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Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal

Applied physics letters, 2010-09, Vol.97 (11)

2010

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Silicon Substrate Removal of GaN DHFETs for Enhanced (<1100 V) Breakdown Voltage

IEEE electron device letters, 2010-08, Vol.31 (8), p.851-853

2010

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Limitations of Field Plate Effect Due to the Silicon Substrate in AlGaN/GaN/AlGaN DHFETs

IEEE transactions on electron devices, 2010-12, Vol.57 (12), p.3333-3339

2010

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Electrically active defects at AlN/Si interface studied by DLTS and ESR

Physica status solidi. A, Applications and materials science, 2012-10, Vol.209 (10), p.1851-1856

2012

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Investigation of Light-Induced Deep-Level Defect Activation at the AlN/Si Interface

Applied physics express, 2011-09, Vol.4 (9), p.94101

2011

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High breakdown voltage in AlGaN/GaN/AlGaN double heterostructures grown on 4 inch Si substrates

Physica status solidi. C, 2009-06, Vol.6 (S2), p.S988-S991

2009

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Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2-μm Buffer Thickness by Local Substrate Removal

IEEE electron device letters, 2011, Vol.32 (1), p.30-32

2011

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A 96% Efficient High-Frequency DC-DC Converter Using E-Mode GaN DHFETs on Si

IEEE electron device letters, 2011-10, Vol.32 (10), p.1370-1372

2011

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AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance

Japanese Journal of Applied Physics, 2009-04, Vol.48 (4S), p.4

2009

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Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications

Microelectronics and reliability, 2013-09, Vol.53 (9-11), p.1444-1449

2013

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1900 V, 1.6 mΩ cm 2 AlN/GaN-on-Si power devices realized by local substrate removal

Applied physics express, 2014-03, Vol.7 (3), p.34103

2014

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GaN-on-Si for Power Technology

ECS transactions, 2013, Vol.50 (3), p.173-176

2013

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Experimental and simulation study of breakdown voltage enhancementof AlGaN/GaN heterostructures by Si substrate removal

Applied physics letters, 2010-09, Vol.97 (11), p.113501-113501-3

2010

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Limitations of Field Plate Effect Due to the Silicon Substrate in AIGaN/GaN/AIGaN DHFETs

IEEE transactions on electron devices, 2010, Vol.57 (12), p.3333-3339

2010

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Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2-[Formula Omitted] Buffer Thickness by Local Substrate Removal

IEEE electron device letters, 2011-01, Vol.32 (1), p.30

2011

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Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2- mu hbox m Buffer Thickness by Local Substrate Removal

IEEE electron device letters, 2011-01, Vol.32 (1), p.30-32

2011

Volltextzugriff (PDF)

Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2- \mu\hbox Buffer Thickness by Local Substrate Removal

IEEE electron device letters, 2011-01, Vol.32 (1), p.30-32

2011

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(Invited) GaN-on-Si For High-Voltage Applications

ECS transactions, 2011, Vol.41 (8), p.101-112

2011

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Significant enhancement of breakdown voltage for GaN DHFETs by Si substrate removal

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2216-2218

2011

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Excellent Stability of GaN-on-Si High Electron Mobility Transistors with 5 \mbox{$\mu$m} Gate--Drain Spacing Tested in Off-State at a Record Drain Voltage of 200 V and 200 \mbox{\circC}

Jpn J Appl Phys, 2010-04, Vol.49 (4), p.04DF07-04DF07-4

2010

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Excellent Stability of GaN-on-Si High Electron Mobility Transistors with 5 µm Gate–Drain Spacing Tested in Off-State at a Record Drain Voltage of 200 V and 200 °C

Japanese Journal of Applied Physics, 2010-04, Vol.49 (4S), p.4

2010

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Power Performance of AlGaN/GaN HEMT's Grown on 6″ Si Substrates

MRS proceedings, 2008, Vol.1068, Article 1068-C04-02

2008

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High temperature on- and off-state stress of GaN-on-Si HEMTs with in-situ Si3N4 cap layer

2010 IEEE International Reliability Physics Symposium, 2010, p.146-151

2010

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GaN-on-Si for Power Technology

Meeting abstracts (Electrochemical Society), 2012-06, Vol.MA2012-02 (30), p.2537-2537

2012

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GaN-on-Si for High-Voltage Applications

Meeting abstracts (Electrochemical Society), 2011-08, Vol.MA2011-02 (33), p.2173-2173

2011

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Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal

Silicon Substrate Removal of GaN DHFETs for Enhanced (<1100 V) Breakdown Voltage

Limitations of Field Plate Effect Due to the Silicon Substrate in AlGaN/GaN/AlGaN DHFETs

Electrically active defects at AlN/Si interface studied by DLTS and ESR

Investigation of Light-Induced Deep-Level Defect Activation at the AlN/Si Interface

High breakdown voltage in AlGaN/GaN/AlGaN double heterostructures grown on 4 inch Si substrates

Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2-μm Buffer Thickness by Local Substrate Removal

A 96% Efficient High-Frequency DC-DC Converter Using E-Mode GaN DHFETs on Si

AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance

Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications

1900 V, 1.6 mΩ cm 2 AlN/GaN-on-Si power devices realized by local substrate removal

GaN-on-Si for Power Technology

Experimental and simulation study of breakdown voltage enhancementof AlGaN/GaN heterostructures by Si substrate removal

Limitations of Field Plate Effect Due to the Silicon Substrate in AIGaN/GaN/AIGaN DHFETs

Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2-[Formula Omitted] Buffer Thickness by Local Substrate Removal

Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2- mu hbox m Buffer Thickness by Local Substrate Removal

Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2- \mu\hbox Buffer Thickness by Local Substrate Removal

(Invited) GaN-on-Si For High-Voltage Applications

Significant enhancement of breakdown voltage for GaN DHFETs by Si substrate removal

Excellent Stability of GaN-on-Si High Electron Mobility Transistors with 5 \mbox{$\mu$m} Gate--Drain Spacing Tested in Off-State at a Record Drain Voltage of 200 V and 200 \mbox{\circC}

Excellent Stability of GaN-on-Si High Electron Mobility Transistors with 5 µm Gate–Drain Spacing Tested in Off-State at a Record Drain Voltage of 200 V and 200 °C

Power Performance of AlGaN/GaN HEMT's Grown on 6″ Si Substrates

High temperature on- and off-state stress of GaN-on-Si HEMTs with in-situ Si3N4 cap layer

GaN-on-Si for Power Technology

GaN-on-Si for High-Voltage Applications

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