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Reasons of Crystallite Formation during the Self-Catalyzed GaAs Nanowire Growth

Semiconductors (Woodbury, N.Y.), 2020-12, Vol.54 (14), p.1850-1853

2020

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Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy

Semiconductors (Woodbury, N.Y.), 2021-02, Vol.55 (2), p.194-201

2021

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Impact of LT-GaAs layers on crystalline properties of the epitaxial GaAs films grown by MBE on Si substrates

Journal of physics. Conference series, 2016-08, Vol.741 (1), p.12020

2016

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Some geometrical aspects of diffracted waves formation on a reconstructed crystal face at RHEED

Surface science, 2018-11, Vol.677, p.306-315

2018

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Kinetics of (2 × 4) → (3 × 1(6)) structural changes on GaAs(001) surfaces during the UHV annealing

Surface science, 2018-06, Vol.672-673, p.23-32

2018

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Effect of the Crystallographic Orientation of GaSb Films on Their Structural Properties during MBE Heteroepitaxy on Vicinal Si(001) Substrates

Semiconductors (Woodbury, N.Y.), 2020-12, Vol.54 (12), p.1548-1554

2020

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Kinetics of Structural Changes on GaSb(001) Singular and Vicinal Surfaces During the UHV Annealing

Semiconductors (Woodbury, N.Y.), 2018-05, Vol.52 (5), p.664-666

2018

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A Mask Based on a Si Epitaxial Layer for the Self-Catalytic Nanowire Growth on GaAs(111)B and GaAs(100) Substrates

Technical physics letters, 2020-02, Vol.46 (2), p.161-164

2020

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A Lightweight Flexible Solar Cell Based on a Heteroepitaxial InGaP/GaAs Structure

Technical physics, 2019-07, Vol.64 (7), p.1010-1016

2019

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Zinc Diffusion into InP via a Narrow Gap from a Planar Zn3P2-Based Source

Technical physics letters, 2018-07, Vol.44 (7), p.612-614

2018

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Ellipsometric detection of GaAs(0 0 1) surface hydrogenation in H2 atmosphere

Surface science, 2008-06, Vol.602 (11), p.1933-1937

Vasev, A.V.

2008

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InAsSb on GaAs (001): influence of the arsenic molecules form on composition and crystalline properties of MBE layers

Journal of physics. Conference series, 2015-11, Vol.643 (1), p.12006

2015

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Ellipsometric detection of transitional surface structures on decapped GaAs

Surface science, 2005-08, Vol.588 (1), p.149-159

2005

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DIAGNOSTIKA I LEChENIE OSTEOPOROZA U PATsIENTOV STARShIKh VOZRASTNYKh GRUPP POSLE NIZKOTRAVMATIChNOGO PERELOMA LUChEVOY KOSTI

Osteoporoz i osteopatii, 2016-08, Vol.19 (2), p.22-22

2016

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Ellipsometric detection of GaAs(0 0 1) surface hydrogenation in H 2 atmosphere

Surface science, 2008-06, Vol.602 (11), p.1933-1937

Vasev, A.V.

2008

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Erratum: “Some geometrical aspects of diffracted waves formation on a reconstructed crystal face at RHEED” surface science 677 (2018) 306–315

Surface science, 2019-11, Vol.689, p.121403, Article 121403

2019

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Ellipsometric detection of GaAs(001) surface hydrogenation in H2 atmosphere

Surface science, 2008, Vol.602 (11), p.1933-1937

VASEV, A. V

2008

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The Growth of InAsxSb1 –x Solid Solutions on Misoriented GaAs(001) Substrates by Molecular-Beam Epitaxy

Semiconductors (Woodbury, N.Y.), 2019-04, Vol.53 (4), p.503-510

2019

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The Growth of InAs{sub x}Sb{sub 1 –x} Solid Solutions on Misoriented GaAs(001) Substrates by Molecular-Beam Epitaxy

Semiconductors (Woodbury, N.Y.), 2019-04, Vol.53 (4)

2019

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The Growth of InAs x Sb1 – x Solid Solutions on Misoriented GaAs(001) Substrates by Molecular-Beam Epitaxy

Semiconductors (Woodbury, N.Y.), 2019-01, Vol.53 (4), p.503-510

2019

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Molecular Beam Epitaxy of InAsSb Solid Solution: Effect of Growth Rate on Composition of Epitaxial Layers

Optoelectronics, instrumentation, and data processing, 2020-09, Vol.56 (5), p.498-502

2020

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Zinc Diffusion into InP via a Narrow Gap from a Planar Zn{sub 3}P{sub 2}-Based Source

Technical physics letters, 2018-07, Vol.44 (7)

2018

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Ellipsometric Detection of Transitional Surface Structures on Decapped GaAs(001)

Key engineering materials, 2005-01, Vol.295-296, p.45-50

2005

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Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers

Optoelectronics, instrumentation, and data processing, 2018-03, Vol.54 (2), p.181-186

2018

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GaP-=SUB=-x-=/SUB=-As-=SUB=-1-x-=/SUB=- solid solution growth by molecular beam epitaxy: phenomenological description of the x dependence from growth conditions on GaAs(001) substrate

Semiconductors, 2023, Vol.57 (2), p.71

2023

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Reasons of Crystallite Formation during the Self-Catalyzed GaAs Nanowire Growth

Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy

Impact of LT-GaAs layers on crystalline properties of the epitaxial GaAs films grown by MBE on Si substrates

Some geometrical aspects of diffracted waves formation on a reconstructed crystal face at RHEED

Kinetics of (2 × 4) → (3 × 1(6)) structural changes on GaAs(001) surfaces during the UHV annealing

Effect of the Crystallographic Orientation of GaSb Films on Their Structural Properties during MBE Heteroepitaxy on Vicinal Si(001) Substrates

Kinetics of Structural Changes on GaSb(001) Singular and Vicinal Surfaces During the UHV Annealing

A Mask Based on a Si Epitaxial Layer for the Self-Catalytic Nanowire Growth on GaAs(111)B and GaAs(100) Substrates

A Lightweight Flexible Solar Cell Based on a Heteroepitaxial InGaP/GaAs Structure

Zinc Diffusion into InP via a Narrow Gap from a Planar Zn3P2-Based Source

Ellipsometric detection of GaAs(0 0 1) surface hydrogenation in H2 atmosphere

InAsSb on GaAs (001): influence of the arsenic molecules form on composition and crystalline properties of MBE layers

Ellipsometric detection of transitional surface structures on decapped GaAs

DIAGNOSTIKA I LEChENIE OSTEOPOROZA U PATsIENTOV STARShIKh VOZRASTNYKh GRUPP POSLE NIZKOTRAVMATIChNOGO PERELOMA LUChEVOY KOSTI

Ellipsometric detection of GaAs(0 0 1) surface hydrogenation in H 2 atmosphere

Erratum: “Some geometrical aspects of diffracted waves formation on a reconstructed crystal face at RHEED” surface science 677 (2018) 306–315

Ellipsometric detection of GaAs(001) surface hydrogenation in H2 atmosphere

The Growth of InAsxSb1 –x Solid Solutions on Misoriented GaAs(001) Substrates by Molecular-Beam Epitaxy

The Growth of InAs{sub x}Sb{sub 1 –x} Solid Solutions on Misoriented GaAs(001) Substrates by Molecular-Beam Epitaxy

The Growth of InAs x Sb1 – x Solid Solutions on Misoriented GaAs(001) Substrates by Molecular-Beam Epitaxy

Molecular Beam Epitaxy of InAsSb Solid Solution: Effect of Growth Rate on Composition of Epitaxial Layers

Zinc Diffusion into InP via a Narrow Gap from a Planar Zn{sub 3}P{sub 2}-Based Source

Ellipsometric Detection of Transitional Surface Structures on Decapped GaAs(001)

Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers

GaP-=SUB=-x-=/SUB=-As-=SUB=-1-x-=/SUB=- solid solution growth by molecular beam epitaxy: phenomenological description of the x dependence from growth conditions on GaAs(001) substrate

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