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On the Extraction of Accurate Non-Quasi-Static Transistor Models for E-Band Amplifier Design: Learning From the Past

IEEE transactions on microwave theory and techniques, 2024-09, Vol.72 (9), p.5039-5050

2024

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Auto‐encoder based hybrid machine learning model for microwave scaled GaAs pHEMT devices

International journal of RF and microwave computer-aided engineering, 2022-11, Vol.32 (11), p.n/a

2022

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Guest editorial for the special issue on modeling of μmWave and mmWave electronic devices for wireless systems: Connecting technologies to applications

International journal of numerical modelling, 2021-08, Vol.34 (5), p.n/a

2021

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Analysis of Efficiency-Limiting Factors Resulting from Transistor Current Source on Class-F and Inverse Class-F Power Amplifiers

IEICE transactions on electronics, 2022-10, Vol.E105.C (10), p.449-456, Article 2022MMI0003

2022

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Nonlinear-Embedding Design Methodology Oriented to LDMOS Power Amplifiers

IEEE transactions on power electronics, 2018-10, Vol.33 (10), p.8764-8774

2018

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High gain/bandwidth off-chip antenna loaded with metamaterial unit-cell impedance matching circuit for sub-terahertz near-field electronic systems

Scientific reports, 2022-10, Vol.12 (1), p.17893-17893, Article 17893

2022

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Physics‐informed neural network assisted automated design of power amplifier by user defined specifications

International journal of numerical modelling, 2024-05, Vol.37 (3), p.n/a

2024

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A New Calibration Technique of Electromagnetic Simulators for Accurate Analyses of Microwave Components on Epitaxial Wafers

IEEE access, 2024, Vol.12, p.72721-72729

2024

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A Thorough Evaluation of GaN HEMT Degradation under Realistic Power Amplifier Operation

Electronics (Basel), 2023-07, Vol.12 (13), p.2939

2023

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Broadband 3-D shared aperture high isolation nine-element antenna array for on-demand millimeter-wave 5G applications

Optik (Stuttgart), 2022-10, Vol.267, p.169708, Article 169708

2022

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A Systematic and Numerical Methodology for GaN HEMT Current-Gain Peak Analysis Using the Complex Lorentzian Function

IEEE microwave and wireless technology letters (Print), 2023-07, Vol.33 (7), p.1-4

2023

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A Load-Pull Characterization Technique Accounting for Harmonic Tuning

IEEE transactions on microwave theory and techniques, 2013-07, Vol.61 (7), p.2695-2704

2013

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Equivalent‐circuit extraction for gallium nitride electron devices: Direct versus optimization‐empowered approaches

International journal of numerical modelling, 2022-09, Vol.35 (5), p.n/a

2022

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High-periphery GaN HEMT modeling up to 65 GHz and 200 °C

Solid-state electronics, 2019-02, Vol.152, p.11-16

2019

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Characteristics study of heterojunction III-nitride/β-Ga2O3 nano-HEMT for THz applications

Engineering Research Express, 2024-06, Vol.6 (2)

2024

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Current‐gain in FETs beyond cut‐off frequency

Microwave and optical technology letters, 2018-12, Vol.60 (12), p.3023-3026

2018

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Device structural engineering and modelling of emerging III-nitride/β-Ga 2 O 3 nano-HEMT for high-power and THz electronics

Physica scripta, 2024-12, Vol.99 (12), p.125908

2024

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Device structural engineering and modelling of emerging III-nitride/β-Ga2O3 nano-HEMT for high-power and THz electronics

Physica scripta, 2024-11, Vol.99 (12)

2024

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Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design

IEEE transactions on microwave theory and techniques, 2010-04, Vol.58 (4), p.710-718

2010

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Advances in Ku-Band GaN Single Chip Front End for Space SARs: From System Specifications to Technology Selection

Electronics (Basel), 2022-10, Vol.11 (19), p.2998

2022

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Active Balun Design for Next-Generation Telecom Satellite Frequency Converters

IEEE microwave and wireless technology letters (Print), 2023-02, Vol.33 (2), p.1-4

2023

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Waveform engineering: State‐of‐the‐art and future trends (invited paper)

International journal of RF and microwave computer-aided engineering, 2017-01, Vol.27 (1), p.np-n/a

2017

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An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation

IEEE journal of the Electron Devices Society, 2021, Vol.9, p.378-386

2021

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Empowering GaN HEMT models: The gateway for power amplifier design

International journal of numerical modelling, 2017-01, Vol.30 (1), p.np-n/a

2017

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A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements

International journal of microwave and wireless technologies, 2019-03, Vol.11 (2), p.121-129

2019

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On the Extraction of Accurate Non-Quasi-Static Transistor Models for E-Band Amplifier Design: Learning From the Past

Auto‐encoder based hybrid machine learning model for microwave scaled GaAs pHEMT devices

Guest editorial for the special issue on modeling of μmWave and mmWave electronic devices for wireless systems: Connecting technologies to applications

Analysis of Efficiency-Limiting Factors Resulting from Transistor Current Source on Class-F and Inverse Class-F Power Amplifiers

Nonlinear-Embedding Design Methodology Oriented to LDMOS Power Amplifiers

High gain/bandwidth off-chip antenna loaded with metamaterial unit-cell impedance matching circuit for sub-terahertz near-field electronic systems

Physics‐informed neural network assisted automated design of power amplifier by user defined specifications

A New Calibration Technique of Electromagnetic Simulators for Accurate Analyses of Microwave Components on Epitaxial Wafers

A Thorough Evaluation of GaN HEMT Degradation under Realistic Power Amplifier Operation

Broadband 3-D shared aperture high isolation nine-element antenna array for on-demand millimeter-wave 5G applications

A Systematic and Numerical Methodology for GaN HEMT Current-Gain Peak Analysis Using the Complex Lorentzian Function

A Load-Pull Characterization Technique Accounting for Harmonic Tuning

Equivalent‐circuit extraction for gallium nitride electron devices: Direct versus optimization‐empowered approaches

High-periphery GaN HEMT modeling up to 65 GHz and 200 °C

Characteristics study of heterojunction III-nitride/β-Ga2O3 nano-HEMT for THz applications

Current‐gain in FETs beyond cut‐off frequency

Device structural engineering and modelling of emerging III-nitride/β-Ga 2 O 3 nano-HEMT for high-power and THz electronics

Device structural engineering and modelling of emerging III-nitride/β-Ga2O3 nano-HEMT for high-power and THz electronics

Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design

Advances in Ku-Band GaN Single Chip Front End for Space SARs: From System Specifications to Technology Selection

Active Balun Design for Next-Generation Telecom Satellite Frequency Converters

Waveform engineering: State‐of‐the‐art and future trends (invited paper)

An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation

Empowering GaN HEMT models: The gateway for power amplifier design

A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements

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