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Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices

New journal of physics, 2013-12, Vol.15 (12), p.125006-14

2013

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Monolayer to Bulk Properties of Hexagonal Boron Nitride

Journal of physical chemistry. C, 2018-11, Vol.122 (44), p.25524-25529

2018

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Advanced Calculations for Defects in Materials: Electronic Structure Methods

1, 2011

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Tutorial: Defects in semiconductors—Combining experiment and theory

Journal of applied physics, 2016-05, Vol.119 (18)

2016

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Correctly Assessing Defect Tolerance in Halide Perovskites

Journal of physical chemistry. C, 2020-03, Vol.124 (11), p.6022-6027

2020

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Minimizing hydrogen vacancies to enable highly efficient hybrid perovskites

Nature materials, 2021-07, Vol.20 (7), p.971-976

2021

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Structural and electronic properties of Ga2O3-Al2O3 alloys

Applied physics letters, 2018-06, Vol.112 (24)

2018

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Shallow versus deep nature of Mg acceptors in nitride semiconductors

Physical review letters, 2012-04, Vol.108 (15), p.156403-156403, Article 156403

2012

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Hydrogen multicentre bonds

Nature materials, 2007-01, Vol.6 (1), p.44-47

2007

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First-principles theory of the luminescence lineshape for the triplet transition in diamond NV centres

New journal of physics, 2014-07, Vol.16 (7), p.73026-23

2014

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Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes

Applied physics letters, 2012-12, Vol.101 (23)

2012

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Computationally predicted energies and properties of defects in GaN

npj computational materials, 2017-03, Vol.3 (1), p.1-10, Article 12

2017

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Piezoelectric effect and polarization switching in Al1−xScxN

Journal of applied physics, 2021-09, Vol.130 (10)

2021

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Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN

The Journal of chemical physics, 2011-02, Vol.134 (8), p.084703-084703-11

2011

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Sub-band-gap absorption in Ga2O3

Applied physics letters, 2017-10, Vol.111 (18)

2017

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Finite-size correction for slab supercell calculations of materials with spontaneous polarization

npj computational materials, 2021-04, Vol.7 (1), p.1-9, Article 58

2021

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Impact of Group-II Acceptors on the Electrical and Optical Properties of GaN

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JJ04-08JJ04-5

2013

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Effects of strain on the band structure of group-III nitrides

Physical review. B, Condensed matter and materials physics, 2014-09, Vol.90 (12), Article 125118

2014

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Universal alignment of hydrogen levels in semiconductors, insulators and solutions

Nature (London), 2003-06, Vol.423 (6940), p.626-628

2003

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Origins of optical absorption and emission lines in AlN

Applied physics letters, 2014-09, Vol.105 (11)

2014

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Exciton-dominated Dielectric Function of Atomically Thin MoS2 Films

Scientific reports, 2015-11, Vol.5 (1), p.16996-16996, Article 16996

2015

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Electronic and protonic conduction in LaFeO3

2017

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Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters

Applied physics letters, 2016-04, Vol.108 (14)

2016

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BaSnO3 as a channel material in perovskite oxide heterostructures

Applied physics letters, 2016-02, Vol.108 (8)

2016

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Trap Passivation for Reducing On-Resistance and Saturation Voltage in Wafer-Bonded InGaAs-Channel/GaN-Drain Vertical FETs

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1-8

2024

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Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices

Monolayer to Bulk Properties of Hexagonal Boron Nitride

Advanced Calculations for Defects in Materials: Electronic Structure Methods

Tutorial: Defects in semiconductors—Combining experiment and theory

Correctly Assessing Defect Tolerance in Halide Perovskites

Minimizing hydrogen vacancies to enable highly efficient hybrid perovskites

Structural and electronic properties of Ga2O3-Al2O3 alloys

Shallow versus deep nature of Mg acceptors in nitride semiconductors

Hydrogen multicentre bonds

First-principles theory of the luminescence lineshape for the triplet transition in diamond NV centres

Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes

Computationally predicted energies and properties of defects in GaN

Piezoelectric effect and polarization switching in Al1−xScxN

Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN

Sub-band-gap absorption in Ga2O3

Finite-size correction for slab supercell calculations of materials with spontaneous polarization

Impact of Group-II Acceptors on the Electrical and Optical Properties of GaN

Effects of strain on the band structure of group-III nitrides

Universal alignment of hydrogen levels in semiconductors, insulators and solutions

Origins of optical absorption and emission lines in AlN

Exciton-dominated Dielectric Function of Atomically Thin MoS2 Films

Electronic and protonic conduction in LaFeO3

Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters

BaSnO3 as a channel material in perovskite oxide heterostructures

Trap Passivation for Reducing On-Resistance and Saturation Voltage in Wafer-Bonded InGaAs-Channel/GaN-Drain Vertical FETs

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