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Electroluminescence in narrow-gap semiconductors CdxHg1-xTe under interband breakdown in an electric field

Journal of luminescence, 2021-12, Vol.240, Article 118409

2021

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Electroluminescence in narrow-gap semiconductors CdHgTe under interband breakdown in an electric field

Journal of luminescence, 2021-12, Vol.240, p.118409, Article 118409

2021

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Arsenic-doped HgCdTe: FTIR photoluminescence and photoreflectance spectroscopy study

Solid state communications, 2024-12, Vol.394, p.115720, Article 115720

2024

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Hall-effect studies of modification of HgCdTe surface properties with ion implantation and thermal annealing

Surface & coatings technology, 2020-07, Vol.393, p.125721, Article 125721

2020

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Electrical characterization of insulator-semiconductor systems based on graded band gap MBE HgCdTe with atomic layer deposited Al2O3 films for infrared detector passivation

Vacuum, 2018-12, Vol.158, p.136-140

2018

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Electrical properties of the Hg0.7Cd0.3Te films grown by MBE method on Si(0 1 3) substrates

Infrared physics & technology, 2018-11, Vol.94, p.11-15

2018

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Admittance studies of modification of HgCdTe surface properties with ion implantation and thermal annealing

Surface & coatings technology, 2020-06, Vol.392, p.1-5, Article 125760

2020

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The relaxation of electrophysical properties HgCdTe epitaxial films affected by plasma of high frequency nanosecond volume discharge in atmospheric-pressure air

Surface & coatings technology, 2020-04, Vol.387, p.125527-5, Article 125527

2020

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Electrophysical properties of [Cd.sub.x][Hg.sub.1-x]Te substrates

Physics of the solid state, 2016-04, p.641

2016

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Analysis of carrier species in arsenic-implanted p- and n-type Hg0.7Cd0.3Te

Infrared physics & technology, 2021-05, Vol.114, p.103665, Article 103665

2021

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Photodiodes based on p-on-n junctions formed in MBE-grown n-type MCT absorber layers for the spectral region 8 to 11 μm

Infrared physics & technology, 2020-03, Vol.105, p.103182, Article 103182

2020

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Direct comparison of the results of arsenic ion implantation in n– and p–type Hg0.8Cd0.2Te

Infrared physics & technology, 2020-09, Vol.109, p.103388, Article 103388

2020

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Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates

Infrared physics & technology, 2017-12, Vol.87, p.129-133

2017

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Electrophysical Properties of p-Type Undoped and Arsenic-Doped [Hg.sub.1-x][Cd.sub.x]Te Epitaxial Layers with x [approximately equal to] 0.4 Grown by the MOCVD Method

Semiconductors (Woodbury, N.Y.), 2018-06, Vol.52 (6), p.702

2018

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Arsenic-ion implantation-induced defects in HgCdTe films studied with Hall-effect measurements and mobility spectrum analysis

Infrared physics & technology, 2019-05, Vol.98, p.230-235

2019

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MBE-grown MCT hetero- and nanostructures for IR and THz detectors

Opto-electronics review, 2019-09, Vol.27 (3), p.282-290

2019

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High operating temperature SWIR p+–n FPA based on MBE-grown HgCdTe/Si(013)

Infrared physics & technology, 2016-05, Vol.76, p.72-74

2016

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Optical and electrical studies of arsenic–implanted HgCdTe films grown with molecular beam epitaxy on GaAs and Si substrates

Infrared physics & technology, 2017-03, Vol.81, p.52-58

2017

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Investigation and characterization of Hg1−xCdxTe epilayers

Journal of alloys and compounds, 2004-11, Vol.382 (1-2), p.288-291

2004

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Admittance of metal–insulator–semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy on GaAs substrates

Infrared physics & technology, 2015-07, Vol.71, p.236-241

2015

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Simultaneous stimulated emission at two frequencies from CdxHg1−xTe semiconducting structure

Journal of luminescence, 2014-07, Vol.151, p.197-200

2014

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Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride

Opto-electronics review, 2019-03, Vol.27 (1), p.14-17

2019

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Nano-size defect layers in arsenic-implanted and annealed HgCdTe epitaxial films studied with transmission electron microscopy

Applied nanoscience, 2020-12, Vol.10 (12), p.4971-4976

2020

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The reverse current temperature dependences of SWIR CdHgTe “p-on-n” and “n-on-p” junctions

Infrared physics & technology, 2015-11, Vol.73, p.312-315

2015

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TEM studies of structural defects in HgTe/HgCdTe quantum wells

Applied nanoscience, 2020-08, Vol.10 (8), p.2867-2871

2020

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Electroluminescence in narrow-gap semiconductors CdxHg1-xTe under interband breakdown in an electric field

Electroluminescence in narrow-gap semiconductors CdHgTe under interband breakdown in an electric field

Arsenic-doped HgCdTe: FTIR photoluminescence and photoreflectance spectroscopy study

Hall-effect studies of modification of HgCdTe surface properties with ion implantation and thermal annealing

Electrical characterization of insulator-semiconductor systems based on graded band gap MBE HgCdTe with atomic layer deposited Al2O3 films for infrared detector passivation

Electrical properties of the Hg0.7Cd0.3Te films grown by MBE method on Si(0 1 3) substrates

Admittance studies of modification of HgCdTe surface properties with ion implantation and thermal annealing

The relaxation of electrophysical properties HgCdTe epitaxial films affected by plasma of high frequency nanosecond volume discharge in atmospheric-pressure air

Electrophysical properties of [Cd.sub.x][Hg.sub.1-x]Te substrates

Analysis of carrier species in arsenic-implanted p- and n-type Hg0.7Cd0.3Te

Photodiodes based on p-on-n junctions formed in MBE-grown n-type MCT absorber layers for the spectral region 8 to 11 μm

Direct comparison of the results of arsenic ion implantation in n– and p–type Hg0.8Cd0.2Te

Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates

Electrophysical Properties of p-Type Undoped and Arsenic-Doped [Hg.sub.1-x][Cd.sub.x]Te Epitaxial Layers with x [approximately equal to] 0.4 Grown by the MOCVD Method

Arsenic-ion implantation-induced defects in HgCdTe films studied with Hall-effect measurements and mobility spectrum analysis

MBE-grown MCT hetero- and nanostructures for IR and THz detectors

High operating temperature SWIR p+–n FPA based on MBE-grown HgCdTe/Si(013)

Optical and electrical studies of arsenic–implanted HgCdTe films grown with molecular beam epitaxy on GaAs and Si substrates

Investigation and characterization of Hg1−xCdxTe epilayers

Admittance of metal–insulator–semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy on GaAs substrates

Simultaneous stimulated emission at two frequencies from CdxHg1−xTe semiconducting structure

Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride

Nano-size defect layers in arsenic-implanted and annealed HgCdTe epitaxial films studied with transmission electron microscopy

The reverse current temperature dependences of SWIR CdHgTe “p-on-n” and “n-on-p” junctions

TEM studies of structural defects in HgTe/HgCdTe quantum wells

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