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Fabrication of Ge-ZnS multilayered optical filters for mid-infrared applications

Thin solid films, 2021-02, Vol.719, p.138488, Article 138488

2021

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L’animal et l’homme : de l’exploitation à la sauvegarde

2021

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Variable optical attenuator based on thermally tuned Mach–Zehnder interferometer within a twin core fiber

Optics communications, 2004-02, Vol.231 (1), p.213-216

2004

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Tunable Mach-Zehnder-based add-drop multiplexer

Electronics letters, 2004-10, Vol.40 (21), p.1374-1375

2004

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Epitaxial liftoff microcavities for 1.55-μm quantum-well spatial light modulators

IEEE photonics technology letters, 1999-01, Vol.11 (1), p.57-59, Article 57

1999

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1.55-μm polarization-insensitive optical amplifier with strain-balanced superlattice active layer

IEEE photonics technology letters, 1995-05, Vol.7 (5), p.473-475

1995

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Novel process for integration of optoelectronic devices using reactive ion etching without chlorinated gas

Electronics letters, 1987, Vol.23 (24), p.1253-1254

1987

Volltextzugriff (PDF)

Tunable Mach-Zehnder-based add-drop multiplexer

Electronics letters, 2004-10, Vol.40 (21), p.1-1

2004

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Pseudomorphic GaInP Schottky diode and high electron mobility transistor on InP

Applied physics letters, 1989-11, Vol.55 (20), p.2099-2101

1989

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Epitaxial overgrowth on nanometric InP wires processed by reactive ion etching

Microelectronic engineering, 1991-03, Vol.13 (1-4), p.395-398

1991

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GalnAs junction fet fully dry etched by metal organic reactive ion etching technique

Electronics letters, 1987-11, Vol.23 (24), p.1254-1255

1987

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Gold diffusion in InP

Journal of applied physics, 1987-08, Vol.62 (3), p.824-827

1987

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Pseudomorphic GaInP Schottky diode and MSM detector on InP

Electronics letters, 1990, Vol.26 (7), p.487-488

1990

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Epitaxial growth on InP substrates etched with methane reactive ion etching technique

Electronics letters, 1989-08, Vol.25 (18), p.1257-1259

1989

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Low-temperature DC characteristics of pseudomorphic Ga/sub 0.18/In/sub 0.82/P/InP/Ga/sub 0.47/In/sub 0.53/As HEMT

IEEE electron device letters, 1990-04, Vol.11 (4), p.153-155

1990

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GaInAs junction FET fully dry etched by metal organic reactive ion etching technique

Electronics letters, 1987, Vol.23 (24), p.1254

1987

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a-Si:H Schottky gate on n-GaInAs

Electronics letters, 1986-08, Vol.22 (17), p.896-898

1986

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InGaAs photoconductor failure observation

Electronics letters, 1985, Vol.21 (23), p.1101-1102

1985

Volltextzugriff (PDF)

Epitaxial liftoff microcavities for 1.55-mum quantum-well spatial light modulators

IEEE photonics technology letters, 1999-01, Vol.11 (1), p.57-59

1999

Volltextzugriff (PDF)

1.55-mu m polarization-insensitive optical amplifier withstrain-balanced superlattice active layer

IEEE photonics technology letters, 1995-05, Vol.7 (5), p.473-475

1995

Volltextzugriff (PDF)

A novel bioassay to detect Nociceptin/Orphanin FQ release from single human polymorphonuclear cells

PloS one, 2022-05, Vol.17 (5), p.e0268868-e0268868

2022

Volltextzugriff (PDF)

In vitro and in vivo effects of kisspeptin antagonists p234, p271, p354, and p356 on GPR54 activation

PloS one, 2017-06, Vol.12 (6), p.e0179156-e0179156

2017

Volltextzugriff (PDF)

Biophysical validation of serotonin 5-HT2A and 5-HT2C receptor interaction

PloS one, 2018-08, Vol.13 (8), p.e0203137-e0203137

2018

Volltextzugriff (PDF)

Low-temperature DC characteristics of pseudomorphic Ga(0.18)In(0.82)P/InP/Ga(0.47)In(0.53)As HEMT

IEEE electron device letters, 1990-04, Vol.11 (4), p.153-155

1990

Volltextzugriff (PDF)

Low-temperature DC characteristics of pseudomorphic Ga sub(0.18)In sub(0.82)P/InP/Ga sub(0.47)In sub(0.53)As HEMT

IEEE electron device letters, 1990-01, Vol.11 (4), p.153-155

1990

Volltextzugriff (PDF)

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Fabrication of Ge-ZnS multilayered optical filters for mid-infrared applications

L’animal et l’homme : de l’exploitation à la sauvegarde

Variable optical attenuator based on thermally tuned Mach–Zehnder interferometer within a twin core fiber

Tunable Mach-Zehnder-based add-drop multiplexer

Epitaxial liftoff microcavities for 1.55-μm quantum-well spatial light modulators

1.55-μm polarization-insensitive optical amplifier with strain-balanced superlattice active layer

Novel process for integration of optoelectronic devices using reactive ion etching without chlorinated gas

Tunable Mach-Zehnder-based add-drop multiplexer

Pseudomorphic GaInP Schottky diode and high electron mobility transistor on InP

Epitaxial overgrowth on nanometric InP wires processed by reactive ion etching

GalnAs junction fet fully dry etched by metal organic reactive ion etching technique

Gold diffusion in InP

Pseudomorphic GaInP Schottky diode and MSM detector on InP

Epitaxial growth on InP substrates etched with methane reactive ion etching technique

Low-temperature DC characteristics of pseudomorphic Ga/sub 0.18/In/sub 0.82/P/InP/Ga/sub 0.47/In/sub 0.53/As HEMT

GaInAs junction FET fully dry etched by metal organic reactive ion etching technique

a-Si:H Schottky gate on n-GaInAs

InGaAs photoconductor failure observation

Epitaxial liftoff microcavities for 1.55-mum quantum-well spatial light modulators

1.55-mu m polarization-insensitive optical amplifier withstrain-balanced superlattice active layer

A novel bioassay to detect Nociceptin/Orphanin FQ release from single human polymorphonuclear cells

In vitro and in vivo effects of kisspeptin antagonists p234, p271, p354, and p356 on GPR54 activation

Biophysical validation of serotonin 5-HT2A and 5-HT2C receptor interaction

Low-temperature DC characteristics of pseudomorphic Ga(0.18)In(0.82)P/InP/Ga(0.47)In(0.53)As HEMT

Low-temperature DC characteristics of pseudomorphic Ga sub(0.18)In sub(0.82)P/InP/Ga sub(0.47)In sub(0.53)As HEMT

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