-09, Vol.159, p.63-70

2019

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Oxygen gettering at defects introduced by plastic deformation in silicon

Physica status solidi. C, 2007-07, Vol.4 (8), p.3070-3074

2007

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Fluorinated graphene dielectric films obtained from functionalized graphene suspension: preparation and properties

Positive Charge in SOS Heterostructures with Interlayer Silicon Oxide

Microcrystalline Structure and Light-Emitting Properties of 3C–SiC Island Films Grown on the Si(100) Surface

Optical and electronic properties of the partially fluorinated graphene suspensions and films

Si-based light emitters synthesized with Ge+ ion bombardment

Fabrication of polycrystalline silicon thin films from a-SiOx via the inverted aluminum-induced layer exchange process

Aluminum-induced crystallization of silicon suboxide thin films

Structural Transformations of the Dislocation Cores in Si and Their Relationship with Photoluminescence

Applicability of gas-jet MPCVD polycrystalline diamond films on silicon with NV centers in quantum magnetometry

Layer exchange during aluminum-induced crystallization of silicon suboxide thin films

Fluorinated graphene suspension for inkjet printed technologies

CHARACTERIZATION OF INTERFACE LAYERS OF A SOLID SOLUTION FORMED DURING THE GROWTH OF A CARBIDE LAYER ON SILICON FROM HYDROGEN CONTAINING COMPOUNDS

Extended Defects in O+-Implanted Si Layers and Their Luminescence

Electrical characteristics of Au and Ag Schottky contacts on n-ZnO

Photoluminescence associated with {113} defects in oxygen‐implanted silicon

Structure and optical properties of Si and SiGe layers grown on SiO2 by chemical vapor deposition

Defect Structure of GaAs Layers Implanted with Nitrogen Ions

Electrical Characterization and Defect-Related Luminescence in Oxygen Implanted Silicon

Proton implantation effects on electrical and recombination properties of undoped ZnO

Structural and luminescent properties of electron-irradiated silicon

Properties of Fe-doped, thick, freestanding GaN crystals grown by hydride vapor phase epitaxy

Decay of oxygen solid solution in plastically deformed silicon

Photoluminescence of nanostructured cubic-lattice silicon carbide films grown on a silicon wafer

Ferroelectric properties of SOS and SOI pseudo-MOSFETs with HfO2 interlayers

Oxygen gettering at defects introduced by plastic deformation in silicon

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