UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 447

Sortiert nach

The Illusion of Control: Project Data, Computer Algorithms and Human Intuition for Project Management and Control

Vanhoucke, Mario

1, 2023

Volltextzugriff (PDF)

A new analytical model for the thermal resistance of deep-trench bipolar transistors

IEEE transactions on electron devices, 2006-06, Vol.53 (6), p.1379-1388

2006

Volltextzugriff (PDF)

Revised method for extraction of the thermal resistance applied to bulk and SOI SiGe HBTs

IEEE electron device letters, 2004-03, Vol.25 (3), p.150-152

2004

Volltextzugriff (PDF)

RF technology optimization by a fast method for linearity determination

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2015, p.182-185

2015

Volltextzugriff (PDF)

Simultaneous extraction of the base and thermal resistances of bipolar transistors

IEEE transactions on electron devices, 2005-08, Vol.52 (8), p.1887-1892

2005

Volltextzugriff (PDF)

RF reliability of short channel NMOS devices

2009 IEEE Radio Frequency Integrated Circuits Symposium, 2009, p.343-346

2009

Volltextzugriff (PDF)

High-field Zeeman contribution to the trion binding energy

Physical review. B, Condensed matter, 2002-01, Vol.65 (4), Article 041307

2002

Volltextzugriff (PDF)

Unified electro-thermal stability criterion for bipolar transistors

Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005, 2005, p.37-40

2005

Volltextzugriff (PDF)

Impact of lateral and vertical scaling on the reliability of a low-complexity 200 GHz SiGe:C HBT

Thin solid films, 2006-06, Vol.508 (1), p.318-322

2006

Volltextzugriff (PDF)

Quantum-mechanical spin states and Zeeman-level diagrams of the positively charged exciton

Physical review. B, Condensed matter, 2003-07, Vol.68 (3), Article 035322

2003

Volltextzugriff (PDF)

The influence of lateral device scaling and airgap deep trench isolation on the reliability performance of 200 GHz SiGe:C HBTs

Semiconductor science and technology, 2007-01, Vol.22 (1), p.S9-S12

2007

Volltextzugriff (PDF)

Layout and spacer optimization for high-frequency low-noise performance in HBT's

2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010, p.53-56

2010

Volltextzugriff (PDF)

Experimental observation of the negatively charged exciton states in high magnetic fields

Nanotechnology, 2000-12, Vol.11 (4), p.281-285

2000

Volltextzugriff (PDF)

Energy levels of negatively charged excitons in high magnetic fields

Solid state communications, 2000-01, Vol.115 (8), p.403-406

2000

Volltextzugriff (PDF)

QUBiC4plus: a cost-effective BiCMOS manufacturing technology with elite passive enhancements optimized for 'silicon-based' RF-system-in-package environment

Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005, 2005, p.272-275

2005

Volltextzugriff (PDF)

Magnetophotoluminescence of positively-charged excitons in GaAs quantum wells

Physica. E, Low-dimensional systems & nanostructures, 2002, Vol.12 (1), p.516-519

2002

Volltextzugriff (PDF)

Psychiatric symptoms and mortality in older adults with major psychiatric disorders: results from a multicenter study

European archives of psychiatry and clinical neuroscience, 2023-04, Vol.273 (3), p.627-638

2023

Volltextzugriff (PDF)

Psychiatric symptoms and quality of life in older adults with schizophrenia spectrum disorder: results from a multicenter study

European archives of psychiatry and clinical neuroscience, 2020-09, Vol.270 (6), p.673-688

2020

Volltextzugriff (PDF)

Magnetophotoluminescence of negatively charged excitons in narrow quantum wells

Physical review. B, Condensed matter, 2001-03, Vol.63 (12), Article 125331

2001

Volltextzugriff (PDF)

Magnetic-field dependence of the spin states of the negatively charged exciton in GaAs quantum wells

Physical review. B, Condensed matter, 2002-06, Vol.65 (23), Article 233305

2002

Volltextzugriff (PDF)

Investigation of power and linearity performance for low- and high-voltage SiGe HBTs

2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013, p.9-12

2013

Volltextzugriff (PDF)

An SiGe heterojunction bipolar transistor with very high open-base breakdown voltage

2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014, p.33-36

2014

Volltextzugriff (PDF)

Temperature and geometry dependence of the electrothermal instability of bipolar transistors

2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012, p.1-4

2012

Volltextzugriff (PDF)

Fast noise prediction for process optimization using only standard DC and S-parameter measurements

2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012, p.1-4

2012

Volltextzugriff (PDF)

SiGe:C profile optimization for low noise performance

2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2011, p.166-169

2011

Volltextzugriff (PDF)

1 – 25 von 447

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(239)
Mit Volltextzugriff
(424)

Publikationsform

3 weitere anzeigen...

Weniger anzeigen...

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(229)
Technology
(195)
Project Management
(111)
Operations Research & Management Science
(106)
Engineering
(105)
Management
(76)
Business & Economics
(73)
Social Sciences
(70)
Computer Science
(69)
Scheduling
(64)
Studies
(60)
Project Scheduling
(58)
Engineering, Industrial
(54)
Computer Science, Interdisciplinary Applications
(42)
Operations Research
(39)
Algorithms
(38)
Engineering, Electrical & Electronic
(36)
Earned Value Management
(33)
Exact Sciences And Technology
(33)
Projektmanagement
(33)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

The Illusion of Control: Project Data, Computer Algorithms and Human Intuition for Project Management and Control

A new analytical model for the thermal resistance of deep-trench bipolar transistors

Revised method for extraction of the thermal resistance applied to bulk and SOI SiGe HBTs

RF technology optimization by a fast method for linearity determination

Simultaneous extraction of the base and thermal resistances of bipolar transistors

RF reliability of short channel NMOS devices

High-field Zeeman contribution to the trion binding energy

Unified electro-thermal stability criterion for bipolar transistors

Impact of lateral and vertical scaling on the reliability of a low-complexity 200 GHz SiGe:C HBT

Quantum-mechanical spin states and Zeeman-level diagrams of the positively charged exciton

The influence of lateral device scaling and airgap deep trench isolation on the reliability performance of 200 GHz SiGe:C HBTs

Layout and spacer optimization for high-frequency low-noise performance in HBT's

Experimental observation of the negatively charged exciton states in high magnetic fields

Energy levels of negatively charged excitons in high magnetic fields

QUBiC4plus: a cost-effective BiCMOS manufacturing technology with elite passive enhancements optimized for 'silicon-based' RF-system-in-package environment

Magnetophotoluminescence of positively-charged excitons in GaAs quantum wells

Psychiatric symptoms and mortality in older adults with major psychiatric disorders: results from a multicenter study

Psychiatric symptoms and quality of life in older adults with schizophrenia spectrum disorder: results from a multicenter study

Magnetophotoluminescence of negatively charged excitons in narrow quantum wells

Magnetic-field dependence of the spin states of the negatively charged exciton in GaAs quantum wells

Investigation of power and linearity performance for low- and high-voltage SiGe HBTs

An SiGe heterojunction bipolar transistor with very high open-base breakdown voltage

Temperature and geometry dependence of the electrothermal instability of bipolar transistors

Fast noise prediction for process optimization using only standard DC and S-parameter measurements

SiGe:C profile optimization for low noise performance

Suchergebnisse filtern