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Optical and structural properties of copper oxide thin films grown by oxidation of metal layers

Thin solid films, 2006-12, Vol.515 (4), p.2428-2432

2006

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Picosecond and nanosecond laser annealing and simulation of amorphous silicon thin films for solar cell applications

Journal of applied physics, 2014-01, Vol.115 (4)

2014

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FTIR characterization of light emitting Si-rich nitride films prepared by low pressure chemical vapor deposition

Surface & coatings technology, 2007-09, Vol.201 (22), p.9359-9364

2007

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Deposition and characterization of copper oxide thin films

Journal of physics. Conference series, 2005-01, Vol.10 (1), p.182-185

2005

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Process study and the lithographic performance of commercially available silsesquioxane based electron sensitive resist Medusa 82

Micro and Nano Engineering, 2020-08, Vol.8, p.100065, Article 100065

2020

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Thermally activated conduction mechanisms in Silicon Nitride MIS structures

Thin solid films, 2010-02, Vol.518 (9), p.2357-2360

2010

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Efficient infrared emission from patterned thin metal films on a Si photonic crystal

Physica status solidi. A, Applications and materials science, 2008-11, Vol.205 (11), p.2581-2584

2008

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Oxide–nitride–oxide dielectric stacks with Si nanoparticles obtained by low-energy ion beam synthesis

Nanotechnology, 2007-05, Vol.18 (21), p.215204-215204 (7)

2007

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Thermodynamic study and characterization of low pressure chemically vapor deposited silicon oxynitride films from tetraethylorthosilicate, dichlorosilane and ammonia gas mixtures

Thin solid films, 2003-04, Vol.429 (1), p.77-83

2003

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Efficient infrared emission from periodically patterned thin metal films on a Si photonic crystal

Microelectronic engineering, 2008-05, Vol.85 (5-6), p.1112-1115

2008

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Oxide-nitride-oxide memory stacks formed by low-energy Si ion implantation into nitride and wet oxidation

Microelectronic engineering, 2007-09, Vol.84 (9), p.1986-1989

2007

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High-density plasma silicon oxide thin films grown at room-temperature

Microelectronic engineering, 2008-05, Vol.85 (5-6), p.1245-1247

2008

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Electrical stressing effects in solid-phase crystallized polysilicon thin film transistors

Semiconductor science and technology, 2002-06, Vol.17 (6), p.515-521

2002

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Simulation of FTIR reflection spectra in non normal incidence

Journal of physics. Conference series, 2005-01, Vol.10 (1), p.194-197

2005

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Thermodynamic study, compositional and electrical characterization of LPCVD SiO2 films grown from TEOS/N2O mixtures

Microelectronics and reliability, 1998-02, Vol.38 (2), p.265-269

1998

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Low pressure chemical vapor deposition from TEOS-NH3 mixtures : thermochemical study of the process considering kinetic data

Microelectronics and reliability, 1999-02, Vol.39 (2), p.303-309

1999

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Optical characterization of Si-rich silicon nitride films prepared by low pressure chemical vapor deposition

Microelectronics and reliability, 2007-04, Vol.47 (4), p.794-797

2007

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Nonconservative Ostwald ripening of a dislocation loop layer under inert nitrogen-rich SiO2∕Si interfaces

Journal of applied physics, 2006-05, Vol.99 (10)

2006

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Optical dispersion analysis within the IR range of thermally grown and TEOS deposited SiO2 films

Microelectronics and reliability, 1999-02, Vol.39 (2), p.285-289

1999

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Nonconservative Ostwald ripening of a dislocation loop layer under inert nitrogen-rich Si O 2 ∕ Si interfaces

Journal of applied physics, 2006-05, Vol.99 (10), p.103507-103507-9

2006

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Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks

Applied physics letters, 2007-06, Vol.90 (26)

2007

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Influence of the annealing temperature on the IR properties of SiO2 films grown from SiH4 + O2

Microelectronics and reliability, 2005, Vol.45 (5-6), p.986-989

2005

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Laser annealing and simulation of a:Si thin films for solar cell applications

CLEO: 2013, 2013, p.1-2

2013

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IEEE_Xplore

Wet oxidation of nitride layer implanted with low-energy Si ionsfor improved oxide-nitride-oxide memory stacks

Applied physics letters, 2007-06, Vol.90 (26), p.263513-263513-3

2007

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Correlation between infrared transmission spectra and the interface trap density of SiO2 films

Microelectronics and reliability, 2007-04, Vol.47 (4-5), p.834-837

2007

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Optical and structural properties of copper oxide thin films grown by oxidation of metal layers

Picosecond and nanosecond laser annealing and simulation of amorphous silicon thin films for solar cell applications

FTIR characterization of light emitting Si-rich nitride films prepared by low pressure chemical vapor deposition

Deposition and characterization of copper oxide thin films

Process study and the lithographic performance of commercially available silsesquioxane based electron sensitive resist Medusa 82

Thermally activated conduction mechanisms in Silicon Nitride MIS structures

Efficient infrared emission from patterned thin metal films on a Si photonic crystal

Oxide–nitride–oxide dielectric stacks with Si nanoparticles obtained by low-energy ion beam synthesis

Thermodynamic study and characterization of low pressure chemically vapor deposited silicon oxynitride films from tetraethylorthosilicate, dichlorosilane and ammonia gas mixtures

Efficient infrared emission from periodically patterned thin metal films on a Si photonic crystal

Oxide-nitride-oxide memory stacks formed by low-energy Si ion implantation into nitride and wet oxidation

High-density plasma silicon oxide thin films grown at room-temperature

Electrical stressing effects in solid-phase crystallized polysilicon thin film transistors

Simulation of FTIR reflection spectra in non normal incidence

Thermodynamic study, compositional and electrical characterization of LPCVD SiO2 films grown from TEOS/N2O mixtures

Low pressure chemical vapor deposition from TEOS-NH3 mixtures : thermochemical study of the process considering kinetic data

Optical characterization of Si-rich silicon nitride films prepared by low pressure chemical vapor deposition

Nonconservative Ostwald ripening of a dislocation loop layer under inert nitrogen-rich SiO2∕Si interfaces

Optical dispersion analysis within the IR range of thermally grown and TEOS deposited SiO2 films

Nonconservative Ostwald ripening of a dislocation loop layer under inert nitrogen-rich Si O 2 ∕ Si interfaces

Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks

Influence of the annealing temperature on the IR properties of SiO2 films grown from SiH4 + O2

Laser annealing and simulation of a:Si thin films for solar cell applications

Wet oxidation of nitride layer implanted with low-energy Si ionsfor improved oxide-nitride-oxide memory stacks

Correlation between infrared transmission spectra and the interface trap density of SiO2 films

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