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Ptychography retrieval of fully polarized holograms from geometric-phase metasurfaces

Nature communications, 2020-05, Vol.11 (1), p.2651-2651, Article 2651

2020

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Broadband decoupling of intensity and polarization with vectorial Fourier metasurfaces

Nature communications, 2021-06, Vol.12 (1), p.3631-3631, Article 3631

2021

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Metasurface orbital angular momentum holography

Nature communications, 2019-07, Vol.10 (1), p.2986-8, Article 2986

2019

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Erratum: “Influence of the temperature on growth by ammonia source molecular beam epitaxy of wurtzite phase ScAlN alloy on GaN” [APL Mater. 11, 031105 (2023)]

APL materials, 2024-03, Vol.12 (3), p.039901-039901-2

2024

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Correction to Temperature-Induced Four-fold-on-Six-fold Symmetric Heteroepitaxy, Rocksalt SmN on Hexagonal AlN

Crystal growth & design, 2017-08, Vol.17 (8), p.4489-4489

2017

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Displacement Talbot lithography for nano-engineering of III-nitride materials

Microsystems & nanoengineering, 2019-12, Vol.5 (1), p.52-12, Article 52

2019

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Temperature-Induced Four-Fold-on-Six-Fold Symmetric Heteroepitaxy, Rocksalt SmN on Hexagonal AlN

Crystal growth & design, 2016-11, Vol.16 (11), p.6454-6460

2016

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Porous Nitride Light-Emitting Diodes

ACS photonics, 2022-04, Vol.9 (4), p.1256-1263

2022

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Study of nanolaser optical and structural properties at the nanometer scale

BIO web of conferences, 2024, Vol.129, p.32014

2024

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An Etching‐Free Approach Toward Large‐Scale Light‐Emitting Metasurfaces

Advanced optical materials, 2019-07, Vol.7 (14), p.n/a

2019

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Descriptor engineering in machine learning regression of electronic structure properties for 2D materials

Scientific reports, 2023-04, Vol.13 (1), p.5426-5426, Article 5426

2023

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Employing Cathodoluminescence for Nanothermometry and Thermal Transport Measurements in Semiconductor Nanowires

ACS nano, 2021-07, Vol.15 (7), p.11385-11395

2021

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Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation

Applied physics express, 2019-04, Vol.12 (4), p.45007

2019

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Influence of the temperature on growth by ammonia source molecular beam epitaxy of wurtzite phase ScAlN alloy on GaN

APL materials, 2023-03, Vol.11 (3), p.031105-031105-6

2023

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Subliming GaN into Ordered Nanowire Arrays for Ultraviolet and Visible Nanophotonics

ACS photonics, 2019-12, Vol.6 (12), p.3321-3330

2019

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Vector Beam Generation from Standing Hollow GaN Nanowire Lasers on Sapphire Substrates

ACS photonics, 2024-02, Vol.11 (2), p.789-794

2024

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Optimization and uncertainty quantification of gradient index metasurfaces [Invited]

Optical materials express, 2019-02, Vol.9 (2), p.892

2019

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Mesoporous GaN Made by Selective Area Sublimation for Efficient Light Emission on Si Substrate

physica status solidi (b), 2018-05, Vol.255 (5), p.n/a

2018

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Fabrication and growth of GaN-based micro and nanostructures

International journal of nanotechnology., 2012, Vol.9 (3/4/5/6/7), p.412

2012

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Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors

Journal of crystal growth, 2022-09, Vol.593, p.126779, Article 126779

2022

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Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays

Scientific reports, 2020-03, Vol.10 (1), p.5642-5642, Article 5642

2020

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Light Polarization in Tunnel Junction Injected UV Light‐Emitting Diodes

Physica status solidi. A, Applications and materials science, 2022-04, Vol.219 (7), p.n/a

2022

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Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors

Solid-state electronics, 2022-02, Vol.188, p.108210, Article 108210

2022

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Enhanced excitonic emission efficiency in porous GaN

Scientific reports, 2018-10, Vol.8 (1), p.15767-9, Article 15767

2018

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Frontiers in Optics and Photonics

Federico Capasso, Dennis Couwenberg, Federico Capasso, Dennis Couwenberg

2021

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Ptychography retrieval of fully polarized holograms from geometric-phase metasurfaces

Broadband decoupling of intensity and polarization with vectorial Fourier metasurfaces

Metasurface orbital angular momentum holography

Erratum: “Influence of the temperature on growth by ammonia source molecular beam epitaxy of wurtzite phase ScAlN alloy on GaN” [APL Mater. 11, 031105 (2023)]

Correction to Temperature-Induced Four-fold-on-Six-fold Symmetric Heteroepitaxy, Rocksalt SmN on Hexagonal AlN

Displacement Talbot lithography for nano-engineering of III-nitride materials

Temperature-Induced Four-Fold-on-Six-Fold Symmetric Heteroepitaxy, Rocksalt SmN on Hexagonal AlN

Porous Nitride Light-Emitting Diodes

Study of nanolaser optical and structural properties at the nanometer scale

An Etching‐Free Approach Toward Large‐Scale Light‐Emitting Metasurfaces

Descriptor engineering in machine learning regression of electronic structure properties for 2D materials

Employing Cathodoluminescence for Nanothermometry and Thermal Transport Measurements in Semiconductor Nanowires

Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation

Influence of the temperature on growth by ammonia source molecular beam epitaxy of wurtzite phase ScAlN alloy on GaN

Subliming GaN into Ordered Nanowire Arrays for Ultraviolet and Visible Nanophotonics

Vector Beam Generation from Standing Hollow GaN Nanowire Lasers on Sapphire Substrates

Optimization and uncertainty quantification of gradient index metasurfaces [Invited]

Mesoporous GaN Made by Selective Area Sublimation for Efficient Light Emission on Si Substrate

Fabrication and growth of GaN-based micro and nanostructures

Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors

Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays

Light Polarization in Tunnel Junction Injected UV Light‐Emitting Diodes

Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors

Enhanced excitonic emission efficiency in porous GaN

Frontiers in Optics and Photonics

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