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Position-Controlled Uniform GaAs Nanowires on Silicon using Nanoimprint Lithography

Nano letters, 2014-02, Vol.14 (2), p.960-966

2014

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Atomic-scale 3D imaging of individual dopant atoms in an oxide semiconductor

Nature communications, 2022-08, Vol.13 (1), p.4783-7, Article 4783

2022

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The effect of Cu on precipitation in Al-Mg-Si alloys

Philosophical magazine (Abingdon, England), 2007-08, Vol.87 (23), p.3385-3413

2007

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Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires

Journal of applied physics, 2014-10, Vol.116 (14)

2014

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Compositional analysis of GaAs/AlGaAs heterostructures using quantitative scanning transmission electron microscopy

Applied physics letters, 2013-12, Vol.103 (23)

2013

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Controlling crystal phases in GaAs nanowires grown by Au-assisted molecular beam epitaxy

Nanotechnology, 2013-01, Vol.24 (1), p.015601-015601

2013

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Evaluating focused ion beam patterning for position-controlled nanowire growth using computer vision

Journal of physics. Conference series, 2017-09, Vol.902 (1), p.12020

2017

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Processing and indexing of electron backscatter patterns using open-source software

IOP conference series. Materials Science and Engineering, 2020-07, Vol.891 (1), p.12002

2020

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Characterization of ferroelectric domain walls by scanning electron microscopy

Journal of applied physics, 2020-11, Vol.128 (19)

2020

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The effects of Sb concentration variation on the optical properties of GaAsSb GaAs heterostructured nanowires

Semiconductor science and technology, 2013-11, Vol.28 (11), p.115004

2013

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Correlated micro-photoluminescence and electron microscopy study of a heterostructured semiconductor nanowire

Journal of physics. Conference series, 2011-11, Vol.326 (1), p.012043-4

2011

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Moiré fringes in conductive atomic force microscopy

Applied physics letters, 2023-04, Vol.122 (16)

2023

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Zinc blende GaAsSb nanowires grown by molecular beam epitaxy

Nanotechnology, 2008-07, Vol.19 (27), p.275605-275605 (4)

2008

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Scanning precession electron diffraction data analysis approaches for phase mapping of precipitates in aluminium alloys

Ultramicroscopy, 2024-01, Vol.255, p.113861-113861, Article 113861

2024

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Nanocrystal segmentation in scanning precession electron diffraction data

Journal of microscopy (Oxford), 2020-09, Vol.279 (3), p.158-167

2020

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Radial composition variations in the shells of GaAs AlGaAs core-shell nanowires

Journal of physics. Conference series, 2015-10, Vol.644 (1), p.12007

2015

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In-situ electrical and structural characterization of individual GaAs nanowires

Journal of physics. Conference series, 2014-01, Vol.522 (1), p.12080-4

2014

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New avenues for residual stress analysis in ultrathin atomic layer deposited free-standing membranes through release of micro-cantilevers

Heliyon, 2024-02, Vol.10 (4), p.e26420-e26420, Article e26420

2024

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Determination of GaAs zinc blende/wurtzite band offsets utilizing GaAs nanowires with an axial GaAsSb insert

Journal of applied physics, 2017-12, Vol.122 (24)

2017

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Micro-photoluminescence study of single GaAsSb/GaAs radial and axial heterostructured core-shell nanowires

IOP conference series. Materials Science and Engineering, 2009-11, Vol.6 (1), p.012001-012001

2009

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Atomic resolution imaging of beryl: an investigation of the nano‐channel occupation

Journal of microscopy (Oxford), 2017-02, Vol.265 (2), p.245-250

2017

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In-situ observations of dislocation recovery and low angle boundary formation in deformed aluminium

Journal of physics. Conference series, 2019-08, Vol.1270 (1), p.12010

2019

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Anodic bonding

International materials reviews, 2006-10, Vol.51 (5), p.273-311

2006

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Effect of V/III ratio on the structural and optical properties of self-catalysed GaAs nanowires

Nanotechnology, 2016-11, Vol.27 (44), p.445711-445711

2016

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Compositional characterization of GaAs/GaAsSb nanowires by quantitative HAADF-STEM

Micron (Oxford, England : 1993), 2013-01, Vol.44, p.254-260

2013

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Position-Controlled Uniform GaAs Nanowires on Silicon using Nanoimprint Lithography

Atomic-scale 3D imaging of individual dopant atoms in an oxide semiconductor

The effect of Cu on precipitation in Al-Mg-Si alloys

Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires

Compositional analysis of GaAs/AlGaAs heterostructures using quantitative scanning transmission electron microscopy

Controlling crystal phases in GaAs nanowires grown by Au-assisted molecular beam epitaxy

Evaluating focused ion beam patterning for position-controlled nanowire growth using computer vision

Processing and indexing of electron backscatter patterns using open-source software

Characterization of ferroelectric domain walls by scanning electron microscopy

The effects of Sb concentration variation on the optical properties of GaAsSb GaAs heterostructured nanowires

Correlated micro-photoluminescence and electron microscopy study of a heterostructured semiconductor nanowire

Moiré fringes in conductive atomic force microscopy

Zinc blende GaAsSb nanowires grown by molecular beam epitaxy

Scanning precession electron diffraction data analysis approaches for phase mapping of precipitates in aluminium alloys

Nanocrystal segmentation in scanning precession electron diffraction data

Radial composition variations in the shells of GaAs AlGaAs core-shell nanowires

In-situ electrical and structural characterization of individual GaAs nanowires

New avenues for residual stress analysis in ultrathin atomic layer deposited free-standing membranes through release of micro-cantilevers

Determination of GaAs zinc blende/wurtzite band offsets utilizing GaAs nanowires with an axial GaAsSb insert

Micro-photoluminescence study of single GaAsSb/GaAs radial and axial heterostructured core-shell nanowires

Atomic resolution imaging of beryl: an investigation of the nano‐channel occupation

In-situ observations of dislocation recovery and low angle boundary formation in deformed aluminium

Anodic bonding

Effect of V/III ratio on the structural and optical properties of self-catalysed GaAs nanowires

Compositional characterization of GaAs/GaAsSb nanowires by quantitative HAADF-STEM

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