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The path to scalable quantum computing with silicon spin qubits

Nature nanotechnology, 2021-12, Vol.16 (12), p.1296-1298

Vinet, Maud

2021

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Single-electron operations in a foundry-fabricated array of quantum dots

Nature communications, 2020-12, Vol.11 (1), p.6399-6399, Article 6399

2020

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Gate-based high fidelity spin readout in a CMOS device

Nature nanotechnology, 2019-08, Vol.14 (8), p.737-741

2019

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Few-Electron Edge-State Quantum Dots in a Silicon Nanowire Field-Effect Transistor

Nano letters, 2014-04, Vol.14 (4), p.2094-2098

2014

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Investigation of tunnel field-effect transistors as a capacitor-less memory cell

Applied physics letters, 2014-03, Vol.104 (9)

2014

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Gate reflectometry in dense quantum dot arrays

New journal of physics, 2023-03, Vol.25 (3), p.33023

2023

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Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot

npj quantum information, 2018-02, Vol.4 (1), p.1-7, Article 6

2018

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Spin Readout of a CMOS Quantum Dot by Gate Reflectometry and Spin-Dependent Tunneling

PRX quantum, 2021-03, Vol.2 (1), p.010353, Article 010353

2021

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Spin Quintet in a Silicon Double Quantum Dot: Spin Blockade and Relaxation

Physical review. X, 2020-10, Vol.10 (4), p.041010, Article 041010

2020

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Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K

Applied physics letters, 2020-06, Vol.116 (24)

2020

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Comprehensive Evaluation of Junctionless and Inversion-Mode Nanowire MOSFETs Performance at High Temperatures

IEEE journal of the Electron Devices Society, 2024, Vol.12, p.682-691

2024

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High Temperature and Width Influence on the GIDL of Nanowire and Nanosheet SOI nMOSFETs

IEEE journal of the Electron Devices Society, 2023-01, Vol.11, p.1-1

2023

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Large Dispersive Interaction between a CMOS Double Quantum Dot and Microwave Photons

PRX quantum, 2021-05, Vol.2 (2), p.020315, Article 020315

2021

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Parity and Singlet-Triplet High-Fidelity Readout in a Silicon Double Quantum Dot at 0.5 K

PRX quantum, 2022-12, Vol.3 (4), p.040335, Article 040335

2022

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The future transistors

Nature (London), 2023-08, Vol.620 (7974), p.501-515

2023

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Few electron limit of n-type metal oxide semiconductor single electron transistors

Nanotechnology, 2012-06, Vol.23 (21), p.215204-215204

2012

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Non-symmetric Pauli spin blockade in a silicon double quantum dot

npj quantum information, 2024-03, Vol.10 (1), p.28-12, Article 28

2024

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Electrical manipulation of a single electron spin in CMOS using a micromagnet and spin-valley coupling

npj quantum information, 2023-10, Vol.9 (1), p.107-7, Article 107

2023

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Statistical and Electrical Modeling of FDSOI Four-Gate Qubit MOS Devices at Room Temperature

IEEE journal of the Electron Devices Society, 2021, Vol.9, p.582-590

2021

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Switching quantum transport in a three donors silicon fin-field effect transistor

Applied physics letters, 2011-12, Vol.99 (24), p.242102-242102-4

2011

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Ultra-thin dielectric insertions for contact resistivity lowering in advanced CMOS: Promises and challenges

Japanese Journal of Applied Physics, 2017-04, Vol.56 (4S), p.4-04CB02

2017

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Electrical Spin Driving by g-Matrix Modulation in Spin-Orbit Qubits

Physical review letters, 2018-03, Vol.120 (13), p.137702-137702, Article 137702

2018

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Integration of Low Temperature SiGe:B Raised Sources and Drains in p-Type FDSOI Field Effect Transistors

ECS transactions, 2016-08, Vol.75 (8), p.51-58

2016

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Development of a CMOS Route for Electron Pumps to Be Used in Quantum Metrology

Technologies (Basel), 2016-03, Vol.4 (1), p.10

2016

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Publisher Correction: The future transistors

Nature (London), 2023-09, Vol.621 (7979), p.E43-E43

2023

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The path to scalable quantum computing with silicon spin qubits

Single-electron operations in a foundry-fabricated array of quantum dots

Gate-based high fidelity spin readout in a CMOS device

Few-Electron Edge-State Quantum Dots in a Silicon Nanowire Field-Effect Transistor

Investigation of tunnel field-effect transistors as a capacitor-less memory cell

Gate reflectometry in dense quantum dot arrays

Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot

Spin Readout of a CMOS Quantum Dot by Gate Reflectometry and Spin-Dependent Tunneling

Spin Quintet in a Silicon Double Quantum Dot: Spin Blockade and Relaxation

Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K

Comprehensive Evaluation of Junctionless and Inversion-Mode Nanowire MOSFETs Performance at High Temperatures

High Temperature and Width Influence on the GIDL of Nanowire and Nanosheet SOI nMOSFETs

Large Dispersive Interaction between a CMOS Double Quantum Dot and Microwave Photons

Parity and Singlet-Triplet High-Fidelity Readout in a Silicon Double Quantum Dot at 0.5 K

The future transistors

Few electron limit of n-type metal oxide semiconductor single electron transistors

Non-symmetric Pauli spin blockade in a silicon double quantum dot

Electrical manipulation of a single electron spin in CMOS using a micromagnet and spin-valley coupling

Statistical and Electrical Modeling of FDSOI Four-Gate Qubit MOS Devices at Room Temperature

Switching quantum transport in a three donors silicon fin-field effect transistor

Ultra-thin dielectric insertions for contact resistivity lowering in advanced CMOS: Promises and challenges

Electrical Spin Driving by g-Matrix Modulation in Spin-Orbit Qubits

Integration of Low Temperature SiGe:B Raised Sources and Drains in p-Type FDSOI Field Effect Transistors

Development of a CMOS Route for Electron Pumps to Be Used in Quantum Metrology

Publisher Correction: The future transistors

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