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The impact of a classroom intervention on grade 10 students' argumentation skills, informal reasoning, and conceptual understanding of science

Journal of research in science teaching, 2010-10, Vol.47 (8), p.952-977

2010

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Reduction mechanisms for defect densities in GaN using one- or two-step epitaxial lateral overgrowth methods

Journal of applied physics, 2000-05, Vol.87 (9), p.4175-4181

2000

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Buffer free direct growth of GaN on 6H–SiC by metalorganic vapor phase epitaxy

Journal of applied physics, 2000-01, Vol.87 (1), p.577-583

2000

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Epitaxial lateral overgrowth of GaN on Si (111)

Journal of applied physics, 2003-01, Vol.93 (1), p.182-185

2003

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Influence of in situ sapphire surface preparation and carrier gas on the growth mode of GaN in MOVPE

Journal of crystal growth, 1998-05, Vol.187 (2), p.167-177

1998

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Study of open-core dislocations in GaN films on (0001) sapphire

Applied physics letters, 1997-05, Vol.70 (18), p.2434-2436

1997

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Microstructure of GaN epitaxial films at different stages of the growth process on sapphire (0 0 0 1)

Journal of crystal growth, 1997-04, Vol.173 (3-4), p.249-259

1997

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A Two-Step Method for Epitaxial Lateral Overgrowth of GaN

Physica status solidi. A, Applied research, 1999-11, Vol.176 (1), p.567-571

1999

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High quality GaN grown by MOVPE

Journal of crystal growth, 1997-01, Vol.170 (1-4), p.316-320

1997

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In situ growth monitoring of distributed GaN–AlGaN Bragg reflectors by metalorganic vapor phase epitaxy

Applied physics letters, 2002-01, Vol.80 (2), p.174-176

2002

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Measuring preparedness to teach with ICT

Australasian Journal of Educational Technology, 2005-01, Vol.21 (1), p.1-18

2005

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Lateral overgrowth of GaN on patterned GaN/sapphire substrate via selective metal organic vapour phase epitaxy: a route to produce self supported GaN substrates

Journal of crystal growth, 1998-06, Vol.189-190, p.97-102

1998

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Lateral overgrowth of high quality GaN layers on GaN/Al2O3 patterned substrates by halide vapour-phase epitaxy

Journal of crystal growth, 1998-08, Vol.192 (1-2), p.73-78

1998

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Comparative study of GaN layers grown on insulating AlN and conductive AlGaN buffer layers

Semiconductor science and technology, 1999-11, Vol.14 (11), p.L33-L36

1999

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Vertical Cavity InGaN LEDs Grown by MOVPE

Physica status solidi. A, Applied research, 2002-08, Vol.192 (2), p.335-340

2002

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Part-to-part and lot-to-lot variability study of TID effects in bipolar linear devices

2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2016, p.1-8

2016

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TEM Study of the Behavior of Dislocations during ELO of GaN

physica status solidi (b), 1999-11, Vol.216 (1), p.691-695

1999

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Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy

MRS Internet journal of nitride semiconductor research, 1998-01, Vol.3, Article e20

1998

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Microstructural analysis of III–V nitrides grown on 6H–SiC by metal–organic vapour phase epitaxy (MOVPE)

Diamond and related materials, 2000-04, Vol.9 (3-6), p.452-455

2000

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High quality ELO-GAN layers on GaN/Al2O3 patterned substrates by halide vapour phase epitaxy

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-05, Vol.59 (1-3), p.112-116

1999

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Acoustical and Optical Gallium Nitride Waveguides Grown on Si(111) by Metalorganic Vapor Phase Epitaxy

Physica status solidi. A, Applied research, 2001-12, Vol.188 (2), p.537-541

2001

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Establishing open and critical discourses in the science classroom: reflecting on initial difficulties

Research in science education (Australasian Science Education Research Association), 1998, Vol.28 (3), p.317-336

1998

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Study of (Al,Ga)N Bragg Mirrors Grown on Al2O3(0001) and Si(111) by Metalorganic Vapor Phase Epitaxy

Physica status solidi. A, Applied research, 2001-12, Vol.188 (2), p.899-903

2001

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Homoepitaxial layers of gallium nitride grown by metalorganic vapour phase epitaxy

Semiconductor science and technology, 1997-02, Vol.12 (2), p.240-243

1997

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Metal Organic Vapour Phase Epitaxy (MOVPE) Growth of GaN(n)/SiC(p) Heterostructures

Physica status solidi. A, Applied research, 1999-11, Vol.176 (1), p.109-112

1999

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The impact of a classroom intervention on grade 10 students' argumentation skills, informal reasoning, and conceptual understanding of science

Reduction mechanisms for defect densities in GaN using one- or two-step epitaxial lateral overgrowth methods

Buffer free direct growth of GaN on 6H–SiC by metalorganic vapor phase epitaxy

Epitaxial lateral overgrowth of GaN on Si (111)

Influence of in situ sapphire surface preparation and carrier gas on the growth mode of GaN in MOVPE

Study of open-core dislocations in GaN films on (0001) sapphire

Microstructure of GaN epitaxial films at different stages of the growth process on sapphire (0 0 0 1)

A Two-Step Method for Epitaxial Lateral Overgrowth of GaN

High quality GaN grown by MOVPE

In situ growth monitoring of distributed GaN–AlGaN Bragg reflectors by metalorganic vapor phase epitaxy

Measuring preparedness to teach with ICT

Lateral overgrowth of GaN on patterned GaN/sapphire substrate via selective metal organic vapour phase epitaxy: a route to produce self supported GaN substrates

Lateral overgrowth of high quality GaN layers on GaN/Al2O3 patterned substrates by halide vapour-phase epitaxy

Comparative study of GaN layers grown on insulating AlN and conductive AlGaN buffer layers

Vertical Cavity InGaN LEDs Grown by MOVPE

Part-to-part and lot-to-lot variability study of TID effects in bipolar linear devices

TEM Study of the Behavior of Dislocations during ELO of GaN

Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy

Microstructural analysis of III–V nitrides grown on 6H–SiC by metal–organic vapour phase epitaxy (MOVPE)

High quality ELO-GAN layers on GaN/Al2O3 patterned substrates by halide vapour phase epitaxy

Acoustical and Optical Gallium Nitride Waveguides Grown on Si(111) by Metalorganic Vapor Phase Epitaxy

Establishing open and critical discourses in the science classroom: reflecting on initial difficulties

Study of (Al,Ga)N Bragg Mirrors Grown on Al2O3(0001) and Si(111) by Metalorganic Vapor Phase Epitaxy

Homoepitaxial layers of gallium nitride grown by metalorganic vapour phase epitaxy

Metal Organic Vapour Phase Epitaxy (MOVPE) Growth of GaN(n)/SiC(p) Heterostructures

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