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Impact of post-ion implantation annealing on Se-hyperdoped Ge

Applied physics letters, 2024-07, Vol.125 (4)

2024

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Plasma-enhanced atomic layer deposited SiO2 enables positive thin film charge and surface recombination velocity of 1.3 cm/s on germanium

Applied physics letters, 2023-05, Vol.122 (19)

2023

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Bridging the gap between surface physics and photonics

Reports on progress in physics, 2024-04, Vol.87 (4), p.44501

2024

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Atomic Layer Deposition of Titanium Oxide-Based Films for Semiconductor Applications—Effects of Precursor and Operating Conditions

Materials, 2023-08, Vol.16 (16), p.5522

2023

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Efficient surface passivation of germanium nanostructures with 1% reflectance

Nanotechnology, 2023-08, Vol.34 (35), p.355201

2023

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Decreasing Interface Defect Densities via Silicon Oxide Passivation at Temperatures Below 450 °C

ACS applied materials & interfaces, 2020-10, Vol.12 (41), p.46933-46941

2020

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CMOS Image Sensor for Broad Spectral Range with >90% Quantum Efficiency

Small (Weinheim an der Bergstrasse, Germany), 2023-11, Vol.19 (47), p.e2304001-e2304001

2023

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Achieving surface recombination velocity below 10 cm/s in n-type germanium using ALD Al2O3

APL materials, 2021-11, Vol.9 (11), p.111113-111113-7

2021

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Main defect reactions behind phosphorus diffusion gettering of iron

Journal of applied physics, 2014-12, Vol.116 (24)

2014

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Excellent Responsivity and Low Dark Current Obtained With Metal-Assisted Chemical Etched Si Photodiode

IEEE sensors journal, 2023-04, Vol.23 (7), p.6750-6756

2023

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Increased surface recombination in crystalline silicon under light soaking due to Cu contamination

Solar energy materials and solar cells, 2021-10, Vol.232, p.111360, Article 111360

2021

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Quantifying the Impact of Al Deposition Method on Underlying Al2O3/Si Interface Quality

Physica status solidi. A, Applications and materials science, 2023-10, Vol.220 (20)

2023

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Tailoring Femtosecond‐Laser Processed Black Silicon for Reduced Carrier Recombination Combined with >95% Above‐Bandgap Absorption

Advanced photonics research, 2022-04, Vol.3 (4), p.n/a

2022

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Impact of black silicon on light‐ and elevated temperature‐induced degradation in industrial passivated emitter and rear cells

Progress in photovoltaics, 2019-11, Vol.27 (11), p.918-925

2019

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Effects of post oxidation of SiO2/Si interfaces in ultrahigh vacuum below 450 °C

Vacuum, 2022-08, Vol.202, p.111134, Article 111134

2022

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Electron Injection in Metal Assisted Chemical Etching as a Fundamental Mechanism for Electroless Electricity Generation

The journal of physical chemistry letters, 2022-06, Vol.13 (24), p.5648-5653

2022

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Impact of Pulse Duration on the Properties of Laser Hyperdoped Black Silicon

Advanced photonics research, 2024-06, Vol.5 (6), p.n/a

2024

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Black silicon back‐contact module with wide light acceptance angle

Progress in photovoltaics, 2020-03, Vol.28 (3), p.210-216

2020

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Cu gettering by phosphorus-doped emitters in p-type silicon: Effect on light-induced degradation

AIP advances, 2018-01, Vol.8 (1), p.015112-015112-7

2018

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Chemical Excitation of Silicon Photoconductors by Metal-Assisted Chemical Etching

Journal of physical chemistry. C, 2023-03, Vol.127 (8), p.4072-4078

2023

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Near-unity quantum efficiency of broadband black silicon photodiodes with an induced junction

Nature photonics, 2016-12, Vol.10 (12), p.777-781

2016

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Surface passivation of black silicon phosphorus emitters with atomic layer deposited SiO2/Al2O3 stacks

Energy procedia, 2017, Vol.124, p.307-312

2017

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Contactless analysis of surface passivation and charge transfer at the TiO2–Si interface

Physical chemistry chemical physics : PCCP, 2024-05, Vol.26 (21), p.15268-15276

2024

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Significant minority carrier lifetime improvement in red edge zone in n-type multicrystalline silicon

Solar energy materials and solar cells, 2013-07, Vol.114, p.54-58

2013

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MACE nano-texture process applicable for both single- and multi-crystalline diamond-wire sawn Si solar cells

Solar energy materials and solar cells, 2019-03, Vol.191, p.1-8

2019

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Impact of post-ion implantation annealing on Se-hyperdoped Ge

Plasma-enhanced atomic layer deposited SiO2 enables positive thin film charge and surface recombination velocity of 1.3 cm/s on germanium

Bridging the gap between surface physics and photonics

Atomic Layer Deposition of Titanium Oxide-Based Films for Semiconductor Applications—Effects of Precursor and Operating Conditions

Efficient surface passivation of germanium nanostructures with 1% reflectance

Decreasing Interface Defect Densities via Silicon Oxide Passivation at Temperatures Below 450 °C

CMOS Image Sensor for Broad Spectral Range with >90% Quantum Efficiency

Achieving surface recombination velocity below 10 cm/s in n-type germanium using ALD Al2O3

Main defect reactions behind phosphorus diffusion gettering of iron

Excellent Responsivity and Low Dark Current Obtained With Metal-Assisted Chemical Etched Si Photodiode

Increased surface recombination in crystalline silicon under light soaking due to Cu contamination

Quantifying the Impact of Al Deposition Method on Underlying Al2O3/Si Interface Quality

Tailoring Femtosecond‐Laser Processed Black Silicon for Reduced Carrier Recombination Combined with >95% Above‐Bandgap Absorption

Impact of black silicon on light‐ and elevated temperature‐induced degradation in industrial passivated emitter and rear cells

Effects of post oxidation of SiO2/Si interfaces in ultrahigh vacuum below 450 °C

Electron Injection in Metal Assisted Chemical Etching as a Fundamental Mechanism for Electroless Electricity Generation

Impact of Pulse Duration on the Properties of Laser Hyperdoped Black Silicon

Black silicon back‐contact module with wide light acceptance angle

Cu gettering by phosphorus-doped emitters in p-type silicon: Effect on light-induced degradation

Chemical Excitation of Silicon Photoconductors by Metal-Assisted Chemical Etching

Near-unity quantum efficiency of broadband black silicon photodiodes with an induced junction

Surface passivation of black silicon phosphorus emitters with atomic layer deposited SiO2/Al2O3 stacks

Contactless analysis of surface passivation and charge transfer at the TiO2–Si interface

Significant minority carrier lifetime improvement in red edge zone in n-type multicrystalline silicon

MACE nano-texture process applicable for both single- and multi-crystalline diamond-wire sawn Si solar cells

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