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The Dynamic Interplay Between Puberty and Structural Brain Development as a Predictor of Mental Health Difficulties in Adolescence: A Systematic Review

Biological psychiatry (1969), 2024-10, Vol.96 (7), p.585-603

2024

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Acquisition Duration in Resting-State Arterial Spin Labeling. How Long Is Enough?

Frontiers in neuroscience, 2020-07, Vol.14, p.598

2020

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Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition

Surface & coatings technology, 2018-08, Vol.347, p.181-190

2018

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High capacitance density of 185 nF/mm2 achieved in three-dimensional MIM structures using TiO2 as a dielectric

Applied physics letters, 2017-06, Vol.110 (24)

2017

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Impedance and electric modulus study of amorphous TiTaO thin films: highlight of the interphase effect

Journal of physics. D, Applied physics, 2013-02, Vol.46 (6), p.65308-1-7

2013

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Multidomain spectral method for the Gauss hypergeometric function

Numerical algorithms, 2020-05, Vol.84 (1), p.1-35

2020

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Understanding the mechanisms of interfacial reactions during TiO 2 layer growth on RuO 2 by atomic layer deposition with O 2 plasma or H 2 O as oxygen source

Journal of applied physics, 2016-08, Vol.120 (8)

2016

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Evolution of TiN oxidation depending on the film’s temperature at vacuum break

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2016, Vol.34

2016

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Hydrogen passivation of silicium/silicium oxide interface by atomic layer deposited Hafnium Oxide and impact of silicon oxide underlayer

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2018, Vol.36 (1A116)

2018

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Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO 2 thin films grown by the atomic layer deposition technique

Journal of applied physics, 2016-06, Vol.119 (24)

2016

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On the mechanisms of cation injection in conducting bridge memories: The case of HfO 2 in contact with noble metal anodes (Au, Cu, Ag)

Journal of applied physics, 2016-03, Vol.119 (11)

2016

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Dielectric relaxation in hafnium oxide: A study of transient currents and admittance spectroscopy in HfO2 metal-insulator-metal devices

Journal of applied physics, 2011-11, Vol.110 (10)

2011

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Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2014-01, Vol.32 (1)

2014

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Differences between direct current and alternating current capacitance nonlinearities in high-k dielectrics and their relation to hopping conduction

Journal of applied physics, 2014-08, Vol.116 (8)

2014

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Stress-induced leakage current and trap generation in HfO2 thin films

Journal of applied physics, 2012-01, Vol.112 (7)

2012

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Control of carbon content in amorphous GeTe films deposited by plasma enhanced chemical vapor deposition (PE-MOCVD) for phase-change random access memory applications

Journal of physics. D, Applied physics, 2015-07, Vol.48 (26), p.1-10

2015

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Modeling of non-linearities in the capacitance-voltage characteristics of high k metal-insulator-metal capacitors

Applied physics letters, 2007, Vol.90

2007

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Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 by Angle Resolved XPS and C-V for advanced CMOS

Applied surface science, 2014-06, Vol.303

2014

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Structural and dielectric characterization of sputtered Tantalum Titanium Oxide thin films for high temperature capacitor applications

Thin solid films, 2016-05, Vol.606, p.127-132

2016

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Measurement of Multijet Production in ep Collisions at High Q^2 and Determination of the Strong Coupling alpha_s

The European physical journal. C, Particles and fields, 2015, Vol.75 (2)

2015

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Evidence of Germanium precipitation in phase-change Ge1−xTex thin films by Raman scattering

Applied physics letters, 2009-07, Vol.95 (3), p.31908

2009

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Electrode oxygen affinity influence on high k MIM capacitors

Applied physics letters, 2010, Vol.96

2010

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Metal-Insulator-Metal Devices with High-K Dielectric for Nonvolatile or Dynamic Random Access Memories

ACM transactions on embedded computing systems, 2015, Vol.67 (issue 1), p.99-110

2015

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Frequency Effect on Voltage Linearity of ZrO2-Based RF Metal-Insulator-Metal Capacitors

IEEE electron device letters, 2010-02, Vol.31 (2), p.114-116

2010

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Experimental evaluation of the forming process of virgin HfO2 memory cells by capacitance-voltage measurements

Physica status solidi. PSS-RRL. Rapid research letters, 2014-07, Vol.8 (7), p.634-638

2014

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The Dynamic Interplay Between Puberty and Structural Brain Development as a Predictor of Mental Health Difficulties in Adolescence: A Systematic Review

Acquisition Duration in Resting-State Arterial Spin Labeling. How Long Is Enough?

Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition

High capacitance density of 185 nF/mm2 achieved in three-dimensional MIM structures using TiO2 as a dielectric

Impedance and electric modulus study of amorphous TiTaO thin films: highlight of the interphase effect

Multidomain spectral method for the Gauss hypergeometric function

Understanding the mechanisms of interfacial reactions during TiO 2 layer growth on RuO 2 by atomic layer deposition with O 2 plasma or H 2 O as oxygen source

Evolution of TiN oxidation depending on the film’s temperature at vacuum break

Hydrogen passivation of silicium/silicium oxide interface by atomic layer deposited Hafnium Oxide and impact of silicon oxide underlayer

Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO 2 thin films grown by the atomic layer deposition technique

On the mechanisms of cation injection in conducting bridge memories: The case of HfO 2 in contact with noble metal anodes (Au, Cu, Ag)

Dielectric relaxation in hafnium oxide: A study of transient currents and admittance spectroscopy in HfO2 metal-insulator-metal devices

Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode

Differences between direct current and alternating current capacitance nonlinearities in high-k dielectrics and their relation to hopping conduction

Stress-induced leakage current and trap generation in HfO2 thin films

Control of carbon content in amorphous GeTe films deposited by plasma enhanced chemical vapor deposition (PE-MOCVD) for phase-change random access memory applications

Modeling of non-linearities in the capacitance-voltage characteristics of high k metal-insulator-metal capacitors

Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 by Angle Resolved XPS and C-V for advanced CMOS

Structural and dielectric characterization of sputtered Tantalum Titanium Oxide thin films for high temperature capacitor applications

Measurement of Multijet Production in ep Collisions at High Q^2 and Determination of the Strong Coupling alpha_s

Evidence of Germanium precipitation in phase-change Ge1−xTex thin films by Raman scattering

Electrode oxygen affinity influence on high k MIM capacitors

Metal-Insulator-Metal Devices with High-K Dielectric for Nonvolatile or Dynamic Random Access Memories

Frequency Effect on Voltage Linearity of ZrO2-Based RF Metal-Insulator-Metal Capacitors

Experimental evaluation of the forming process of virgin HfO2 memory cells by capacitance-voltage measurements

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