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Iron and intrinsic deep level states in Ga2O3

Applied physics letters, 2018-01, Vol.112 (4)

2018

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Quantum computing with defects

Proceedings of the National Academy of Sciences - PNAS, 2010-05, Vol.107 (19), p.8513-8518

2010

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Electrical properties of point defects in CdS and ZnS

Applied physics letters, 2013-09, Vol.103 (10)

2013

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Tunneling and Polaron Charge Transport through Li2O2 in Li–O2 Batteries

The journal of physical chemistry letters, 2013-10, Vol.4 (20), p.3494-3499

2013

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Combining steady-state photo-capacitance spectra with first-principles calculations: the case of Fe and Ti in β-Ga2O3

New journal of physics, 2020-06, Vol.22 (6), p.063033

2020

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Dual behavior of excess electrons in rutile TiO2

Physica status solidi. PSS-RRL. Rapid research letters, 2013-03, Vol.7 (3), p.199-203

2013

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Self-trapped hole and impurity-related broad luminescence in β-Ga2O3

Journal of applied physics, 2020-02, Vol.127 (7)

2020

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Optical absorption of Fe in doped Ga2O3

Journal of applied physics, 2019-10, Vol.126 (16)

2019

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Role of self-trapping in luminescence and p -type conductivity of wide-band-gap oxides

Physical review. B, Condensed matter and materials physics, 2012-02, Vol.85 (8), Article 081109

2012

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Hydrogenated cation vacancies in semiconducting oxides

Journal of physics. Condensed matter, 2011-08, Vol.23 (33), p.334212-9

2011

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First-principles characterization of native-defect-related optical transitions in ZnO

Journal of applied physics, 2017-07, Vol.122 (3)

2017

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Mechanism of Visible-Light Photocatalysis in Nitrogen-Doped TiO2

Advanced materials (Weinheim), 2011-05, Vol.23 (20), p.2343-2347

2011

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Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3

APL materials, 2019-02, Vol.7 (2), p.022510-022510-10

2019

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Intermixing at the absorber-buffer layer interface in thin-film solar cells: The electronic effects of point defects in Cu(In,Ga)(Se,S)2 and Cu2ZnSn(Se,S)4 devices

Journal of applied physics, 2014-08, Vol.116 (6)

2014

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Mechanistic insights into nitrogen fixation by nitrogenase enzymes

Physical chemistry chemical physics : PCCP, 2015-01, Vol.17 (44), p.29541-29547

2015

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Ambipolar doping in SnO

Applied physics letters, 2013-08, Vol.103 (8)

2013

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Deep level study of chlorine-based dry etched β − Ga2O3

Journal of applied physics, 2021-07, Vol.130 (2)

2021

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First principles calculations of point defect diffusion in CdS buffer layers: Implications for Cu(In,Ga)(Se,S)2 and Cu2ZnSn(Se,S)4-based thin-film photovoltaics

Journal of applied physics, 2016-01, Vol.119 (2)

2016

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Transition from electron accumulation to depletion at β-Ga2O3 surfaces: The role of hydrogen and the charge neutrality level

APL materials, 2019-02, Vol.7 (2), p.022528-022528-8

2019

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Ni–Fe–S Cubanes in CO2 Reduction Electrocatalysis: A DFT Study

ACS catalysis, 2013-11, Vol.3 (11), p.2640-2643

2013

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Defects in AlN as candidates for solid-state qubits

Physical review. B, 2016-04, Vol.93 (16), Article 161201

2016

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Defects in SiC for quantum computing

Journal of applied physics, 2011-05, Vol.109 (10), p.102417-102417-5

2011

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Erratum: “Oxygen vacancies and donor impurities in β-Ga2O3” [Appl. Phys. Lett. 97, 142106 (2010)]

Applied physics letters, 2016-01, Vol.108 (3)

2016

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Oxygen vacancies and donor impurities in β-Ga2O3

Applied physics letters, 2010-10, Vol.97 (14)

2010

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Publisher's Note: Defects in AlN as candidates for solid-state qubits [Phys. Rev. B 93 , 161201(R) (2016)]

Physical review. B, 2018-01, Vol.97 (3), Article 039904

2018

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Iron and intrinsic deep level states in Ga2O3

Quantum computing with defects

Electrical properties of point defects in CdS and ZnS

Tunneling and Polaron Charge Transport through Li2O2 in Li–O2 Batteries

Combining steady-state photo-capacitance spectra with first-principles calculations: the case of Fe and Ti in β-Ga2O3

Dual behavior of excess electrons in rutile TiO2

Self-trapped hole and impurity-related broad luminescence in β-Ga2O3

Optical absorption of Fe in doped Ga2O3

Role of self-trapping in luminescence and p -type conductivity of wide-band-gap oxides

Hydrogenated cation vacancies in semiconducting oxides

First-principles characterization of native-defect-related optical transitions in ZnO

Mechanism of Visible-Light Photocatalysis in Nitrogen-Doped TiO2

Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3

Intermixing at the absorber-buffer layer interface in thin-film solar cells: The electronic effects of point defects in Cu(In,Ga)(Se,S)2 and Cu2ZnSn(Se,S)4 devices

Mechanistic insights into nitrogen fixation by nitrogenase enzymes

Ambipolar doping in SnO

Deep level study of chlorine-based dry etched β − Ga2O3

First principles calculations of point defect diffusion in CdS buffer layers: Implications for Cu(In,Ga)(Se,S)2 and Cu2ZnSn(Se,S)4-based thin-film photovoltaics

Transition from electron accumulation to depletion at β-Ga2O3 surfaces: The role of hydrogen and the charge neutrality level

Ni–Fe–S Cubanes in CO2 Reduction Electrocatalysis: A DFT Study

Defects in AlN as candidates for solid-state qubits

Defects in SiC for quantum computing

Erratum: “Oxygen vacancies and donor impurities in β-Ga2O3” [Appl. Phys. Lett. 97, 142106 (2010)]

Oxygen vacancies and donor impurities in β-Ga2O3

Publisher's Note: Defects in AlN as candidates for solid-state qubits [Phys. Rev. B 93 , 161201(R) (2016)]

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