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Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact

Scientific reports, 2017-08, Vol.7 (1), p.8177-10, Article 8177

2017

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Capacitance Temperature Dependence Analysis of GaN-on-Si Power Transistors

Energies (Basel), 2022-10, Vol.15 (19), p.7062

2022

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Impact of Nitrogen Concentration and Post‐Deposition Annealing on Electrical Properties of AlON/Etched N‐GaN MOS Capacitors

Advanced electronic materials, 2024-03, Vol.10 (3), p.n/a

2024

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On the Understanding of Cathode Related Trapping Effects in GaN-on-Si Schottky Diodes

IEEE journal of the Electron Devices Society, 2018-01, Vol.6, p.956-964

2018

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Influence of AlGaN n-type doping and AlN thickness on the two-dimensional electron gas density (ns) and resistance (R2DEG)

Solid-state electronics, 2023-03, Vol.201, p.108594, Article 108594

2023

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Calculation of the mobility in Al2O3/GaN electron channel: Effect of p-doping and comparison with experiments

Solid-state electronics, 2022-12, Vol.198, p.108470, Article 108470

2022

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The effect of AlN nucleation temperature on inverted pyramid defects in GaN layers grown on 200 mm silicon wafers

Journal of crystal growth, 2017-04, Vol.464, p.164-167

2017

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Post-deposition annealing challenges for ALD Al$_{0.5}$Si$_{0.5}$O$_x$/n-GaN MOS devices

Solid-state electronics, 2023, Vol.209

2023

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Investigation on interface charges in SiN/AlxGa1−xN/GaN heterostructures by analyzing the gate-to-channel capacitance and the drain current behaviors

Journal of applied physics, 2021-09, Vol.130 (10)

2021

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Drain voltage impact on charge redistribution in GaN-on-Si E-mode MOSc-HEMTs

2023 IEEE International Reliability Physics Symposium (IRPS), 2023, p.1-6

2023

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The effect of AlN nucleation temperature on inverted pyramid defects in GaN layers grown on 200mm silicon wafers

Journal of crystal growth, 2017-04, Vol.464, p.164-167

2017

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Leakage Current Paths in Isolated AlGaN/GaN Heterostructures

IEEE transactions on semiconductor manufacturing, 2016-11, Vol.29 (4), p.363-369

2016

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Impact of Substrate Biasing During AlN Growth by PEALD on Al2O3/AlN/GaN MOS Capacitors

Advanced materials interfaces, 2022-02, Vol.9 (5), p.n/a

2022

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Impact of Substrate Biasing During AlN Growth by PEALD on Al 2 O 3 /AlN/GaN MOS Capacitors

Advanced materials interfaces, 2022-02, Vol.9 (5)

2022

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Ultra-fast CV methods (< 10µs) for interface trap spectroscopy and BTI reliability characterization using MOS capacitors

2022 IEEE International Reliability Physics Symposium (IRPS), 2022, p.3A.2-1-3A.2-6

2022

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Towards vertical power device 3D packaging on 8-inch wafer

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.135-138

2016

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The single reference Bi-Directional GaN HEMT AC switch

2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe), 2015, p.1-7

2015

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Advanced Substrates for GaN-Based Power Devices

2019 IEEE 69th Electronic Components and Technology Conference (ECTC), 2019, p.168-174

2019

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Demonstration of the normally-off bi-directional GaN AC switch

2016 International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC), 2016, p.1-4

2016

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Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact

Capacitance Temperature Dependence Analysis of GaN-on-Si Power Transistors

Impact of Nitrogen Concentration and Post‐Deposition Annealing on Electrical Properties of AlON/Etched N‐GaN MOS Capacitors

On the Understanding of Cathode Related Trapping Effects in GaN-on-Si Schottky Diodes

Influence of AlGaN n-type doping and AlN thickness on the two-dimensional electron gas density (ns) and resistance (R2DEG)

Calculation of the mobility in Al2O3/GaN electron channel: Effect of p-doping and comparison with experiments

The effect of AlN nucleation temperature on inverted pyramid defects in GaN layers grown on 200 mm silicon wafers

Post-deposition annealing challenges for ALD Al$_{0.5}$Si$_{0.5}$O$_x$/n-GaN MOS devices

Investigation on interface charges in SiN/AlxGa1−xN/GaN heterostructures by analyzing the gate-to-channel capacitance and the drain current behaviors

Drain voltage impact on charge redistribution in GaN-on-Si E-mode MOSc-HEMTs

The effect of AlN nucleation temperature on inverted pyramid defects in GaN layers grown on 200mm silicon wafers

Leakage Current Paths in Isolated AlGaN/GaN Heterostructures

Impact of Substrate Biasing During AlN Growth by PEALD on Al2O3/AlN/GaN MOS Capacitors

Impact of Substrate Biasing During AlN Growth by PEALD on Al 2 O 3 /AlN/GaN MOS Capacitors

Ultra-fast CV methods (< 10µs) for interface trap spectroscopy and BTI reliability characterization using MOS capacitors

Towards vertical power device 3D packaging on 8-inch wafer

The single reference Bi-Directional GaN HEMT AC switch

Advanced Substrates for GaN-Based Power Devices

Demonstration of the normally-off bi-directional GaN AC switch

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