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Fabrication of graphene–ZnO heterostructure-based flexible and thin platform-based UV detector

Journal of materials science. Materials in electronics, 2022-03, Vol.33 (7), p.3880-3890

2022

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Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications

Journal of science. Advanced materials and devices, 2020-06, Vol.5 (2), p.192-198

2020

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Analytical Modeling and Simulation-Based Investigation of AlGaN/AlN/GaN Bio-HEMT Sensor for C-erbB-2 Detection

IEEE sensors journal, 2018-12, Vol.18 (23), p.9595-9603

2018

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Fabrication and Charge Deduction Based Sensitivity Analysis of GaN MOS-HEMT Device for Glucose, MIG, C-erbB-2, KIM-1, and PSA Detection

IEEE transactions on nanotechnology, 2019, Vol.18, p.747-755

2019

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IEEE_Xplore

Junctionfree Gate Stacked Vertical TFET Hydrogen Sensor at Room Temperature

IEEE transactions on nanotechnology, 2022, Vol.21, p.655-662

2022

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IEEE_Xplore

Modeling and Simulation of Ultrahigh Sensitive AlGaN/AlN/GaN HEMT-Based Hydrogen Gas Detector With Low Detection Limit

IEEE sensors journal, 2021-07, Vol.21 (13), p.15361-15368

2021

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IEEE_Xplore

Recent development and futuristic applications of MEMS based piezoelectric microphones

Sensors and actuators. A. Physical., 2022-11, Vol.347, p.113887, Article 113887

2022

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GaN-HEMT on Si as a Robust Visible-blind UV detector with High Responsivity

IEEE sensors journal, 2022-06, Vol.22 (12), p.1-1

2022

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IEEE_Xplore

A Complete Analytical Model for MOS-HEMT Biosensors: Capturing the Effect of Stern Layer and Charge Screening on Sensor Performance

IEEE sensors letters, 2021-04, Vol.5 (4), p.1-4

2021

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IEEE_Xplore

Development of AlGaN/GaN MOSHEMT biosensors: State-of-the-art review and future directions

Materials science in semiconductor processing, 2024-05, Vol.174, p.108225, Article 108225

2024

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AlGaN/GaN HEMT Based pH Detection Using Atomic Layer Deposition of Al 2 O 3 as Sensing Membrane and Passivation

IEEE transactions on nanotechnology, 2023, Vol.22, p.466-472

2023

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Fabrication and Modeling-Based Performance Analysis of Circular GaN MOSHEMT-Based Electrochemical Sensors

IEEE sensors journal, 2021-02, Vol.21 (4), p.4216-4224

2021

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IEEE_Xplore

L G 55 nm T‐gate InGaN / GaN channel based high electron mobility transistors for stable transconductance operation

International journal of RF and microwave computer-aided engineering, 2022-10, Vol.32 (10)

2022

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MEMS-based piezoresistive and capacitive microphones: A review on materials and methods

Materials science in semiconductor processing, 2024-01, Vol.169, p.107879, Article 107879

2024

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AlGaN/GaN HEMT Based pH Detection Using Atomic Layer Deposition of Al2O3 as Sensing Membrane and Passivation

IEEE transactions on nanotechnology, 2023, Vol.22, p.466-472

2023

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IEEE_Xplore

LG 55nm T‐gate InGaN/GaN channel based high electron mobility transistors for stable transconductance operation

International journal of RF and microwave computer-aided engineering, 2022-10, Vol.32 (10)

2022

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LG 55 nm T‐gate InGaN/GaN channel based high electron mobility transistors for stable transconductance operation

International journal of RF and microwave computer-aided engineering, 2022-10, Vol.32 (10), p.n/a

2022

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Enhancement of Johnson figure of merit in III‐V HEMT combined with discrete field plate and AlGaN blocking layer

International journal of RF and microwave computer-aided engineering, 2020-02, Vol.30 (2), p.n/a

2020

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Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: A simulation study

Materials science & engineering. B, Solid-state materials for advanced technology, 2021-11, Vol.273, p.115449, Article 115449

2021

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Optimizing Bio-Sensor Design With Support Vector Regression Technique for AlGaN/GaN MOS-HEMT

IEEE sensors letters, 2023-09, Vol.7 (9), p.1-4

2023

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IEEE_Xplore

Investigation of Influence of SiN and SiO2 Passivation in Gate Field Plate Double Heterojunction Al0.3Ga0.7N/GaN/Al0.04Ga0.96N High Electron Mobility Transistors

SILICON, 2022-02, Vol.14 (4), p.1421-1429

2022

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Leakage Reduction and gm Enhancement in GaN HEMT for Enhanced Sensitivity in Fibrinogen Detection from Human Plasma

2019 IEEE SENSORS, 2019, p.1-4

2019

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IEEE_Xplore

Device Design Space Exploration of Thin Film Hydrogen Sensor Based on Macro-model Generated Using Machine Learning

2019 IEEE SENSORS, 2019, p.1-4

2019

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IEEE_Xplore

AlGaN/AlN/GaN SG-HEMT as pH detector: A simulation study

Materials today : proceedings, 2021, Vol.46, p.5927-5930

2021

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Linear and Circular AlGaN/AlN/GaN MOS-HEMT-based pH Sensor on Si Substrate: A Comparative Analysis

IEEE sensors letters, 2019-04, Vol.3 (4), p.1-4

2019

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IEEE_Xplore

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Fabrication of graphene–ZnO heterostructure-based flexible and thin platform-based UV detector

Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications

Analytical Modeling and Simulation-Based Investigation of AlGaN/AlN/GaN Bio-HEMT Sensor for C-erbB-2 Detection

Fabrication and Charge Deduction Based Sensitivity Analysis of GaN MOS-HEMT Device for Glucose, MIG, C-erbB-2, KIM-1, and PSA Detection

Junctionfree Gate Stacked Vertical TFET Hydrogen Sensor at Room Temperature

Modeling and Simulation of Ultrahigh Sensitive AlGaN/AlN/GaN HEMT-Based Hydrogen Gas Detector With Low Detection Limit

Recent development and futuristic applications of MEMS based piezoelectric microphones

GaN-HEMT on Si as a Robust Visible-blind UV detector with High Responsivity

A Complete Analytical Model for MOS-HEMT Biosensors: Capturing the Effect of Stern Layer and Charge Screening on Sensor Performance

Development of AlGaN/GaN MOSHEMT biosensors: State-of-the-art review and future directions

AlGaN/GaN HEMT Based pH Detection Using Atomic Layer Deposition of Al 2 O 3 as Sensing Membrane and Passivation

Fabrication and Modeling-Based Performance Analysis of Circular GaN MOSHEMT-Based Electrochemical Sensors

L G 55 nm T‐gate InGaN / GaN channel based high electron mobility transistors for stable transconductance operation

MEMS-based piezoresistive and capacitive microphones: A review on materials and methods

AlGaN/GaN HEMT Based pH Detection Using Atomic Layer Deposition of Al2O3 as Sensing Membrane and Passivation

LG 55nm T‐gate InGaN/GaN channel based high electron mobility transistors for stable transconductance operation

LG 55 nm T‐gate InGaN/GaN channel based high electron mobility transistors for stable transconductance operation

Enhancement of Johnson figure of merit in III‐V HEMT combined with discrete field plate and AlGaN blocking layer

Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: A simulation study

Optimizing Bio-Sensor Design With Support Vector Regression Technique for AlGaN/GaN MOS-HEMT

Investigation of Influence of SiN and SiO2 Passivation in Gate Field Plate Double Heterojunction Al0.3Ga0.7N/GaN/Al0.04Ga0.96N High Electron Mobility Transistors

Leakage Reduction and gm Enhancement in GaN HEMT for Enhanced Sensitivity in Fibrinogen Detection from Human Plasma

Device Design Space Exploration of Thin Film Hydrogen Sensor Based on Macro-model Generated Using Machine Learning

AlGaN/AlN/GaN SG-HEMT as pH detector: A simulation study

Linear and Circular AlGaN/AlN/GaN MOS-HEMT-based pH Sensor on Si Substrate: A Comparative Analysis

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