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Electronic structure and spectrum of UO22+ and UO2Cl42

The Journal of chemical physics, 2005-11, Vol.123 (20)

2005

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Effect of porogen residue on electrical characteristics of ultra low- k materials

Microelectronic engineering, 2011-06, Vol.88 (6), p.990-993

2011

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Effect of UV wavelength on the hardening process of porogen-containing and porogen-free ultralow-k plasma-enhanced chemical vapor deposition dielectrics

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-05, Vol.29 (3)

2011

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Influence of porosity on electrical properties of low-k dielectrics

Microelectronic engineering, 2012-04, Vol.92, p.59-61

2012

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Evaluations of intrinsic time dependent dielectric breakdown of dielectric copper diffusion barriers

Thin solid films, 2011-10, Vol.520 (1), p.662-666

2011

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Influence of the ion bombardment of O2 plasmas on low-k materials

Thin solid films, 2011-10, Vol.520 (1), p.464-468

2011

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Influence of the UV Cure on Advanced Plasma Enhanced Chemical Vapour Deposition Low-$k$ Materials

Japanese Journal of Applied Physics, 2011-05, Vol.50 (5), p.05EB05-05EB05-5

2011

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Dielectric reliability of 70nm pitch air-gap interconnect structures

Microelectronic engineering, 2011-07, Vol.88 (7), p.1618-1622

2011

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Interface charge trapping induced flatband voltage shift during plasma-enhanced atomic layer deposition in through silicon via

Journal of applied physics, 2017-12, Vol.122 (24)

2017

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Hydrogen outgassing induced liner/barrier reliability degradation in through silicon via's

Applied physics letters, 2014-04, Vol.104 (14), p.142906

2014

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Impact of wavelength of UV light and UV cure time on chemical and mechanical properties of PECVD deposited porous ultra low-k films

Microelectronic engineering, 2013-07, Vol.107, p.134-137

2013

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Influence of the ion bombardment of O 2 plasmas on low-k materials

Thin solid films, 2011-10, Vol.520 (1), p.464-468

2011

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Scalability of RuTiN barriers deposited by plasma-enhanced atomic layer deposition for advanced interconnects

Microelectronic engineering, 2014-05, Vol.120, p.235-239

2014

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Reliability challenges for barrier/liner system in high aspect ratio through silicon vias

Microelectronics and reliability, 2014-09, Vol.54 (9-10), p.1949-1952

2014

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Electronic structure and spectrum of UO2 2+ and UO2Cl4 2

The Journal of chemical physics, 2005-11, Vol.123 (20), p.204309-204309

2005

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Electronic structure and spectrum of U O 2 2 + and U O 2 Cl 4 2

The Journal of chemical physics, 2005-11, Vol.123 (20), p.204309-204309-10

2005

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Study of metal barrier deposition-induced damage to porous low- k materials

Microelectronic engineering, 2011-09, Vol.88 (9), p.3030-3034

2011

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Electronic spectra of uranyl chloride complexes in acetone : a CASSCF/CASPT2 investigation

Physical chemistry chemical physics : PCCP, 2006-01, Vol.8 (37), p.4311-4319

2006

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Low-k a-SiCO:H films as diffusion barriers for advanced interconnects

Microelectronic engineering, 2014-05, Vol.120, p.221-224

2014

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Dielectric reliability of 70 nm pitch air-gap interconnect structures

Microelectronic engineering, 2011-07, Vol.88 (7), p.1618-1622

2011

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Lanthanide(III)-Induced Conversion of 12-Metallacrown-4 to 5-Metallacrown-5 Complexes in Solution

European Journal of Inorganic Chemistry, 2005-08, Vol.2005 (16), p.3303-3310

2005

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Electronic spectrum of UO2(2+) and [UO2Cl4]2- calculated with time-dependent density functional theory

The Journal of chemical physics, 2007-05, Vol.126 (19), p.194311-194311

2007

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Electronic spectrum of UO22+ and [UO2Cl4]2− calculated with time-dependent density functional theory

The Journal of chemical physics, 2007-05, Vol.126 (19)

2007

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Electronic spectrum of U O 2 2 + and [ U O 2 Cl 4 ] 2 − calculated with time-dependent density functional theory

The Journal of chemical physics, 2007-05, Vol.126 (19), p.194311-194311-8

2007

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Influence of the UV Cure on Advanced Plasma Enhanced Chemical Vapour Deposition Low- k Materials

Japanese Journal of Applied Physics, 2011-05, Vol.50 (5S1), p.5

2011

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Electronic structure and spectrum of UO22+ and UO2Cl42

Effect of porogen residue on electrical characteristics of ultra low- k materials

Effect of UV wavelength on the hardening process of porogen-containing and porogen-free ultralow-k plasma-enhanced chemical vapor deposition dielectrics

Influence of porosity on electrical properties of low-k dielectrics

Evaluations of intrinsic time dependent dielectric breakdown of dielectric copper diffusion barriers

Influence of the ion bombardment of O2 plasmas on low-k materials

Influence of the UV Cure on Advanced Plasma Enhanced Chemical Vapour Deposition Low-$k$ Materials

Dielectric reliability of 70nm pitch air-gap interconnect structures

Interface charge trapping induced flatband voltage shift during plasma-enhanced atomic layer deposition in through silicon via

Hydrogen outgassing induced liner/barrier reliability degradation in through silicon via's

Impact of wavelength of UV light and UV cure time on chemical and mechanical properties of PECVD deposited porous ultra low-k films

Influence of the ion bombardment of O 2 plasmas on low-k materials

Scalability of RuTiN barriers deposited by plasma-enhanced atomic layer deposition for advanced interconnects

Reliability challenges for barrier/liner system in high aspect ratio through silicon vias

Electronic structure and spectrum of UO2 2+ and UO2Cl4 2

Electronic structure and spectrum of U O 2 2 + and U O 2 Cl 4 2

Study of metal barrier deposition-induced damage to porous low- k materials

Electronic spectra of uranyl chloride complexes in acetone : a CASSCF/CASPT2 investigation

Low-k a-SiCO:H films as diffusion barriers for advanced interconnects

Dielectric reliability of 70 nm pitch air-gap interconnect structures

Lanthanide(III)-Induced Conversion of 12-Metallacrown-4 to 5-Metallacrown-5 Complexes in Solution

Electronic spectrum of UO2(2+) and [UO2Cl4]2- calculated with time-dependent density functional theory

Electronic spectrum of UO22+ and [UO2Cl4]2− calculated with time-dependent density functional theory

Electronic spectrum of U O 2 2 + and [ U O 2 Cl 4 ] 2 − calculated with time-dependent density functional theory

Influence of the UV Cure on Advanced Plasma Enhanced Chemical Vapour Deposition Low- k Materials

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