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Ballistic nanodevices for terahertz data processing: Monte Carlo simulations

Nanotechnology, 2003-02, Vol.14 (2), p.117-122

2003

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Operation and high-frequency performance of nanoscale unipolar rectifying diodes

Applied physics letters, 2005-05, Vol.86 (21), p.212103-212103-3

2005

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Analysis of Surface Charge Effects and Edge Fringing Capacitance in Planar GaAs and GaN Schottky Barrier Diodes

IEEE transactions on electron devices, 2020-09, Vol.67 (9), p.3530-3535

2020

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Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band

IEEE transactions on electron devices, 2024-08, Vol.71 (8), p.4524-4529

2024

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Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples

Journal of applied physics, 2022-07, Vol.132 (4)

2022

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Monte Carlo study of the operation of GaN planar nanodiodes as sub-THz emitters in resonant circuits

Semiconductor science and technology, 2014-11, Vol.29 (11), p.115032

2014

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Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes

IEEE transactions on electron devices, 2021-09, Vol.68 (9), p.4296-4301

2021

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On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes

IEEE transactions on electron devices, 2023-07, Vol.70 (7), p.1-0

2023

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Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes

Journal of applied physics, 2024-01, Vol.135 (1)

2024

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Microscopic modeling of nonlinear transport in ballistic nanodevices

IEEE transactions on electron devices, 2003-09, Vol.50 (9), p.1897-1905

2003

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Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysis

Journal of applied physics, 2018-01, Vol.123 (3)

2018

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Room temperature nonlinear transport in ballistic nanodevices

Semiconductor science and technology, 2004-04, Vol.19 (4), p.S125-S127

2004

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Influence of the kink effect on the dynamic performance of short-channel InAlAs/InGaAs high electron mobility transistors

Semiconductor science and technology, 2005-09, Vol.20 (9), p.956-960, Article 956

2005

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Monte Carlo modelling of noise in advanced III–V HEMTs

Journal of computational electronics, 2015-03, Vol.14 (1), p.72-86

2015

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Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETs

Journal of physics. Conference series, 2015-10, Vol.647 (1), p.12056

2015

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Monte Carlo analysis of four-terminal ballistic rectifiers

Nanotechnology, 2004-04, Vol.15 (4), p.S250-S253

2004

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Kink effect and noise performance in isolated-gate InAs AlSb high electron mobility transistors

Semiconductor science and technology, 2012-06, Vol.27 (6), p.65018

2012

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Improvement of interfacial and electrical properties of Al2O3 n-Ga0.47In0.53As for III-V impact ionization MOSFETs

Journal of physics. Conference series, 2015, Vol.647 (1)

2015

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Modeling of High-Frequency Noise in III-V Double-Gate HFETs

Noise and Fluctuations (AIP Conference Proceedings Volume 1129), 2009, Vol.1129, p.299-304

Vasallo, B G

2009

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Influence of trapping–detrapping processes on shot noise in nondegenerate quasi-ballistic transport

Semiconductor science and technology, 2002-05, Vol.17 (5), p.440-445

2002

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Nonlinear effects in T-branch junctions

IEEE electron device letters, 2004-05, Vol.25 (5), p.235-237

2004

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Ballistic nano-devices for high frequency applications

Thin solid films, 2007-03, Vol.515 (10), p.4321-4326

2007

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Kink-effect related noise in short-channel InAlAs/InGaAs high electron mobility transistors

Journal of applied physics, 2004-06, Vol.95 (12), p.8271-8274

2004

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Monte Carlo study of kink effect in short-channel InAlAs/InGaAs high electron mobility transistors

Journal of applied physics, 2003-09, Vol.94 (6), p.4096-4101

2003

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Comparison Between the Dynamic Performance of Double- and Single-Gate AlInAs/InGaAs HEMTs

IEEE transactions on electron devices, 2007-11, Vol.54 (11), p.2815-2822

2007

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Ballistic nanodevices for terahertz data processing: Monte Carlo simulations

Operation and high-frequency performance of nanoscale unipolar rectifying diodes

Analysis of Surface Charge Effects and Edge Fringing Capacitance in Planar GaAs and GaN Schottky Barrier Diodes

Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band

Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples

Monte Carlo study of the operation of GaN planar nanodiodes as sub-THz emitters in resonant circuits

Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes

On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes

Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes

Microscopic modeling of nonlinear transport in ballistic nanodevices

Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysis

Room temperature nonlinear transport in ballistic nanodevices

Influence of the kink effect on the dynamic performance of short-channel InAlAs/InGaAs high electron mobility transistors

Monte Carlo modelling of noise in advanced III–V HEMTs

Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETs

Monte Carlo analysis of four-terminal ballistic rectifiers

Kink effect and noise performance in isolated-gate InAs AlSb high electron mobility transistors

Improvement of interfacial and electrical properties of Al2O3 n-Ga0.47In0.53As for III-V impact ionization MOSFETs

Modeling of High-Frequency Noise in III-V Double-Gate HFETs

Influence of trapping–detrapping processes on shot noise in nondegenerate quasi-ballistic transport

Nonlinear effects in T-branch junctions

Ballistic nano-devices for high frequency applications

Kink-effect related noise in short-channel InAlAs/InGaAs high electron mobility transistors

Monte Carlo study of kink effect in short-channel InAlAs/InGaAs high electron mobility transistors

Comparison Between the Dynamic Performance of Double- and Single-Gate AlInAs/InGaAs HEMTs

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