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Recent Developments and Prospects of Fully Recessed MIS Gate Structures for GaN on Si Power Transistors

Energies (Basel), 2023-04, Vol.16 (7), p.2978

2023

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Synthesis of AlOxNy thin films using a two-step PE-ALD process

AIP advances, 2023-08, Vol.13 (8), p.085128-085128-8

2023

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Effect of plasma process on n-GaN surface probed with electrochemical short loop

Power electronic devices and components, 2023-10, Vol.6, p.100041, Article 100041

2023

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Impact of Nitrogen Concentration and Post‐Deposition Annealing on Electrical Properties of AlON/Etched N‐GaN MOS Capacitors

Advanced electronic materials, 2024-03, Vol.10 (3), p.n/a

2024

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Luminescent coupling effect in wafer-bonded III-V on silicon multijunction solar cells

Journal of photonics for energy, 2019-03, Vol.9 (1), p.1

2019

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H3PO4-based wet chemical etching for recovery of dry-etched GaN surfaces

Applied surface science, 2022-04, Vol.582, p.152309, Article 152309

2022

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Effect of Al 2 O 3 thickness and oxidant precursors on the interface composition and contamination in Al 2 O 3 /GaN structures

Surface and interface analysis, 2024-07, Vol.56 (7), p.399-407

2024

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Wafer bonding approaches for III-V on Si multi-junction solar cells

2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), 2017, p.2492-2497

2017

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H$_3$PO$_4$-based wet chemical etching for recovery of dry-etched GaN surfaces

Applied surface science, 2021-12, Vol.582

2021

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Electrons irradiation of III-V//Si solar cells for NIRT conditions

Solar energy materials and solar cells, 2021-05, Vol.223, p.110975, Article 110975

2021

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Effect of Al2O3 thickness and oxidant precursors on the interface composition and contamination in Al2O3/GaN structures

Surface and interface analysis, 2024-07, Vol.56 (7), p.399-407

2024

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Characterization of GaN structures for power electronics by secondary ion mass spectrometry and atomic force microscope approach

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2023-05, Vol.41 (3)

2023

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Impact of etching process on Al2O3/GaN interface for MOSc-HEMT devices combining ToF-SIMS, HAXPES and AFM

Solid-state electronics, 2023-10, Vol.208, p.108743, Article 108743

2023

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8.2% pure selenide kesterite thin-film solar cells from large-area electrodeposited precursors

Progress in photovoltaics, 2016-01, Vol.24 (1), p.38-51

2016

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Post-deposition annealing challenges for ALD Al$_{0.5}$Si$_{0.5}$O$_x$/n-GaN MOS devices

Solid-state electronics, 2023, Vol.209

2023

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Cradle-to-Gate Life Cycle Assessment (LCA) of GaN Power Semiconductor Device

Global sustainability, 2024-01, Vol.16 (2), p.901

2024

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Study of an Al2O3/GaN Interface for Normally Off MOS-Channel High-Electron-Mobility Transistors Using XPS Characterization: The Impact of Wet Surface Treatment on Threshold Voltage V TH

ACS applied electronic materials, 2021-03, Vol.3 (3), p.1170-1177

2021

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Impact of Gate Morphology on Electrical Performances of Recessed GaN-on Si MOS channel-HEMT for Different Channel Orientations

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023, p.382-385

2023

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Characterization of dual‐junction III‐V on Si tandem solar cells with 23.7% efficiency under low concentration

Progress in photovoltaics, 2019-07, Vol.27 (7), p.652-661

2019

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Understanding and monitoring the capacitance‐voltage technique for the characterization of tandem solar cells

Progress in photovoltaics, 2020-06, Vol.28 (6), p.601-608

2020

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Impact of Substrate Biasing During AlN Growth by PEALD on Al2O3/AlN/GaN MOS Capacitors

Advanced materials interfaces, 2022-02, Vol.9 (5), p.n/a

2022

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Rapid thermal processing annealing challenges for large scale Cu2ZnSnS4 thin films

Physica status solidi. A, Applications and materials science, 2015-01, Vol.212 (1), p.103-108

2015

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In-Situ Measurement of the Effect of 1-MeV Electrons Irradiation on III-V//Si at LILT Conditions

2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC), 2020, p.1-6

2020

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Study of an Al 2 O 3 /GaN Interface for Normally Off MOS-Channel High-Electron-Mobility Transistors Using XPS Characterization: The Impact of Wet Surface Treatment on Threshold Voltage V TH

ACS applied electronic materials, 2021-03, Vol.3 (3), p.1170-1177

2021

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Impact of Substrate Biasing During AlN Growth by PEALD on Al 2 O 3 /AlN/GaN MOS Capacitors

Advanced materials interfaces, 2022-02, Vol.9 (5)

2022

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Recent Developments and Prospects of Fully Recessed MIS Gate Structures for GaN on Si Power Transistors

Synthesis of AlOxNy thin films using a two-step PE-ALD process

Effect of plasma process on n-GaN surface probed with electrochemical short loop

Impact of Nitrogen Concentration and Post‐Deposition Annealing on Electrical Properties of AlON/Etched N‐GaN MOS Capacitors

Luminescent coupling effect in wafer-bonded III-V on silicon multijunction solar cells

H3PO4-based wet chemical etching for recovery of dry-etched GaN surfaces

Effect of Al 2 O 3 thickness and oxidant precursors on the interface composition and contamination in Al 2 O 3 /GaN structures

Wafer bonding approaches for III-V on Si multi-junction solar cells

H$_3$PO$_4$-based wet chemical etching for recovery of dry-etched GaN surfaces

Electrons irradiation of III-V//Si solar cells for NIRT conditions

Effect of Al2O3 thickness and oxidant precursors on the interface composition and contamination in Al2O3/GaN structures

Characterization of GaN structures for power electronics by secondary ion mass spectrometry and atomic force microscope approach

Impact of etching process on Al2O3/GaN interface for MOSc-HEMT devices combining ToF-SIMS, HAXPES and AFM

8.2% pure selenide kesterite thin-film solar cells from large-area electrodeposited precursors

Post-deposition annealing challenges for ALD Al$_{0.5}$Si$_{0.5}$O$_x$/n-GaN MOS devices

Cradle-to-Gate Life Cycle Assessment (LCA) of GaN Power Semiconductor Device

Study of an Al2O3/GaN Interface for Normally Off MOS-Channel High-Electron-Mobility Transistors Using XPS Characterization: The Impact of Wet Surface Treatment on Threshold Voltage V TH

Impact of Gate Morphology on Electrical Performances of Recessed GaN-on Si MOS channel-HEMT for Different Channel Orientations

Characterization of dual‐junction III‐V on Si tandem solar cells with 23.7% efficiency under low concentration

Understanding and monitoring the capacitance‐voltage technique for the characterization of tandem solar cells

Impact of Substrate Biasing During AlN Growth by PEALD on Al2O3/AlN/GaN MOS Capacitors

Rapid thermal processing annealing challenges for large scale Cu2ZnSnS4 thin films

In-Situ Measurement of the Effect of 1-MeV Electrons Irradiation on III-V//Si at LILT Conditions

Study of an Al 2 O 3 /GaN Interface for Normally Off MOS-Channel High-Electron-Mobility Transistors Using XPS Characterization: The Impact of Wet Surface Treatment on Threshold Voltage V TH

Impact of Substrate Biasing During AlN Growth by PEALD on Al 2 O 3 /AlN/GaN MOS Capacitors

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