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Formation of Acceptor Centers in CdHgTe as a Result of Water and Heat Treatments

Semiconductors (Woodbury, N.Y.), 2021-05, Vol.55 (5), p.461-465

2021

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Terahertz Photoluminescence of Double Acceptors in Bulky Epitaxial HgCdTe Layers and HgTe/CdHgTe Structures with Quantum Wells

Journal of experimental and theoretical physics, 2018-12, Vol.127 (6), p.1125-1129

2018

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A Megapixel Matrix Photodetector of the Middle Infrared Range

Journal of communications technology & electronics, 2019-09, Vol.64 (9), p.1011-1015

2019

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Reconversion of the CdHgTe conductivity type after plasma etching process at low temperature

Applied physics letters, 2020-02, Vol.116 (8)

2020

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Photoluminescence of Hg0.3Cd0.7Te and Hg0.7Cd0.3Te Epitaxial Films

Semiconductors (Woodbury, N.Y.), 2024, Vol.58 (2), p.176-179

2024

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Terahertz photoconductivity of double acceptors in narrow gap HgCdTe epitaxial films grown by molecular beam epitaxy on GaAs(013) and Si(013) substrates

Semiconductor science and technology, 2017-09, Vol.32 (9), p.95007

2017

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Accumulation of Arsenic Implantation-Induced Donor Defects in Hg0.7Cd0.3Te Heteroepitaxial Structures

Journal of electronic materials, 2021-06, Vol.50 (6), p.3714-3721

2021

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Investigation of the Effect of Thermal Annealing on the Electrical Properties of the Near-Surface Layer of MBE n-HgCdTe Using MIS Techniques

Journal of electronic materials, 2020-05, Vol.49 (5), p.3202-3208

2020

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Influence of As+ Ion Implantation on Properties of MBE HgCdTe Near-Surface Layer Characterized by Metal–Insulator–Semiconductor Techniques

Journal of electronic materials, 2021-04, Vol.50 (4), p.2323-2330

2021

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Electrical and microscopic characterization of p+-type layers formed in HgCdTe by arsenic implantation

Semiconductor science and technology, 2020-11, Vol.35 (11), p.115019

2020

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Electrical profiling of arsenic-implanted HgCdTe films performed with discrete mobility spectrum analysis

Semiconductor science and technology, 2019-03, Vol.34 (3), p.35009

2019

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Photoluminescence of Molecular Beam Epitaxy-Grown Mercury Cadmium Telluride: Comparison of HgCdTe/GaAs and HgCdTe/Si Technologies

Journal of electronic materials, 2018-08, Vol.47 (8), p.4731-4736

2018

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Ion-milling-assisted study of defect structure of acceptor-doped HgCdTe heterostructures grown by molecular beam epitaxy

Semiconductor science and technology, 2008-09, Vol.23 (9), p.095001

2008

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Hall-effect studies of modification of HgCdTe surface properties with ion implantation and thermal annealing

Surface & coatings technology, 2020-07, Vol.393, p.125721, Article 125721

2020

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Strong Disorder in HgCdTe Studied with Optical Methods and X-Ray Diffraction

Journal of physics. Conference series, 2019-11, Vol.1400 (6), p.66038

2019

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Admittance studies of modification of HgCdTe surface properties with ion implantation and thermal annealing

Surface & coatings technology, 2020-06, Vol.392, p.1-5, Article 125760

2020

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Defect study in molecular beam epitaxy-grown HgCdTe films with activated and unactivated arsenic

Journal of applied physics, 2014-04, Vol.115 (16)

2014

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The Effect of As+ Ion Implantation and Annealing on the Electrical Properties of Near-Surface Layers in Graded-Gap n-Hg0.78Cd0.22Te Films

Technical physics letters, 2021-02, Vol.47 (2), p.189-192

2021

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Nano-scale structural studies of defects in arsenic-implanted n and p-type HgCdTe films

Applied nanoscience, 2022-03, Vol.12 (3), p.395-401

2022

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Investigation of the Differential Resistance of MIS Structures Based on n-Hg0.78Cd0.22Te with Near-Surface Graded-Gap Layers

Journal of communications technology & electronics, 2021-03, Vol.66 (3), p.337-339

2021

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HgCdTe-Based 640 x 512 Matrix Midwave Infrared Photodetector

Journal of communications technology & electronics, 2020-03, Vol.65 (3), p.316

2020

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Distribution profiles of radiation donor defects in arsenic-implanted HgCdTe films

Journal of physics. Conference series, 2018-11, Vol.1115 (3), p.32063

2018

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Evolution of the Impurity Photoconductivity in CdHgTe Epitaxial Films with Temperature

Semiconductors (Woodbury, N.Y.), 2019-09, Vol.53 (9), p.1266-1271

2019

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HgCdTe-Based 640 × 512 Matrix Midwave Infrared Photodetector

Journal of communications technology & electronics, 2020-03, Vol.65 (3), p.316-320

2020

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An Optical Study of Disordering in Cadmium Mercury Telluride Solid Solutions

Technical physics letters, 2019-06, Vol.45 (6), p.553-556

2019

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Formation of Acceptor Centers in CdHgTe as a Result of Water and Heat Treatments

Terahertz Photoluminescence of Double Acceptors in Bulky Epitaxial HgCdTe Layers and HgTe/CdHgTe Structures with Quantum Wells

A Megapixel Matrix Photodetector of the Middle Infrared Range

Reconversion of the CdHgTe conductivity type after plasma etching process at low temperature

Photoluminescence of Hg0.3Cd0.7Te and Hg0.7Cd0.3Te Epitaxial Films

Terahertz photoconductivity of double acceptors in narrow gap HgCdTe epitaxial films grown by molecular beam epitaxy on GaAs(013) and Si(013) substrates

Accumulation of Arsenic Implantation-Induced Donor Defects in Hg0.7Cd0.3Te Heteroepitaxial Structures

Investigation of the Effect of Thermal Annealing on the Electrical Properties of the Near-Surface Layer of MBE n-HgCdTe Using MIS Techniques

Influence of As+ Ion Implantation on Properties of MBE HgCdTe Near-Surface Layer Characterized by Metal–Insulator–Semiconductor Techniques

Electrical and microscopic characterization of p+-type layers formed in HgCdTe by arsenic implantation

Electrical profiling of arsenic-implanted HgCdTe films performed with discrete mobility spectrum analysis

Photoluminescence of Molecular Beam Epitaxy-Grown Mercury Cadmium Telluride: Comparison of HgCdTe/GaAs and HgCdTe/Si Technologies

Ion-milling-assisted study of defect structure of acceptor-doped HgCdTe heterostructures grown by molecular beam epitaxy

Hall-effect studies of modification of HgCdTe surface properties with ion implantation and thermal annealing

Strong Disorder in HgCdTe Studied with Optical Methods and X-Ray Diffraction

Admittance studies of modification of HgCdTe surface properties with ion implantation and thermal annealing

Defect study in molecular beam epitaxy-grown HgCdTe films with activated and unactivated arsenic

The Effect of As+ Ion Implantation and Annealing on the Electrical Properties of Near-Surface Layers in Graded-Gap n-Hg0.78Cd0.22Te Films

Nano-scale structural studies of defects in arsenic-implanted n and p-type HgCdTe films

Investigation of the Differential Resistance of MIS Structures Based on n-Hg0.78Cd0.22Te with Near-Surface Graded-Gap Layers

HgCdTe-Based 640 x 512 Matrix Midwave Infrared Photodetector

Distribution profiles of radiation donor defects in arsenic-implanted HgCdTe films

Evolution of the Impurity Photoconductivity in CdHgTe Epitaxial Films with Temperature

HgCdTe-Based 640 × 512 Matrix Midwave Infrared Photodetector

An Optical Study of Disordering in Cadmium Mercury Telluride Solid Solutions

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