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Experiments on atomic-scale mechanisms of diffusion

Physical review letters, 1991-07, Vol.67 (2), p.212-215

1991

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Impurity migration during SIMS depth profiling

Surface and interface analysis, 1991-11, Vol.17 (12), p.875-887

1991

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An effective barrier against the interdiffusion of iron and zinc dopants in InP

Journal of applied physics, 1991-10, Vol.70 (7), p.3593-3599

1991

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Sharp boron spikes in silicon grown by fast gas switching chemical vapor deposition

Applied physics letters, 1991-02, Vol.58 (7), p.711-713

1991

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Co diffusion and precipitation in Si/SiGe heterostructures

Journal of applied physics, 1991-10, Vol.70 (8), p.4263-4267

1991

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Facts and artefacts in the characterization of Si/SiGe multilayers with SIMS

Surface and interface analysis, 1991-07, Vol.17 (8), p.556-566

1991

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Sharp phosphorus spikes in silicon grown by fast gas-switching chemical vapor deposition at reduced and atmospheric pressure

Applied physics letters, 1991-12, Vol.59 (25), p.3297-3299

1991

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Influence of surface topography on depth profiles obtained with secondary-ion mass spectrometry

Applied physics letters, 1990-11, Vol.57 (22), p.2371-2373

1990

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On some factors limiting depth resolution during SIMS profiling

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1992-04, Vol.67 (1), p.495-499

1992

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Sharp boron spikes in silicon grown at reduced and atmospheric pressure by fast-gas-switching CVD

Japanese Journal of Applied Physics, 1990-12, Vol.29 (12), p.L2307-L2310

1990

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Post-implantation as an aid in scale calibration for SIMS depth profiling

Surface and interface analysis, 1989-11, Vol.14 (11), p.781-786

1989

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Oxygen bleed-in during SIMS depth profiling: curse or blessing?

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1992-02, Vol.64 (1), p.626-631

1992

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Field-induced segregation effects during secondary-ion mass spectrometry depth profiling of Cu and Na implanted in silicon

Applied physics letters, 1989-05, Vol.54 (20), p.1981-1983

1989

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Ge Segregation during molecular beam epitaxial growth of Si1−xGex/Si layers

Thin solid films, 1989-12, Vol.183 (1-2), p.191-196

1989

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Tilted angle implantations of B, Al and Ga in single crystalline Si

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1989-06, Vol.42 (2), p.155-161

1989

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Heterojunction bipolar transistors with Si1−xGex base

Microelectronic engineering, 1992-09, Vol.19 (1-4), p.427-433

1992

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Heterojunction bipolar transistors with Si sub(1-x)Ge sub(x) base

Microelectronic engineering, 1992-01, Vol.19 (1-4), p.427-434

1992

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Heterojunction bipolar transistors with Si1-x Gex base

ESSDERC '92: 22nd European Solid State Device Research conference, 1992, p.427-433

1992

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Self-Assembled Nanoreactors

Chemical reviews, 2005-04, Vol.105 (4), p.1445-1490

2005

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Positional Assembly of Enzymes in Polymersome Nanoreactors for Cascade Reactions

Angewandte Chemie (International ed.), 2007-01, Vol.46 (39), p.7378-7382

2007

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Vesicles and Polymerized Vesicles from Thiophene-Containing Rod-Coil Block Copolymers

Angewandte Chemie (International ed.), 2003-02, Vol.42 (7), p.772-776

2003

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Enzymes containing porous polymersomes as nano reaction vessels for cascade reactions

Organic & biomolecular chemistry, 2008-01, Vol.6 (23), p.4315-4318

2008

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Positional Assembly of Enzymes in Polymersome Nanoreactors for Cascade Reactions

Angewandte Chemie, 2007-10, Vol.119 (39), p.7522-7526

2007

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Positional Assembly of Enzymes in Polymersome Nanoreactors for Cascade Reactions

Angewandte Chemie, 2007-10, Vol.119 (39), p.7522-7526

2007

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Cover Picture: Vesicles and Polymerized Vesicles from Thiophene-Containing Rod-Coil Block Copolymers (Angew. Chem. Int. Ed. 7/2003)

Angewandte Chemie (International ed.), 2003-02, Vol.42 (7), p.703-703

2003

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Experiments on atomic-scale mechanisms of diffusion

Impurity migration during SIMS depth profiling

An effective barrier against the interdiffusion of iron and zinc dopants in InP

Sharp boron spikes in silicon grown by fast gas switching chemical vapor deposition

Co diffusion and precipitation in Si/SiGe heterostructures

Facts and artefacts in the characterization of Si/SiGe multilayers with SIMS

Sharp phosphorus spikes in silicon grown by fast gas-switching chemical vapor deposition at reduced and atmospheric pressure

Influence of surface topography on depth profiles obtained with secondary-ion mass spectrometry

On some factors limiting depth resolution during SIMS profiling

Sharp boron spikes in silicon grown at reduced and atmospheric pressure by fast-gas-switching CVD

Post-implantation as an aid in scale calibration for SIMS depth profiling

Oxygen bleed-in during SIMS depth profiling: curse or blessing?

Field-induced segregation effects during secondary-ion mass spectrometry depth profiling of Cu and Na implanted in silicon

Ge Segregation during molecular beam epitaxial growth of Si1−xGex/Si layers

Tilted angle implantations of B, Al and Ga in single crystalline Si

Heterojunction bipolar transistors with Si1−xGex base

Heterojunction bipolar transistors with Si sub(1-x)Ge sub(x) base

Heterojunction bipolar transistors with Si1-x Gex base

Self-Assembled Nanoreactors

Positional Assembly of Enzymes in Polymersome Nanoreactors for Cascade Reactions

Vesicles and Polymerized Vesicles from Thiophene-Containing Rod-Coil Block Copolymers

Enzymes containing porous polymersomes as nano reaction vessels for cascade reactions

Positional Assembly of Enzymes in Polymersome Nanoreactors for Cascade Reactions

Positional Assembly of Enzymes in Polymersome Nanoreactors for Cascade Reactions

Cover Picture: Vesicles and Polymerized Vesicles from Thiophene-Containing Rod-Coil Block Copolymers (Angew. Chem. Int. Ed. 7/2003)

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