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Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Applied physics letters, 2015-08, Vol.107 (9)

2015

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Impact of crystal orientation on ohmic contact resistance of enhancement-mode p-GaN gate high electron mobility transistors on 200 mm silicon substrates

Japanese Journal of Applied Physics, 2018-04, Vol.57 (4S), p.4

2018

Volltextzugriff (PDF)

Power electronics with wide bandgap materials: Toward greener, more efficient technologies

MRS bulletin, 2015-05, Vol.40 (5), p.390-395

2015

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Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs

IEEE electron device letters, 2016-04, Vol.37 (4), p.474-477

2016

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Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs

IEEE transactions on electron devices, 2017-09, Vol.64 (9), p.3616-3621

2017

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Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate

IEEE transactions on electron devices, 2016-03, Vol.63 (3), p.997-1004

2016

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CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon

IEEE electron device letters, 2012-05, Vol.33 (5), p.667-669

2012

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Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs

IEEE transactions on electron devices, 2016-05, Vol.63 (5), p.1853-1860

2016

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Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs

IEEE electron device letters, 2014-10, Vol.35 (10), p.1004-1006

2014

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Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration

IEEE electron device letters, 2018-07, Vol.39 (7), p.999-1002

2018

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Investigation on Carrier Transport Through AlN Nucleation Layer From Differently Doped Si(111) Substrates

IEEE transactions on electron devices, 2018-05, Vol.65 (5), p.1721-1727

2018

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Evidence of Hot-Electron Degradation in GaN-Based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress

IEEE electron device letters, 2016-11, Vol.37 (11), p.1415-1417

2016

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Au-free low temperature ohmic contacts for AlGaN/GaN power devices on 200 mm Si substrates

Japanese Journal of Applied Physics, 2014-04, Vol.53 (4S), p.4

2014

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AlN/AlGaN/GaN buffer optimization on silicon (111): bow and crystal quality control for Si-CMOS fabs

Physica status solidi. C, 2014-02, Vol.11 (3-4), p.450-453

2014

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Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate

Physica status solidi. A, Applications and materials science, 2015-05, Vol.212 (5), p.1122-1129

2015

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A 96% Efficient High-Frequency DC-DC Converter Using E-Mode GaN DHFETs on Si

IEEE electron device letters, 2011-10, Vol.32 (10), p.1370-1372

2011

Volltextzugriff (PDF)

AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance

Japanese Journal of Applied Physics, 2009-04, Vol.48 (4S), p.4

2009

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Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal

Applied physics letters, 2010-09, Vol.97 (11)

2010

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Silicon Substrate Removal of GaN DHFETs for Enhanced (<1100 V) Breakdown Voltage

IEEE electron device letters, 2010-08, Vol.31 (8), p.851-853

2010

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Limitations of Field Plate Effect Due to the Silicon Substrate in AlGaN/GaN/AlGaN DHFETs

IEEE transactions on electron devices, 2010-12, Vol.57 (12), p.3333-3339

2010

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Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress

Microelectronics and reliability, 2014-09, Vol.54 (9-10), p.2232-2236

2014

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Electrically active defects at AlN/Si interface studied by DLTS and ESR

Physica status solidi. A, Applications and materials science, 2012-10, Vol.209 (10), p.1851-1856

2012

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Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN/GaN high electron mobility transistors on 200 mm Si substrates

Japanese Journal of Applied Physics, 2015-04, Vol.54 (4S), p.4-1-04DF02-4

2015

Volltextzugriff (PDF)

Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

IEEE electron device letters, 2015-10, Vol.36 (10), p.1001-1003

2015

Volltextzugriff (PDF)

200 V Enhancement-Mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI With Trench Isolation for Monolithic Integration

IEEE electron device letters, 2017-07, Vol.38 (7), p.918-921

2017

Volltextzugriff (PDF)

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Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Impact of crystal orientation on ohmic contact resistance of enhancement-mode p-GaN gate high electron mobility transistors on 200 mm silicon substrates

Power electronics with wide bandgap materials: Toward greener, more efficient technologies

Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs

Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs

Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate

CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon

Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs

Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs

Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration

Investigation on Carrier Transport Through AlN Nucleation Layer From Differently Doped Si(111) Substrates

Evidence of Hot-Electron Degradation in GaN-Based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress

Au-free low temperature ohmic contacts for AlGaN/GaN power devices on 200 mm Si substrates

AlN/AlGaN/GaN buffer optimization on silicon (111): bow and crystal quality control for Si-CMOS fabs

Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate

A 96% Efficient High-Frequency DC-DC Converter Using E-Mode GaN DHFETs on Si

AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance

Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal

Silicon Substrate Removal of GaN DHFETs for Enhanced (<1100 V) Breakdown Voltage

Limitations of Field Plate Effect Due to the Silicon Substrate in AlGaN/GaN/AlGaN DHFETs

Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress

Electrically active defects at AlN/Si interface studied by DLTS and ESR

Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN/GaN high electron mobility transistors on 200 mm Si substrates

Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

200 V Enhancement-Mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI With Trench Isolation for Monolithic Integration

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