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Critical discussion on unified 1/f noise models for MOSFETs

IEEE transactions on electron devices, 2000-11, Vol.47 (11), p.2146-2152

2000

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Noise as a diagnostic tool for quality and reliability of electronic devices

IEEE transactions on electron devices, 1994-11, Vol.41 (11), p.2176-2187

Vandamme, L.K.J.

1994

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General relation between refractive index and energy gap in semiconductors

Infrared physics & technology, 1994-06, Vol.35 (4), p.609-615

1994

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Extraction and modeling of self-heating and mutual thermal coupling impedance of bipolar transistors

IEEE journal of solid-state circuits, 2004-10, Vol.39 (10), p.1764-1772

2004

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Modeling random telegraph noise under switched bias conditions using cyclostationary RTS noise

IEEE transactions on electron devices, 2003-05, Vol.50 (5), p.1378-1384

2003

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On the additivity of generation-recombination spectra Part 3: The McWhorter model for 1/ f noise in MOSFETs

Physica. B, Condensed matter, 2005-03, Vol.357 (3), p.507-524

2005

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Measurement of low-frequency base and collector current noise and coherence in SiGe heterojunction bipolar transistors using transimpedance amplifiers

IEEE transactions on electron devices, 1999-05, Vol.46 (5), p.993-1000

1999

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Suppression of contact noise in a study on 1/f noise as a function of film thickness in Al-doped ZnO

Thin solid films, 2018-01, Vol.645, p.70-76

2018

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Improved correlation measurements using voltage and transimpedance amplifiers in low-frequency noise characterization of bipolar transistors

IEEE transactions on electron devices, 2000-09, Vol.47 (9), p.1772-1773

2000

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What Do We Certainly Know Abouthbox{1}/f$ Noise in MOSTs?

IEEE transactions on electron devices, 2008-11, Vol.55 (11), p.3070-3085

2008

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On the anomalous behavior of the relative amplitude of RTS noise

Solid-state electronics, 1998-06, Vol.42 (6), p.901-905

1998

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Low frequency gate noise in a diode-connected MESFET: measurements and modeling

IEEE transactions on electron devices, 2001-04, Vol.48 (4), p.628-633

2001

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1/ f noise in polyaniline/polyurethane (PANI/PU) blends

Synthetic metals, 2009, Vol.159 (1), p.1-6

2009

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What Do We Certainly Know About [Formula Omitted] Noise in MOSTs?

IEEE transactions on electron devices, 2008-11, Vol.55 (11), p.3070

2008

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Parameter extraction and 1/ f noise in a surface and a bulk-type, p-channel LDD MOSFET

Solid-state electronics, 1994-11, Vol.37 (11), p.1853-1862

1994

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Separation of random telegraph signals from 1/f noise in MOSFETs under constant and switched bias conditions

ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003, 2003, p.549-552

2003

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1/f noise in MOS devices, mobility or number fluctuations?

IEEE transactions on electron devices, 1994-11, Vol.41 (11), p.1936-1945

1994

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What Do We Certainly Know About \hbox/f Noise in MOSTs?

IEEE transactions on electron devices, 2008-11, Vol.55 (11), p.3070-3085

2008

Volltextzugriff (PDF)

Coherence between gate- and drain-current fluctuations in MESFET's and MODFET's biased in the ohmic region

IEEE transactions on electron devices, 1992-10, Vol.39 (10), p.2377-2382

1992

Volltextzugriff (PDF)

Thermal annealing of MgO substrate increases 1/ f noise in YBaCuO x at 300 K and reduces the sheet resistance in the superconducting thin film

Physica. C, Superconductivity, 2005-09, Vol.425 (1), p.27-36

2005

Volltextzugriff (PDF)

Thermal annealing of MgO substrate increases 1/f noise in YBaCuOx at 300K and reduces the sheet resistance in the superconducting thin film

Physica. C, Superconductivity, 2005-09, Vol.425 (1-2), p.27-36

2005

Volltextzugriff (PDF)

Current crowding and its effect on 1/ f noise and third harmonic distortion – a case study for quality assessment of resistors

Microelectronics and reliability, 2000-11, Vol.40 (11), p.1847-1853

2000

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Correlation between most 1/ f noise and CCD transfer inefficiency

Solid-state electronics, 1985-01, Vol.28 (10), p.1049-1056

1985

Volltextzugriff (PDF)

Impact of silicon substrate, iron contamination and perimeter on saturation current and noise in n+p diodes

Solid-state electronics, 1997-06, Vol.41 (6), p.901-908

1997

Volltextzugriff (PDF)

1/f noise in MODFETs at low drain bias

IEEE transactions on electron devices, 1990-10, Vol.37 (10), p.2250-2253

1990

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Critical discussion on unified 1/f noise models for MOSFETs

Noise as a diagnostic tool for quality and reliability of electronic devices

General relation between refractive index and energy gap in semiconductors

Extraction and modeling of self-heating and mutual thermal coupling impedance of bipolar transistors

Modeling random telegraph noise under switched bias conditions using cyclostationary RTS noise

On the additivity of generation-recombination spectra Part 3: The McWhorter model for 1/ f noise in MOSFETs

Measurement of low-frequency base and collector current noise and coherence in SiGe heterojunction bipolar transistors using transimpedance amplifiers

Suppression of contact noise in a study on 1/f noise as a function of film thickness in Al-doped ZnO

Improved correlation measurements using voltage and transimpedance amplifiers in low-frequency noise characterization of bipolar transistors

What Do We Certainly Know Abouthbox{1}/f$ Noise in MOSTs?

On the anomalous behavior of the relative amplitude of RTS noise

Low frequency gate noise in a diode-connected MESFET: measurements and modeling

1/ f noise in polyaniline/polyurethane (PANI/PU) blends

What Do We Certainly Know About [Formula Omitted] Noise in MOSTs?

Parameter extraction and 1/ f noise in a surface and a bulk-type, p-channel LDD MOSFET

Separation of random telegraph signals from 1/f noise in MOSFETs under constant and switched bias conditions

1/f noise in MOS devices, mobility or number fluctuations?

What Do We Certainly Know About \hbox/f Noise in MOSTs?

Coherence between gate- and drain-current fluctuations in MESFET's and MODFET's biased in the ohmic region

Thermal annealing of MgO substrate increases 1/ f noise in YBaCuO x at 300 K and reduces the sheet resistance in the superconducting thin film

Thermal annealing of MgO substrate increases 1/f noise in YBaCuOx at 300K and reduces the sheet resistance in the superconducting thin film

Current crowding and its effect on 1/ f noise and third harmonic distortion – a case study for quality assessment of resistors

Correlation between most 1/ f noise and CCD transfer inefficiency

Impact of silicon substrate, iron contamination and perimeter on saturation current and noise in n+p diodes

1/f noise in MODFETs at low drain bias

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