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4H-SiC Visible-Blind Single-Photon Avalanche Diode for Ultraviolet Detection at 280 and 350 nm

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.1977-1983

2008

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AlGaN/SiC Heterojunction Ultraviolet Photodiodes

Materials Science Forum, 2016-05, Vol.858, p.1206-1209

2016

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Basal plane dislocation reduction for 8° off-cut, 4H-SiC using in situ variable temperature growth interruptions

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2008-07, Vol.26 (4), p.1504-1507

2008

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Basal plane dislocation reduction in 4 H -SiC epitaxy by growth interruptions

Applied physics letters, 2009-01, Vol.94 (4), p.041916-041916-3

2009

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Basal plane dislocation reduction in 4H-SiC epitaxy by growth interruptions

Applied physics letters, 2009-01, Vol.94 (4)

2009

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Comparative Investigation Between X-ray Diffraction and Cross Polarization Mapping of 4H-SiC Wafers Off-cut 4 deg Towards (11-20)

Materials science forum, 2007-01, Vol.556-557, p.235-238

2007

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Comparative Investigation between X-Ray Diffraction and Cross Polarization Mapping of 4H-SiC Wafers Off-Cut 4° Towards (11-20)

Materials science forum, 2007-09, Vol.556-557, p.235-238

2007

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Compensation in Be-doped Gallium Nitride Grown Using Molecular Beam Epitaxy

MRS proceedings, 2005-12, Vol.892 (1), Article 2813

2005

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Development of wafer-scale graphene RF electronics

The 5th European Microwave Integrated Circuits Conference, 2010, p.254-257

2010

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Development toward Wafer-Scale Graphene RF Electronics

ECS transactions, 2009, Vol.19 (5), p.35-40

2009

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Development toward wafer-scale graphene RF electronics

2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010, p.1-3

2010

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Effect of growth conditions, surface orientation, and alloy composition on Cl incorporation and activation in ZnSe and Zn 1 − x Mg x Se grown by molecular beam epitaxy

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2005-07, Vol.23 (4), p.1814-1820

2005

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Effect of growth conditions, surface orientation, and alloy composition on Cl incorporation and activation in ZnSe and Zn1−xMgxSe grown by molecular beam epitaxy

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2005-07, Vol.23 (4), p.1814-1820

2005

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The effect of high energy electrons during the growth of ZnSe and ZnMgSe by molecular beam epitaxy

Journal of electronic materials, 2001-06, Vol.30 (6), p.785-788

2001

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Effect of propagation and rooting conditions on acclimatization of micropropagated plants

Acta Botanica Neerlandica, 1992-12, Vol.41 (4), p.453-459

1992

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Effect of threading screw and edge dislocations on transport properties of 4H–SiC homoepitaxial layers

Journal of applied physics, 2010-07, Vol.108 (1)

2010

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Effect of threading screw and edge dislocations on transport propertiesof 4H-SiC homoepitaxial layers

Journal of applied physics, 2010-07, Vol.108 (1), p.013708-013708-6

2010

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Effect on chlorine incorporation as Mg is alloyed into ZnSe

Physical review. B, Condensed matter, 2002-10, Vol.66 (16), Article 165222

2002

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Effects of Nitrogen Doping on Basal Plane Dislocation Reduction in 8° Off-Cut 4H-SiC Epilayers

Materials science forum, 2011-03, Vol.679-680, p.63-66, Article 63

2011

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The efficiency of oxidative phosphorylation in potato-tuber mitochondria is different for succinate and external NADH

Biochimica et biophysica acta. Bioenergetics, 1992-11, Vol.1140 (1), p.37-44

1992

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Epitaxial Graphene Growth on SiC Wafers

ECS transactions, 2009, Vol.19 (5), p.117-124

2009

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Epitaxial graphene RF field-effect transistors

2009 Device Research Conference, 2009, p.195-196

2009

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Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates

IEEE electron device letters, 2009-06, Vol.30 (6), p.650-652

2009

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Etch rates near hot-wall CVD growth temperature for Si-face 4H-SiC using H sub(2) and C sub(3)H sub(8)

Journal of crystal growth, 2009-01, Vol.311 (2), p.238-243

2009

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Etch rates near hot-wall CVD growth temperature for Si-face 4H-SiC using H2 and C3H8

Journal of crystal growth, 2009, Vol.311 (2), p.238-243

2009

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