UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 177

Sortiert nach

Imperfect two-dimensional topological insulator field-effect transistors

Nature communications, 2017-01, Vol.8 (1), p.14184-14184, Article 14184

2017

Volltextzugriff (PDF)

Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk

NPJ 2D materials and applications, 2018-03, Vol.2 (1), Article 6

2018

Volltextzugriff (PDF)

Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs

IEEE transactions on electron devices, 2012-02, Vol.59 (2), p.292-301

2012

Volltextzugriff (PDF)

Identification of two-dimensional layered dielectrics from first principles

Nature communications, 2021-08, Vol.12 (1), p.5051-5051, Article 5051

2021

Volltextzugriff (PDF)

Transition-metal nitride halide dielectrics for transition-metal dichalcogenide transistors

Nanoscale, 2021-12, Vol.14 (1), p.157-165

2021

Volltextzugriff (PDF)

Magnetic order and critical temperature of substitutionally doped transition metal dichalcogenide monolayers

NPJ 2D materials and applications, 2021-05, Vol.5 (1), p.1-7, Article 54

2021

Volltextzugriff (PDF)

Figure of merit for and identification of sub-60 mV/decade devices

Applied physics letters, 2013-01, Vol.102 (1)

2013

Volltextzugriff (PDF)

The importance of the image forces and dielectric environment in modeling contacts to two-dimensional materials

NPJ 2D materials and applications, 2023-03, Vol.7 (1), p.14-9, Article 14

2023

Volltextzugriff (PDF)

Electronic Transport Properties of Silicane Determined from First Principles

Materials, 2019-09, Vol.12 (18), p.2935

2019

Volltextzugriff (PDF)

Ab-Initio Study of Magnetically Intercalated Platinum Diselenide: The Impact of Platinum Vacancies

Materials, 2021-07, Vol.14 (15), p.4167

2021

Volltextzugriff (PDF)

A First-Principles Study on the Electronic, Thermodynamic and Dielectric Properties of Monolayer Ca(OH) 2 and Mg(OH) 2

Nanomaterials (Basel, Switzerland), 2022-05, Vol.12 (10), p.1774

2022

Volltextzugriff (PDF)

Carrier transport in two-dimensional topological insulator nanoribbons in the presence of vacancy defects

2d materials, 2019-02, Vol.6 (2), p.25011

2019

Volltextzugriff (PDF)

Algorithmic Optimization of Transistors Applied to Silicon LDMOS

IEEE access, 2023-01, Vol.11, p.1-1

2023

Volltextzugriff (PDF)

Channel Length Optimization for Planar LDMOS Field-Effect Transistors for Low-Voltage Power Applications

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.711-715

2020

Volltextzugriff (PDF)

LDMOS Drift Region With Field Oxides: Figure-of-Merit Derivation and Verification

IEEE journal of the Electron Devices Society, 2022, Vol.10, p.361-366

2022

Volltextzugriff (PDF)

Diamond two-phonon infrared absorption spectrum calculated from first principles using the finite displacement method

Applied physics letters, 2024-04, Vol.124 (15)

2024

Volltextzugriff (PDF)

Reduction of Magnetic Interaction Due to Clustering in Doped Transition-Metal Dichalcogenides: A Case Study of Mn-, V-, and Fe-Doped WSe 2

ACS applied materials & interfaces, 2024-01, Vol.16 (4), p.4991-4998

2024

Volltextzugriff (PDF)

Digital-circuit analysis of short-gate tunnel FETs for low-voltage applications

Semiconductor science and technology, 2011-08, Vol.26 (8), p.085001

2011

Volltextzugriff (PDF)

Charge Mediated Reversible Metal-Insulator Transition in Monolayer MoTe2 and WxMo1-xTe2 Alloy

ACS nano, 2016-08, Vol.10 (8), p.7370-7375

2016

Volltextzugriff (PDF)

Impact of passivation on the Dirac cones of 2D topological insulators

Journal of applied physics, 2022-06, Vol.131 (23)

2022

Volltextzugriff (PDF)

Thermodynamic equilibrium theory revealing increased hysteresis in ferroelectric field-effect transistors with free charge accumulation

Communications physics, 2021-04, Vol.4 (1), p.1-10, Article 86

2021

Volltextzugriff (PDF)

Quantum mechanical solver for confined heterostructure tunnel field-effect transistors

Journal of applied physics, 2014-02, Vol.115 (5)

2014

Volltextzugriff (PDF)

Tunnel field-effect transistor without gate-drain overlap

Applied physics letters, 2007-07, Vol.91 (5), p.053102-053102-3

2007

Volltextzugriff (PDF)

Reduction of Magnetic Interaction Due to Clustering in Doped Transition-Metal Dichalcogenides: A Case Study of Mn‑, V‑, and Fe-Doped WSe2

ACS applied materials & interfaces, 2024-01, Vol.16 (4), p.4991-4998

2024

Volltextzugriff (PDF)

Simulation Study on the Optimization and Scaling Behavior of LDMOS Transistors for Low-Voltage Power Applications

IEEE transactions on electron devices, 2020-11, Vol.67 (11), p.4990-4997

2020

Volltextzugriff (PDF)

1 – 25 von 177

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(110)
Mit Volltextzugriff
(168)

Publikationsform

Sprache

Englisch
(175)
Japanisch
(17)

Erscheinungsjahr

n.n

Thema

Science & Technology
(109)
Physical Sciences
(74)
Physics
(71)
Technology
(66)
Physics, Applied
(62)
Engineering
(43)
Engineering, Electrical & Electronic
(41)
Transistors
(30)
Materials Science
(29)
Materials Science, Multidisciplinary
(27)
Logic Gates
(25)
Physics, Condensed Matter
(22)
Semiconductor Devices
(19)
Tunneling
(18)
Density Functional Theory
(17)
Electric Potential
(16)
Electrical Engineering
(16)
First Principles
(15)
Semiconductor Process Modeling
(15)
Silicon
(15)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

Imperfect two-dimensional topological insulator field-effect transistors

Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk

Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs

Identification of two-dimensional layered dielectrics from first principles

Transition-metal nitride halide dielectrics for transition-metal dichalcogenide transistors

Magnetic order and critical temperature of substitutionally doped transition metal dichalcogenide monolayers

Figure of merit for and identification of sub-60 mV/decade devices

The importance of the image forces and dielectric environment in modeling contacts to two-dimensional materials

Electronic Transport Properties of Silicane Determined from First Principles

Ab-Initio Study of Magnetically Intercalated Platinum Diselenide: The Impact of Platinum Vacancies

A First-Principles Study on the Electronic, Thermodynamic and Dielectric Properties of Monolayer Ca(OH) 2 and Mg(OH) 2

Carrier transport in two-dimensional topological insulator nanoribbons in the presence of vacancy defects

Algorithmic Optimization of Transistors Applied to Silicon LDMOS

Channel Length Optimization for Planar LDMOS Field-Effect Transistors for Low-Voltage Power Applications

LDMOS Drift Region With Field Oxides: Figure-of-Merit Derivation and Verification

Diamond two-phonon infrared absorption spectrum calculated from first principles using the finite displacement method

Reduction of Magnetic Interaction Due to Clustering in Doped Transition-Metal Dichalcogenides: A Case Study of Mn-, V-, and Fe-Doped WSe 2

Digital-circuit analysis of short-gate tunnel FETs for low-voltage applications

Charge Mediated Reversible Metal-Insulator Transition in Monolayer MoTe2 and WxMo1-xTe2 Alloy

Impact of passivation on the Dirac cones of 2D topological insulators

Thermodynamic equilibrium theory revealing increased hysteresis in ferroelectric field-effect transistors with free charge accumulation

Quantum mechanical solver for confined heterostructure tunnel field-effect transistors

Tunnel field-effect transistor without gate-drain overlap

Reduction of Magnetic Interaction Due to Clustering in Doped Transition-Metal Dichalcogenides: A Case Study of Mn‑, V‑, and Fe-Doped WSe2

Simulation Study on the Optimization and Scaling Behavior of LDMOS Transistors for Low-Voltage Power Applications

Suchergebnisse filtern