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Semiconductor profiling with sub-nm resolution: Challenges and solutions

Applied surface science, 2008-12, Vol.255 (4), p.805-812

Vandervorst, W.

2008

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Linearized radially polarized light for improved precision in strain measurements using micro-Raman spectroscopy

Optics express, 2021-10, Vol.29 (21), p.34531-34551

2021

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Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories

Nanoscale, 2016-07, Vol.8 (29), p.13915-13923

2016

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Chemical vapor deposition of monolayer-thin WS2 crystals from the WF6 and H2S precursors at low deposition temperature

The Journal of chemical physics, 2019-03, Vol.150 (10), p.104703-104703

2019

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Low-temperature Ge and GeSn Chemical Vapor Deposition using Ge2H6

Thin solid films, 2012-02, Vol.520 (8), p.3211-3215

2012

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Evolution of metastable phases in silicon during nanoindentation: mechanism analysis and experimental verification

Nanotechnology, 2009-07, Vol.20 (30), p.305705-305705

2009

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Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

Applied physics letters, 2011-10, Vol.99 (15), p.152103-152103-3

2011

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Nanoscale Localization of an Atom Probe Tip through Electric Field Mapping

Journal of physical chemistry. C, 2020-03, Vol.124 (11), p.6371-6378

2020

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Heteroepitaxy of InP on Si(001) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches: The role of the nucleation layer and the recess engineering

Journal of applied physics, 2014-01, Vol.115 (2)

2014

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Nucleation and growth mechanisms of Al2O3 atomic layerdeposition on synthetic polycrystalline MoS2

The Journal of chemical physics, 2017-02, Vol.146 (5), p.052810-052810

2017

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Chemical vapor deposition of monolayer-thin WS 2 crystals from the WF 6 and H 2 S precursors at low deposition temperature

The Journal of chemical physics, 2019-03, Vol.150 (10), p.104703

2019

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Phase formation and thermal stability of ultrathin nickel-silicides on Si(100)

Applied physics letters, 2010-04, Vol.96 (17), p.173503-173503-3

2010

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Electrical tomography using atomic force microscopy and its application towards carbon nanotube-based interconnects

Nanotechnology, 2012-08, Vol.23 (30), p.305707-305707

2012

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X-ray absorption in pillar shaped transmission electron microscopy specimens

Ultramicroscopy, 2017-06, Vol.177, p.58-68

2017

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Mass calibration of the energy axis in ToF-E elastic recoil detection analysis

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2016-03, Vol.371, p.153-155

2016

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Epitaxial diamond-hexagonal silicon nano-ribbon growth on (001) silicon

Scientific reports, 2015-08, Vol.5 (1), p.12692-12692, Article 12692

2015

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Atom probe tomography analysis of SiGe fins embedded in SiO2: Facts and artefacts

Ultramicroscopy, 2017-08, Vol.179, p.100-107

2017

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Ion-induced roughening and ripple formation on polycrystalline metallic films

New journal of physics, 2013-09, Vol.15 (9), p.93047-20

2013

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Atom-probe for FinFET dopant characterization

Ultramicroscopy, 2011-05, Vol.111 (6), p.535-539

2011

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Laser-assisted atom probe tomography of semiconductors: The impact of the focused-ion beam specimen preparation

Ultramicroscopy, 2018-05, Vol.188, p.19-23

2018

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Diffusion, activation, and recrystallization of boron implanted in preamorphized and crystalline germanium

Applied physics letters, 2005-10, Vol.87 (17)

2005

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Operating-Current Dependence of the Cu-Mobility Requirements in Oxide-Based Conductive-Bridge RAM

IEEE electron device letters, 2015-08, Vol.36 (8), p.775-777

2015

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Quantification of Ge in Si1-xGex by using low-energy Cs+ and O2+ ion beams

Surface and interface analysis, 2013-01, Vol.45 (1), p.402-405

2013

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Outwitting the series resistance in scanning spreading resistance microscopy

Ultramicroscopy, 2016-02, Vol.161, p.59-65

2016

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Observation and understanding of anisotropic strain relaxation in selectively grown SiGe fin structures

Nanotechnology, 2017-04, Vol.28 (14), p.145703-145703

2017

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Semiconductor profiling with sub-nm resolution: Challenges and solutions

Linearized radially polarized light for improved precision in strain measurements using micro-Raman spectroscopy

Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories

Chemical vapor deposition of monolayer-thin WS2 crystals from the WF6 and H2S precursors at low deposition temperature

Low-temperature Ge and GeSn Chemical Vapor Deposition using Ge2H6

Evolution of metastable phases in silicon during nanoindentation: mechanism analysis and experimental verification

Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

Nanoscale Localization of an Atom Probe Tip through Electric Field Mapping

Heteroepitaxy of InP on Si(001) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches: The role of the nucleation layer and the recess engineering

Nucleation and growth mechanisms of Al2O3 atomic layerdeposition on synthetic polycrystalline MoS2

Chemical vapor deposition of monolayer-thin WS 2 crystals from the WF 6 and H 2 S precursors at low deposition temperature

Phase formation and thermal stability of ultrathin nickel-silicides on Si(100)

Electrical tomography using atomic force microscopy and its application towards carbon nanotube-based interconnects

X-ray absorption in pillar shaped transmission electron microscopy specimens

Mass calibration of the energy axis in ToF-E elastic recoil detection analysis

Epitaxial diamond-hexagonal silicon nano-ribbon growth on (001) silicon

Atom probe tomography analysis of SiGe fins embedded in SiO2: Facts and artefacts

Ion-induced roughening and ripple formation on polycrystalline metallic films

Atom-probe for FinFET dopant characterization

Laser-assisted atom probe tomography of semiconductors: The impact of the focused-ion beam specimen preparation

Diffusion, activation, and recrystallization of boron implanted in preamorphized and crystalline germanium

Operating-Current Dependence of the Cu-Mobility Requirements in Oxide-Based Conductive-Bridge RAM

Quantification of Ge in Si1-xGex by using low-energy Cs+ and O2+ ion beams

Outwitting the series resistance in scanning spreading resistance microscopy

Observation and understanding of anisotropic strain relaxation in selectively grown SiGe fin structures

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