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Tamm plasmon polaritons: Slow and spatially compact light

Applied physics letters, 2008-06, Vol.92 (25), p.251112-251112-3

2008

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Design optimization for bright electrically-driven quantum dot single-photon sources emitting in telecom O-band

Optics express, 2021-03, Vol.29 (5), p.6582-6598

2021

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AlGaAs/GaAs HBTs with C-doped base and undoped emitter-base spacer layer

Journal of physics. Conference series, 2017-11, Vol.917 (8), p.82016

2017

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Technologies for Safing the Semipalatinsk Test Site

Atomic energy (New York, N.Y.), 2020-12, Vol.129 (2), p.108-111

2020

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The Design of an Electrically-Driven Single Photon Source of the 1.3-μm Spectral Range Based on a Vertical Microcavity with Intracavity Contacts

Technical physics letters, 2021-03, Vol.47 (3), p.222-226

2021

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Heterobarrier Varactors with Nonuniformly Doped Modulation Layers

Technical physics letters, 2019-10, Vol.45 (10), p.1063-1066

2019

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Epitaxial InGaAs/InAlAs/AlAs Structures for Heterobarrier Varactors with Low Leakage Current

Technical physics letters, 2018-10, Vol.44 (10), p.862-864

2018

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Characteristics of a fine vertical wind-field structure in the stratosphere and lower thermosphere according to infrasonic signals in the zone of acoustic shadow

Izvestiya. Atmospheric and oceanic physics, 2015, Vol.51 (1), p.57-74

2015

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InAs/InGaAs/GaAs quantum dot lasers of 1.3 mu m range with high (88%) differential efficiency

Electronics letters, 2002-09, Vol.38 (19), p.1104-1106

2002

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Simulation and Analysis of the Optical Characteristics of Cylindrical Micropillars with InAs/GaAs Quantum Dots

JETP letters, 2022-11, Vol.116 (9), p.613-618

2022

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Resonant optical reflection by a periodic system of the quantum well excitons at the second quantum state

Applied physics letters, 2011-02, Vol.98 (7), p.073112-073112-3

2011

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Impurity-assisted terahertz photoluminescence in quantum wells under conditions of interband stimulated emission

Journal of physics. Conference series, 2018-03, Vol.993 (1), p.12017

2018

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Vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal current aperture for compact atomic clocks

Quantum electronics (Woodbury, N.Y.), 2019-02, Vol.49 (2), p.187-180

2019

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Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-[mu]m Optical Range Based on Quantum Dots Grown on GaAs Substrates

Semiconductors (Woodbury, N.Y.), 2018-10, Vol.52 (10), p.1311

2018

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Terahertz radiation associated with the impurity electron transition in quantum wells upon optical and electrical pumping

Semiconductors (Woodbury, N.Y.), 2015-01, Vol.49 (1), p.28-32

2015

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The Effect of a Saturable Absorber in Long-Wavelength Vertical-Cavity Surface-Emitting Lasers Fabricated by Wafer Fusion Technology

Technical physics letters, 2020-12, Vol.46 (12), p.1257-1262

2020

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Effect of a terahertz cavity on the conductivity of short-period GaAs/AlAs superlattices

JETP letters, 2016, Vol.103 (2), p.122-124

2016

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Simulation of Internal Gravity Wave Propagation Due to Sudden Stratospheric Warming

Russian journal of physical chemistry. B, 2017-11, Vol.11 (6), p.1028-1032

2017

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InAlAs/InGaAs/InP High-Electron-Mobility Transistors with a Composite Channel and Higher Breakdown Characteristics

Technical physics letters, 2019-11, Vol.45 (11), p.1092-1096

2019

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Ionospheric Effects of the Sudden Stratospheric Warming in 2009: Results of Simulation with the First Version of the EAGLE Model

Russian journal of physical chemistry. B, 2018-07, Vol.12 (4), p.760-770

2018

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Ultrahigh gain and non-radiative recombination channels in 1.5 μm range metamorphic InAs-InGaAs quantum dot lasers on GaAs substrates

Semiconductor science and technology, 2005, Vol.20 (1), p.33-37

2005

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Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture

Semiconductors (Woodbury, N.Y.), 2016-10, Vol.50 (10), p.1390-1395

2016

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Deep-level transient spectroscopy of InAs/GaAs quantum dot superlattices

AIP Conference Proceedings, 2014, Vol.1583 (1), p.251

2014

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Optical Properties of AlGaAs/GaAs Resonant Bragg Structure at the Second Quantum State

Semiconductors (Woodbury, N.Y.), 2018-04, Vol.52 (4), p.447-451

2018

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Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors

Semiconductors (Woodbury, N.Y.), 2017-11, Vol.51 (11), p.1431-1434

2017

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Tamm plasmon polaritons: Slow and spatially compact light

Design optimization for bright electrically-driven quantum dot single-photon sources emitting in telecom O-band

AlGaAs/GaAs HBTs with C-doped base and undoped emitter-base spacer layer

Technologies for Safing the Semipalatinsk Test Site

The Design of an Electrically-Driven Single Photon Source of the 1.3-μm Spectral Range Based on a Vertical Microcavity with Intracavity Contacts

Heterobarrier Varactors with Nonuniformly Doped Modulation Layers

Epitaxial InGaAs/InAlAs/AlAs Structures for Heterobarrier Varactors with Low Leakage Current

Characteristics of a fine vertical wind-field structure in the stratosphere and lower thermosphere according to infrasonic signals in the zone of acoustic shadow

InAs/InGaAs/GaAs quantum dot lasers of 1.3 mu m range with high (88%) differential efficiency

Simulation and Analysis of the Optical Characteristics of Cylindrical Micropillars with InAs/GaAs Quantum Dots

Resonant optical reflection by a periodic system of the quantum well excitons at the second quantum state

Impurity-assisted terahertz photoluminescence in quantum wells under conditions of interband stimulated emission

Vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal current aperture for compact atomic clocks

Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-[mu]m Optical Range Based on Quantum Dots Grown on GaAs Substrates

Terahertz radiation associated with the impurity electron transition in quantum wells upon optical and electrical pumping

The Effect of a Saturable Absorber in Long-Wavelength Vertical-Cavity Surface-Emitting Lasers Fabricated by Wafer Fusion Technology

Effect of a terahertz cavity on the conductivity of short-period GaAs/AlAs superlattices

Simulation of Internal Gravity Wave Propagation Due to Sudden Stratospheric Warming

InAlAs/InGaAs/InP High-Electron-Mobility Transistors with a Composite Channel and Higher Breakdown Characteristics

Ionospheric Effects of the Sudden Stratospheric Warming in 2009: Results of Simulation with the First Version of the EAGLE Model

Ultrahigh gain and non-radiative recombination channels in 1.5 μm range metamorphic InAs-InGaAs quantum dot lasers on GaAs substrates

Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture

Deep-level transient spectroscopy of InAs/GaAs quantum dot superlattices

Optical Properties of AlGaAs/GaAs Resonant Bragg Structure at the Second Quantum State

Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors

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