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Compression of Hydrogen Gas for Energy Storage: A Review

Latvian Journal of Physics and Technical Sciences, 2023-04, Vol.60 (2), p.4-16

2023

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Numerical Modelling of a Turbine Flow Meter Used as Part of the Hydrogen Compressor System

Latvian Journal of Physics and Technical Sciences, 2023-12, Vol.60 (6), p.113-126

2023

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Two-dimensional analytic modeling of very thin SOI MOSFETs

IEEE transactions on electron devices, 1990-09, Vol.37 (9), p.1999-2006

1990

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A High Performance Submicrometer CMOS/SOI Technology Using Ultrathin Silicon Films on Simox

MRS proceedings, 1987, Vol.107, Article 349

1987

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CMOS device and interconnect technology enhancements for low power/low voltage applications

Solid-state electronics, 1996-04, Vol.39 (4), p.481-488

Vasudev, P.K.

1996

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Solid Phase Epitaxial Recrystallization of Sos, with Applications to Submicrometer Cmos and Bipolar Devices

MRS proceedings, 1985, Vol.53, Article 121

Vasudev, P.K.

1985

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Interfacial microstructure and reaction at the spin-coated fluorinated polyimide/Al interface : surface-enhanced X-ray diffraction and TEM studies

Applied physics. A, Materials science & processing, 1997-09, Vol.65 (3), p.287-290

1997

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Strip-plot design for two-step processes

Quality and reliability engineering international, 1998-07, Vol.14 (4), p.197-210

1998

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A novel sub-half micron Al-Cu via plug interconnect using low dielectric constant material as inter-level dielectric

IEEE electron device letters, 1997-02, Vol.18 (2), p.57-59

1997

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Silicon-on-insulator material qualification for low-power complementary metal-oxide semiconductor application

Thin solid films, 1995-12, Vol.270 (1), p.578-583

1995

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Low temperature and low cost planarised aluminium interconnect for sub-half micrometre VLSI circuits

Electronics letters, 1997-01, Vol.33 (3), p.247

1997

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Advanced materials for low power electronics

Solid-state electronics, 1996-04, Vol.39 (4), p.489-497

1996

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Electroless copper deposition solution induced chemical changes in low- k fluorinated dielectrics

Materials science in semiconductor processing, 1999-04, Vol.2 (1), p.19-22

1999

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Si-ULSI with a scaled down future

IEEE circuits and devices magazine, 1998-03, Vol.14 (2), p.19-29

1998

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Characterization of CMOS Devices in 0.5-μm Silicon-On-Sapphire Films Modified by Solid Phase Epitaxy and Regrowth (Spear)

MRS proceedings, 1984, Vol.33, Article 35

1984

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The early breakdown characteristics of thin gate oxide on SOI wafers

1997 IEEE International SOI Conference Proceedings, 1997, p.52-53

1997

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IIB-6 recent advances in the rapid thermal annealing of boron and BF 2 + implanted source-drain junctions for submicrometer CMOS technology

IEEE transactions on electron devices, 1984-12, Vol.31 (12), p.1966-1966

1984

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Substrate current measurements in thin SOI MOSFET's at 300 and 77 K

IEEE transactions on electron devices, 1991-12, Vol.38 (12), p.2684-2686

1991

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Quality of SOI film after surface smoothing with hydrogen annealing, touch-polishing

1997 IEEE International SOI Conference Proceedings, 1997, p.130-131

1997

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Recent advances in device processing and packaging of high-power pulsed GaAs double-drift IMPATT's at X-band

IEEE transactions on electron devices, 1984-08, Vol.31 (8), p.1044-1050

Vasudev, P.K.

1984

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Low dose SIMOX and impact of ITOX process on quality of SOI film

1997 IEEE International SOI Conference Proceedings, 1997, p.18-19

1997

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Identification and reduction of impurities in SOI wafers using secondary ion mass spectrometry and implantation-induced gettering

Proceedings. SOS/SOI Technology Workshop, 1988, p.50

1988

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High-Quality Boron and BF 2 + -Implanted P + Junctions in Si Using Solid Phase Epitaxy and Transient Annealing

MRS proceedings, 1984, Vol.35, Article 367

1984

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High-Quality Boron and BF2 +-Implanted P+ Junctions in Si Using Solid Phase Epitaxy and Transient Annealing

MRS proceedings, 1984, Vol.35

1984

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A short-channel CMOS/SOS technology in recrystallized 0.3-µm-thick silicon-on-sapphire films

IEEE electron device letters, 1984-05, Vol.5 (5), p.156-158

1984

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Compression of Hydrogen Gas for Energy Storage: A Review

Numerical Modelling of a Turbine Flow Meter Used as Part of the Hydrogen Compressor System

Two-dimensional analytic modeling of very thin SOI MOSFETs

A High Performance Submicrometer CMOS/SOI Technology Using Ultrathin Silicon Films on Simox

CMOS device and interconnect technology enhancements for low power/low voltage applications

Solid Phase Epitaxial Recrystallization of Sos, with Applications to Submicrometer Cmos and Bipolar Devices

Interfacial microstructure and reaction at the spin-coated fluorinated polyimide/Al interface : surface-enhanced X-ray diffraction and TEM studies

Strip-plot design for two-step processes

A novel sub-half micron Al-Cu via plug interconnect using low dielectric constant material as inter-level dielectric

Silicon-on-insulator material qualification for low-power complementary metal-oxide semiconductor application

Low temperature and low cost planarised aluminium interconnect for sub-half micrometre VLSI circuits

Advanced materials for low power electronics

Electroless copper deposition solution induced chemical changes in low- k fluorinated dielectrics

Si-ULSI with a scaled down future

Characterization of CMOS Devices in 0.5-μm Silicon-On-Sapphire Films Modified by Solid Phase Epitaxy and Regrowth (Spear)

The early breakdown characteristics of thin gate oxide on SOI wafers

IIB-6 recent advances in the rapid thermal annealing of boron and BF 2 + implanted source-drain junctions for submicrometer CMOS technology

Substrate current measurements in thin SOI MOSFET's at 300 and 77 K

Quality of SOI film after surface smoothing with hydrogen annealing, touch-polishing

Recent advances in device processing and packaging of high-power pulsed GaAs double-drift IMPATT's at X-band

Low dose SIMOX and impact of ITOX process on quality of SOI film

Identification and reduction of impurities in SOI wafers using secondary ion mass spectrometry and implantation-induced gettering

High-Quality Boron and BF 2 + -Implanted P + Junctions in Si Using Solid Phase Epitaxy and Transient Annealing

High-Quality Boron and BF2 +-Implanted P+ Junctions in Si Using Solid Phase Epitaxy and Transient Annealing

A short-channel CMOS/SOS technology in recrystallized 0.3-µm-thick silicon-on-sapphire films

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