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GaN n- and p-type Schottky diodes: Effect of dry etch damage

IEEE transactions on electron devices, 2000-07, Vol.47 (7), p.1320-1324

2000

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GaN growth by a controllable RF-excited nitrogen source

Journal of crystal growth, 1995-05, Vol.150 (1-4), p.908-911

1995

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Electrical effects of plasma damage in p-GaN

Applied physics letters, 1999-10, Vol.75 (17), p.2569-2571

1999

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Reflection high energy electron diffraction measurement of surface diffusion during the growth of gallium arsenide by MBE

Journal of crystal growth, 1987-02, Vol.81 (1), p.13-18

1987

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Depth and thermal stability of dry etch damage in GaN Schottky diodes

Applied physics letters, 1999-07, Vol.75 (2), p.232-234

1999

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(111) InAs/GaInSb strained-layer superlattice growth investigation

Journal of crystal growth, 1995-05, Vol.150 (1-4), p.849-852

1995

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A selective dry-etch technique for GaAs MESFET gate recessing

IEEE transactions on electron devices, 1988-10, Vol.35 (10), p.1580-1584

1988

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Plasma damage in p-GaN

Journal of electronic materials, 2000-03, Vol.29 (3), p.256-261

2000

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GaN/AlGaN HBT fabrication

Solid-state electronics, 2000-02, Vol.44 (2), p.239-244

2000

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GaN PN junction issues and developments

Solid-state electronics, 2000-02, Vol.44 (2), p.377-381

2000

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Effect of thermal stability of GaN epi-layer on the Schottky diodes

Solid-state electronics, 2000-07, Vol.44 (7), p.1203-1208

2000

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MBE grown AlGaN/GaN MODFETs with high breakdown voltage

Journal of crystal growth, 1999-05, Vol.201, p.327-331

1999

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High temperature characteristics of GaN-based heterojunction bipolar transistors and bipolar junction transistors

Solid-state electronics, 2000-04, Vol.44 (4), p.649-654

2000

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Simulation of GaN/AlGaN heterojunction bipolar transistors: part I – npn structures

Solid-state electronics, 2000-07, Vol.44 (7), p.1255-1259

2000

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III-N light emitting diodes fabricated using RF nitrogen gas source MBE

Journal of crystal growth, 1996-07, Vol.164 (1), p.154-158

1996

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Simulation of GaN/AlGaN heterojunction bipolar transistors: part II – pnp structures

Solid-state electronics, 2000-07, Vol.44 (7), p.1261-1265

2000

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npn AlGaN/GaN heterojunction bipolar transistors and GaN bipolar junction transistors with regrown C-doped GaAs in the base regions

Solid-state electronics, 2000-12, Vol.44 (12), p.2097-2100

2000

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Electronic structure, surface composition and long-range order in GaN

Physica. B, Condensed matter, 1993-04, Vol.185 (1), p.415-421

1993

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Nondestructive Characterization of GaN Films Grown at Low and High Temperatures

MRS proceedings, 1999, Vol.591, Article 313

1999

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Uniformity and high temperature performance of X-band nitride power HEMTs fabricated from 2-inch epitaxy

Solid-state electronics, 1998-12, Vol.42 (12), p.2183-2185

1998

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Optimization of AlGaN films grown by RF atomic nitrogen plasma using in-situ cathodoluminescence

Journal of crystal growth, 1997-05, Vol.175-176, p.79-83

1997

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Surface Conversion Effects in Plasma-Damaged p-GaN

MRS proceedings, 1999, Vol.595, Article F99W10.8

1999

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High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl 2 /Ar Discharges

MRS proceedings, 1999, Vol.595, Article F99W11.66

1999

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High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar Discharges

MRS proceedings, 1999, Vol.595

1999

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p-GaAs Base Regrowth for GaN HBTs and BJTs

MRS proceedings, 2000, Vol.622, Article T6.13.1

2000

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GaN n- and p-type Schottky diodes: Effect of dry etch damage

GaN growth by a controllable RF-excited nitrogen source

Electrical effects of plasma damage in p-GaN

Reflection high energy electron diffraction measurement of surface diffusion during the growth of gallium arsenide by MBE

Depth and thermal stability of dry etch damage in GaN Schottky diodes

(111) InAs/GaInSb strained-layer superlattice growth investigation

A selective dry-etch technique for GaAs MESFET gate recessing

Plasma damage in p-GaN

GaN/AlGaN HBT fabrication

GaN PN junction issues and developments

Effect of thermal stability of GaN epi-layer on the Schottky diodes

MBE grown AlGaN/GaN MODFETs with high breakdown voltage

High temperature characteristics of GaN-based heterojunction bipolar transistors and bipolar junction transistors

Simulation of GaN/AlGaN heterojunction bipolar transistors: part I – npn structures

III-N light emitting diodes fabricated using RF nitrogen gas source MBE

Simulation of GaN/AlGaN heterojunction bipolar transistors: part II – pnp structures

npn AlGaN/GaN heterojunction bipolar transistors and GaN bipolar junction transistors with regrown C-doped GaAs in the base regions

Electronic structure, surface composition and long-range order in GaN

Nondestructive Characterization of GaN Films Grown at Low and High Temperatures

Uniformity and high temperature performance of X-band nitride power HEMTs fabricated from 2-inch epitaxy

Optimization of AlGaN films grown by RF atomic nitrogen plasma using in-situ cathodoluminescence

Surface Conversion Effects in Plasma-Damaged p-GaN

High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl 2 /Ar Discharges

High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar Discharges

p-GaAs Base Regrowth for GaN HBTs and BJTs

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