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InP/GaInAsP guided-wave phase modulators based on carrier-induced effects: theory and experiment

Journal of lightwave technology, 1992-01, Vol.10 (1), p.63-70

1992

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Study on the reliability of an InP/InGaAsP integrated laser modulator

Microelectronics and reliability, 1996-11, Vol.36 (11-12), p.1919-1922

1996

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First digital optical switch based on InP/GaInAsP double heterostructure waveguides

Electronics letters, 1991-01, Vol.27 (9), p.699-700, Article 699

1991

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Stability evaluation of a ridge-integrated laser modulator based on a butt-coupling approach

IEEE photonics technology letters, 1996-09, Vol.8 (9), p.1136-1138

1996

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Monolithic integration of GaInAsP/InP carrier depletion directional couplers and GaInAs p-i-n detectors on semi-insulating InP

IEEE photonics technology letters, 1992-12, Vol.4 (12), p.1372-1374

1992

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Accurate determination of waveguide-fed p-i-n photodiode absorption

Journal of lightwave technology, 1992-10, Vol.10 (10), p.1409-1414

1992

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Electron-hole pair generation rate of a monolithic integrated waveguide/photodetector: application to the modeling of monolithic integrated waveguide/p-i-n photodiodes

Journal of lightwave technology, 1990-12, Vol.8 (12), p.1920-1931

1990

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Modelling of self-aligned total internal reflection waveguide mirrors : an interlaboratory comparison

Optical and quantum electronics, 1995-10, Vol.27 (10), p.935-942

1995

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Integration of detectors with GaInAsP/InP carrier depletion optical switches

Electronics letters, 1990, Vol.26 (21), p.1783-1784

1990

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Monolithic integration of a thin and short metal-semiconductor-metal photodetector with a GaAlAs optical inverted rib waveguide on a GaAs semi-insulating substrate

Applied physics letters, 1989, Vol.55 (19), p.1966-1968

1989

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Low-loss fiber-chip coupling by InGaAsP/InP thick waveguides for guided-wave photonic integrated circuits

IEEE photonics technology letters, 1994-11, Vol.6 (11), p.1347-1349

1994

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Monolithic integration for InP based photonic switching circuits

Journal of the European Optical Society. Part A, Pure and applied optics, 1995-07, Vol.4 (4), p.431-440

1995

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Low driving voltage or current digital optical switch on InP for multiwavelength system applications

Electronics letters, 1992-06, Vol.28 (12), p.1135-1137

1992

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Monolithic integration of a short-length GaInAs photoconductor with a GaAs/GaAlAs optical waveguide on a GaAs semi-insulating substrate

Applied physics letters, 1988-12, Vol.53 (25), p.2522-2524

1988

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Effects of absorbing layers on the propagation constants: A four layer model on desktop-computer applied to photodetectors monolithically integrated with optical waveguides

Optics communications, 1988-07, Vol.67 (4), p.266-270

1988

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Photodétecteurs en intégration monolithique sur guides optiques: modélisation et vérifications expérimentales

Annales des télécommunications, 1989-03, Vol.44 (3-4), p.149-154

1989

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2.5 Gbit/s unrepeatered transmission with directly modulated laser and without dispersion compensating fibre over 385 km (412 km with FEC) of pure silica core fibre

Electronics letters, 1996, Vol.32 (15), p.1383-1384

1996

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2.5 Gbit/s transmission over 1391 km of non-dispersion-shifted fibre using an integrated electroabsorption modulator/DFB laser module

Electronics letters, 1996, Vol.32 (10), p.909-910

1996

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Monolithic integration of photodetectors on optical waveguides - Simulation and experimental verification (Photodetecteurs en integration monolithique sur guides optiques - Modelisation et verifications experimentales)

Annales des télécommunications, 1989-03, Vol.44, p.149-154

1989

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Improved fabrication of 4 /spl times/ 4 polarisation insensitive switch matrices on InP by introduction of an etch stop layer

1993 (5th) International Conference on Indium Phosphide and Related Materials, 1993, p.84-87

1993

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InP/GaInAsP guided-wave phase modulators based on carrier-induced effects: theory and experiment

Study on the reliability of an InP/InGaAsP integrated laser modulator

First digital optical switch based on InP/GaInAsP double heterostructure waveguides

Stability evaluation of a ridge-integrated laser modulator based on a butt-coupling approach

Monolithic integration of GaInAsP/InP carrier depletion directional couplers and GaInAs p-i-n detectors on semi-insulating InP

Accurate determination of waveguide-fed p-i-n photodiode absorption

Electron-hole pair generation rate of a monolithic integrated waveguide/photodetector: application to the modeling of monolithic integrated waveguide/p-i-n photodiodes

Modelling of self-aligned total internal reflection waveguide mirrors : an interlaboratory comparison

Integration of detectors with GaInAsP/InP carrier depletion optical switches

Monolithic integration of a thin and short metal-semiconductor-metal photodetector with a GaAlAs optical inverted rib waveguide on a GaAs semi-insulating substrate

Low-loss fiber-chip coupling by InGaAsP/InP thick waveguides for guided-wave photonic integrated circuits

Monolithic integration for InP based photonic switching circuits

Low driving voltage or current digital optical switch on InP for multiwavelength system applications

Monolithic integration of a short-length GaInAs photoconductor with a GaAs/GaAlAs optical waveguide on a GaAs semi-insulating substrate

Effects of absorbing layers on the propagation constants: A four layer model on desktop-computer applied to photodetectors monolithically integrated with optical waveguides

Photodétecteurs en intégration monolithique sur guides optiques: modélisation et vérifications expérimentales

2.5 Gbit/s unrepeatered transmission with directly modulated laser and without dispersion compensating fibre over 385 km (412 km with FEC) of pure silica core fibre

2.5 Gbit/s transmission over 1391 km of non-dispersion-shifted fibre using an integrated electroabsorption modulator/DFB laser module

Monolithic integration of photodetectors on optical waveguides - Simulation and experimental verification (Photodetecteurs en integration monolithique sur guides optiques - Modelisation et verifications experimentales)

Improved fabrication of 4 /spl times/ 4 polarisation insensitive switch matrices on InP by introduction of an etch stop layer

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