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Exciton localization and the Stokes’ shift in InGaN epilayers

Applied physics letters, 1999-01, Vol.74 (2), p.263-265

1999

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Indium segregation in InGaN quantum-well structures

Applied physics letters, 2000-03, Vol.76 (12), p.1600-1602

2000

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Chemical ordering in wurtzite InxGa1−xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxy

Applied physics letters, 1998-04, Vol.72 (14), p.1742-1744

1998

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MOVPE growth optimization of high quality InGaN films

MRS Internet journal of nitride semiconductor research, 1997, Vol.2, Article e16

1997

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Elastic strain in In0.18Ga0.82N layer: A combined x-ray diffraction and Rutherford backscattering/channeling study

Applied physics letters, 1999-01, Vol.74 (3), p.365-367

1999

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Optical linewidths of InGaN light emitting diodes and epilayers

Applied physics letters, 1997-04, Vol.70 (14), p.1843-1845

1997

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The dependence of the optical energies on InGaN composition

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-05, Vol.82 (1), p.194-196

2001

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Confocal microscopy and spectroscopy of InGaN epilayers on sapphire

Journal of microscopy (Oxford), 1999-02, Vol.193 (2), p.105-108

1999

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Elastic strain in InGaN and AlGaN layers

Materials science & engineering. B, Solid-state materials for advanced technology, 2000-06, Vol.75 (2), p.232-235

2000

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Study of GaN and InGaN films grown by metalorganic chemical vapour deposition

Journal of crystal growth, 1997-01, Vol.170 (1-4), p.344-348

1997

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Effects of Carrier Gas on the Properties of InGaN/GaN Quantum Well Structures Grown by MOCVD

physica status solidi (b), 1999-11, Vol.216 (1), p.355-359

1999

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Energy-dispersive x-ray imaging of an InGaN/GaN bilayer on sapphire

Applied physics letters, 1998-11, Vol.73 (22), p.3273-3275

1998

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Photoluminescence Mapping and Rutherford Backscattering Spectrometry of InGaN Epilayers

physica status solidi (b), 1999-11, Vol.216 (1), p.171-174

1999

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The optical and structural properties of InGaN epilayers with very high indium content

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-05, Vol.59 (1), p.292-297

1999

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Spectroscopy and microscopy of localised and delocalised excitons in InGaN-based light emitting diodes and epilayers

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-05, Vol.59 (1), p.288-291

1999

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Growth and in situ monitoring of GaN using IR interference effects

Journal of crystal growth, 1998-12, Vol.195 (1), p.192-198

1998

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The optical linewidth of InGaN light emitting diodes

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-12, Vol.50 (1), p.285-288

1997

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Interpretation of the Temperature-Dependent Transport Properties of GaN/Sapphire Films Grown by MBE and MOCVD

Physica status solidi. A, Applied research, 1999-11, Vol.176 (1), p.363-367

1999

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Probing The Indium Mole Fraction In An Ingan Epilayer By Depth Resolved Cathodoluminescence

MRS proceedings, 1997, Vol.482, Article 715

1997

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Rutherford backscattering/channeling study of a thin AlGaN layer on Al2O3(0001)

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2001-03, Vol.174 (1-2), p.181-186

2001

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Intrinsic Infrared Luminescence from InGaN Epilayers

physica status solidi (b), 1999-11, Vol.216 (1), p.141-144

1999

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Dependence of the E 2 and A 1 (LO) modes on InN fraction in InGaN epilayers

MRS proceedings, 2004, Vol.831, Article E3.22

2004

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Dependence of the E2 and A1(LO) modes on InN fraction in InGaN epilayers

MRS proceedings, 2004, Vol.831

2004

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Rutherford backscattering/channeling study of a thin AlGaN layer on Al 2O 3(0 0 0 1)

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2001, Vol.174 (1), p.181-186

2001

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Extended X-ray Absorption Fine Structure Studies of InGaN Epilayers

MRS proceedings, 2004, Vol.831, Article E3.30

2004

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Exciton localization and the Stokes’ shift in InGaN epilayers

Indium segregation in InGaN quantum-well structures

Chemical ordering in wurtzite InxGa1−xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxy

MOVPE growth optimization of high quality InGaN films

Elastic strain in In0.18Ga0.82N layer: A combined x-ray diffraction and Rutherford backscattering/channeling study

Optical linewidths of InGaN light emitting diodes and epilayers

The dependence of the optical energies on InGaN composition

Confocal microscopy and spectroscopy of InGaN epilayers on sapphire

Elastic strain in InGaN and AlGaN layers

Study of GaN and InGaN films grown by metalorganic chemical vapour deposition

Effects of Carrier Gas on the Properties of InGaN/GaN Quantum Well Structures Grown by MOCVD

Energy-dispersive x-ray imaging of an InGaN/GaN bilayer on sapphire

Photoluminescence Mapping and Rutherford Backscattering Spectrometry of InGaN Epilayers

The optical and structural properties of InGaN epilayers with very high indium content

Spectroscopy and microscopy of localised and delocalised excitons in InGaN-based light emitting diodes and epilayers

Growth and in situ monitoring of GaN using IR interference effects

The optical linewidth of InGaN light emitting diodes

Interpretation of the Temperature-Dependent Transport Properties of GaN/Sapphire Films Grown by MBE and MOCVD

Probing The Indium Mole Fraction In An Ingan Epilayer By Depth Resolved Cathodoluminescence

Rutherford backscattering/channeling study of a thin AlGaN layer on Al2O3(0001)

Intrinsic Infrared Luminescence from InGaN Epilayers

Dependence of the E 2 and A 1 (LO) modes on InN fraction in InGaN epilayers

Dependence of the E2 and A1(LO) modes on InN fraction in InGaN epilayers

Rutherford backscattering/channeling study of a thin AlGaN layer on Al 2O 3(0 0 0 1)

Extended X-ray Absorption Fine Structure Studies of InGaN Epilayers

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