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Acquisition Duration in Resting-State Arterial Spin Labeling. How Long Is Enough?

Frontiers in neuroscience, 2020-07, Vol.14, p.598-598

2020

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The Dynamic Interplay between Puberty and Structural Brain Development as a Predictor of Mental Health Difficulties in Adolescence: a systematic review

Biological psychiatry (1969), 2024-06

2024

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Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition

Surface & coatings technology, 2018-08, Vol.347, p.181-190

2018

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High capacitance density of 185 nF/mm2 achieved in three-dimensional MIM structures using TiO2 as a dielectric

Applied physics letters, 2017-06, Vol.110 (24)

2017

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Impedance and electric modulus study of amorphous TiTaO thin films: highlight of the interphase effect

Journal of physics. D, Applied physics, 2013-02, Vol.46 (6), p.65308-1-7

2013

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Multidomain spectral method for the Gauss hypergeometric function

Numerical algorithms, 2020-05, Vol.84 (1), p.1-35

2020

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Evolution of TiN oxidation depending on the film’s temperature at vacuum break

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2016, Vol.34

2016

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Understanding the mechanisms of interfacial reactions during TiO 2 layer growth on RuO 2 by atomic layer deposition with O 2 plasma or H 2 O as oxygen source

Journal of applied physics, 2016-08, Vol.120 (8)

2016

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Hydrogen passivation of silicium/silicium oxide interface by atomic layer deposited Hafnium Oxide and impact of silicon oxide underlayer

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2018, Vol.36 (1A116)

2018

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Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO 2 thin films grown by the atomic layer deposition technique

Journal of applied physics, 2016-06, Vol.119 (24)

2016

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On the mechanisms of cation injection in conducting bridge memories: The case of HfO 2 in contact with noble metal anodes (Au, Cu, Ag)

Journal of applied physics, 2016-03, Vol.119 (11)

2016

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Dielectric relaxation in hafnium oxide: A study of transient currents and admittance spectroscopy in HfO2 metal-insulator-metal devices

Journal of applied physics, 2011-11, Vol.110 (10)

2011

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Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2014-01, Vol.32 (1)

2014

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Differences between direct current and alternating current capacitance nonlinearities in high-k dielectrics and their relation to hopping conduction

Journal of applied physics, 2014-08, Vol.116 (8)

2014

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Stress-induced leakage current and trap generation in HfO2 thin films

Journal of applied physics, 2012-01, Vol.112 (7)

2012

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Control of carbon content in amorphous GeTe films deposited by plasma enhanced chemical vapor deposition (PE-MOCVD) for phase-change random access memory applications

Journal of physics. D, Applied physics, 2015-07, Vol.48 (26), p.1-10

2015

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Modeling of non-linearities in the capacitance-voltage characteristics of high k metal-insulator-metal capacitors

Applied physics letters, 2007, Vol.90

2007

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Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 by Angle Resolved XPS and C-V for advanced CMOS

Applied surface science, 2014-06, Vol.303

2014

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Structural and dielectric characterization of sputtered Tantalum Titanium Oxide thin films for high temperature capacitor applications

Thin solid films, 2016-05, Vol.606, p.127-132

2016

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Measurement of Multijet Production in ep Collisions at High Q^2 and Determination of the Strong Coupling alpha_s

The European physical journal. C, Particles and fields, 2015, Vol.75 (2)

2015

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Evidence of Germanium precipitation in phase-change Ge1−xTex thin films by Raman scattering

Applied physics letters, 2009-07, Vol.95 (3), p.31908

2009

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Electrode oxygen affinity influence on high k MIM capacitors

Applied physics letters, 2010, Vol.96

2010

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Metal-Insulator-Metal Devices with High-K Dielectric for Nonvolatile or Dynamic Random Access Memories

ACM transactions on embedded computing systems, 2015, Vol.67 (issue 1), p.99-110

2015

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Frequency Effect on Voltage Linearity of ZrO2-Based RF Metal-Insulator-Metal Capacitors

IEEE electron device letters, 2010-02, Vol.31 (2), p.114-116

2010

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Experimental evaluation of the forming process of virgin HfO2 memory cells by capacitance-voltage measurements

Physica status solidi. PSS-RRL. Rapid research letters, 2014-07, Vol.8 (7), p.634-638

2014

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Acquisition Duration in Resting-State Arterial Spin Labeling. How Long Is Enough?

The Dynamic Interplay between Puberty and Structural Brain Development as a Predictor of Mental Health Difficulties in Adolescence: a systematic review

Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition

High capacitance density of 185 nF/mm2 achieved in three-dimensional MIM structures using TiO2 as a dielectric

Impedance and electric modulus study of amorphous TiTaO thin films: highlight of the interphase effect

Multidomain spectral method for the Gauss hypergeometric function

Evolution of TiN oxidation depending on the film’s temperature at vacuum break

Understanding the mechanisms of interfacial reactions during TiO 2 layer growth on RuO 2 by atomic layer deposition with O 2 plasma or H 2 O as oxygen source

Hydrogen passivation of silicium/silicium oxide interface by atomic layer deposited Hafnium Oxide and impact of silicon oxide underlayer

Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO 2 thin films grown by the atomic layer deposition technique

On the mechanisms of cation injection in conducting bridge memories: The case of HfO 2 in contact with noble metal anodes (Au, Cu, Ag)

Dielectric relaxation in hafnium oxide: A study of transient currents and admittance spectroscopy in HfO2 metal-insulator-metal devices

Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode

Differences between direct current and alternating current capacitance nonlinearities in high-k dielectrics and their relation to hopping conduction

Stress-induced leakage current and trap generation in HfO2 thin films

Control of carbon content in amorphous GeTe films deposited by plasma enhanced chemical vapor deposition (PE-MOCVD) for phase-change random access memory applications

Modeling of non-linearities in the capacitance-voltage characteristics of high k metal-insulator-metal capacitors

Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 by Angle Resolved XPS and C-V for advanced CMOS

Structural and dielectric characterization of sputtered Tantalum Titanium Oxide thin films for high temperature capacitor applications

Measurement of Multijet Production in ep Collisions at High Q^2 and Determination of the Strong Coupling alpha_s

Evidence of Germanium precipitation in phase-change Ge1−xTex thin films by Raman scattering

Electrode oxygen affinity influence on high k MIM capacitors

Metal-Insulator-Metal Devices with High-K Dielectric for Nonvolatile or Dynamic Random Access Memories

Frequency Effect on Voltage Linearity of ZrO2-Based RF Metal-Insulator-Metal Capacitors

Experimental evaluation of the forming process of virgin HfO2 memory cells by capacitance-voltage measurements

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