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Effect of plasmon–phonon interaction on the infrared reflection spectra of MgxZn1-xO/Al2O3 structures

Journal of materials science. Materials in electronics, 2020-05, Vol.31 (10), p.7539-7546

2020

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Physics and Technology of Heterosystems with Films of Germanium and Germanium with Gallium

Journal of Nano- and Electronic Physics, 2019, Vol.11 (5), p.5029-5029-4

2019

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Features of ZnS-powder doping with a Mn impurity during synthesis and subsequent annealing

Semiconductors (Woodbury, N.Y.), 2013-05, Vol.47 (5), p.713-720

2013

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З’ясування умов збудження поверхневих поляритонів у кераміці Mg0,2Zn0,8O методом порушеного повного внутрішнього відбивання

Ukrainian journal of physics (Kiev), 2022-12, Vol.67 (8), p.611

2022

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The interaction of Mn-related centers with the centers of photosensitivity in doped ZnO materials

Journal of materials science. Materials in electronics, 2023-03, Vol.34 (7), p.646, Article 646

2023

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Investigation of undoped and Tb-doped ZnO films on Al2O3 substrate by infrared reflection method

Thin solid films, 2019-03, Vol.673, p.136-140

2019

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Formation of Cu-related emission centers under thermal doping of ZnS powders with CuCl and CuCl2

Journal of luminescence, 2015-09, Vol.165, p.94-98

2015

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Optical, structural and electrical characterization of pure ZnO films grown on p-type Si substrates by radiofrequency magnetron sputtering in different atmospheres

Semiconductor science and technology, 2020-09, Vol.35 (9), p.95034

2020

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Optical and Electrical Properties of Tb–ZnO/SiO2 Structure in the Infrared Spectral Interval

Ukrainian journal of physics (Kiev), 2019-06, Vol.64 (5), p.434

2019

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Enhancement of the photoluminescence in CdSe quantum dot–polyvinyl alcohol composite by light irradiation

Applied surface science, 2013-09, Vol.281, p.118-122

2013

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Depth redistribution of components of SiOx layers prepared by magnetron sputtering in the process of their decomposition

Thin solid films, 2007-06, Vol.515 (17), p.6749-6753

2007

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Peculiarities of specular infrared reflection spectra of ZnO-based ceramics

Semiconductor physics, quantum electronics, and optoelectronics, 2021-01, Vol.24 (4), p.390-398

2021

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Surface polaritons in optical-anisotropic MgxZn1-xO/6H-SiC structures

Functional Materials, 2020-01, Vol.27 (3)

2020

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Optical investigations of the influence of point defects on quantum dots in CdSe/ZnSe heterostructures

Journal of physics. Condensed matter, 2002-12, Vol.14 (48), p.13375-13380

2002

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Structure and light emission of Si-rich Al sub(2)O sub(3) and Si-rich-SiO sub(2) nanocomposites

Microelectronic engineering, 2014-08, Vol.125, p.62-67

2014

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Structure and light emission of Si-rich Al2O3 and Si-rich-SiO2 nanocomposites

Microelectronic engineering, 2014-08, Vol.125, p.62-67

2014

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Structural and Luminescent Properties of (Y,Cu)-Codoped Zirconia Nanopowders

ECS journal of solid state science and technology, 2015-01, Vol.4 (9), p.N103-N110

2015

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Role of paramagnetic defects in light emission processes in Y-doped ZrO 2 nanopowders

Materials research express, 2014-10, Vol.1 (4), p.45011

2014

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The structure of Si―SiO2 layers with high excess Si content prepared by magnetron sputtering

Thin solid films, 2009-07, Vol.517 (18), p.5468-5473

2009

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The structure of Si–SiO 2 layers with high excess Si content prepared by magnetron sputtering

Thin solid films, 2009, Vol.517 (18), p.5468-5473

2009

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Petro Ivanovych Baransky (to the 90-th anniversary of his birthday)

Ukrainian journal of physics (Kiev), 2015-12, Vol.60 (12), p.1268-1269

2015

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Effect of CdTe monolayer insertion on CdZnTe/ZnTe quantum well characteristics

Microelectronics, 2008-03, Vol.39 (3-4), p.418-422

2008

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Peculiarities of the thermal activation of carriers in CdSe/ZnSe QD structures

Journal of materials science. Materials in electronics, 2009, Vol.20 (Suppl 1), p.102-106

2009

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Depth redistribution of components of SiO x layers prepared by magnetron sputtering in the process of their decomposition

Thin solid films, 2007, Vol.515 (17), p.6749-6753

2007

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Structural and luminescent characteristics of macro porous silicon

Journal of materials science. Materials in electronics, 2009-01, Vol.20 (Suppl 1), p.226-229

2009

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Effect of plasmon–phonon interaction on the infrared reflection spectra of MgxZn1-xO/Al2O3 structures

Physics and Technology of Heterosystems with Films of Germanium and Germanium with Gallium

Features of ZnS-powder doping with a Mn impurity during synthesis and subsequent annealing

З’ясування умов збудження поверхневих поляритонів у кераміці Mg0,2Zn0,8O методом порушеного повного внутрішнього відбивання

The interaction of Mn-related centers with the centers of photosensitivity in doped ZnO materials

Investigation of undoped and Tb-doped ZnO films on Al2O3 substrate by infrared reflection method

Formation of Cu-related emission centers under thermal doping of ZnS powders with CuCl and CuCl2

Optical, structural and electrical characterization of pure ZnO films grown on p-type Si substrates by radiofrequency magnetron sputtering in different atmospheres

Optical and Electrical Properties of Tb–ZnO/SiO2 Structure in the Infrared Spectral Interval

Enhancement of the photoluminescence in CdSe quantum dot–polyvinyl alcohol composite by light irradiation

Depth redistribution of components of SiOx layers prepared by magnetron sputtering in the process of their decomposition

Peculiarities of specular infrared reflection spectra of ZnO-based ceramics

Surface polaritons in optical-anisotropic MgxZn1-xO/6H-SiC structures

Optical investigations of the influence of point defects on quantum dots in CdSe/ZnSe heterostructures

Structure and light emission of Si-rich Al sub(2)O sub(3) and Si-rich-SiO sub(2) nanocomposites

Structure and light emission of Si-rich Al2O3 and Si-rich-SiO2 nanocomposites

Structural and Luminescent Properties of (Y,Cu)-Codoped Zirconia Nanopowders

Role of paramagnetic defects in light emission processes in Y-doped ZrO 2 nanopowders

The structure of Si―SiO2 layers with high excess Si content prepared by magnetron sputtering

The structure of Si–SiO 2 layers with high excess Si content prepared by magnetron sputtering

Petro Ivanovych Baransky (to the 90-th anniversary of his birthday)

Effect of CdTe monolayer insertion on CdZnTe/ZnTe quantum well characteristics

Peculiarities of the thermal activation of carriers in CdSe/ZnSe QD structures

Depth redistribution of components of SiO x layers prepared by magnetron sputtering in the process of their decomposition

Structural and luminescent characteristics of macro porous silicon

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