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Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication

Nano letters, 2016-03, Vol.16 (3), p.1863-1868

2016

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Ge doped GaN and Al0.5Ga0.5N-based tunnel junctions on top of visible and UV light emitting diodes

Journal of applied physics, 2019-12, Vol.126 (22)

2019

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Unlocking perpendicular magnetic anisotropy with Gd substitution in SmN

Applied physics letters, 2023-02, Vol.122 (9)

2023

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Photoluminescence properties of porous GaN and (Ga,In)N/GaN single quantum well made by selective area sublimation

Optics express, 2017-12, Vol.25 (26), p.33243

2017

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InGaN islands and thin films grown on epitaxial graphene

Nanotechnology, 2020-10, Vol.31 (40), p.405601-405601

2020

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Bandwidth-unlimited polarization-maintaining metasurfaces

Science advances, 2021-01, Vol.7 (5)

2021

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Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: Influence on indirect exciton diffusion

Journal of applied physics, 2024-03, Vol.135 (9)

2024

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Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus Si x N y

Nanotechnology, 2023-03, Vol.34 (24), p.245602

2023

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Lasing up to 380 K in a sublimated GaN nanowire

Applied physics letters, 2020-06, Vol.116 (22)

2020

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Magnetoresistance of epitaxial GdN films

Journal of applied physics, 2020-12, Vol.128 (21)

2020

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Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence

Journal of applied physics, 2022-07, Vol.132 (3)

2022

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Mapping of the electrostatic potentials in MOCVD and hybrid GaN tunnel junctions for InGaN/GaN blue emitting light emitting diodes by off-axis electron holography correlated with structural, chemical, and optoelectronic characterization

Journal of applied physics, 2021-07, Vol.130 (2)

2021

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Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition

Applied physics letters, 2010-10, Vol.97 (17), p.171909-171909-3

2010

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Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction

Nanotechnology, 2020-11, Vol.31 (46), p.465706-465706

2020

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Optical properties of InxGa1−xN/GaN quantum-disks obtained by selective area sublimation

Journal of crystal growth, 2017-11, Vol.477, p.262-266

2017

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Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition

Journal of applied physics, 2013-05, Vol.113 (20)

2013

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Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition

Applied physics letters, 2014-02, Vol.104 (7)

2014

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AlN buffer layer growth for GaN epitaxy on (111) Si: Al or N first?

Journal of crystal growth, 2009-06, Vol.311 (12), p.3278-3284

2009

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Highly resistive epitaxial Mg-doped GdN thin films

Applied physics letters, 2015-01, Vol.106 (2)

2015

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On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy

Applied physics letters, 2011-01, Vol.98 (1), p.011914-011914-3

2011

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Experimental and ab initio study of Mg doping in the intrinsic ferromagnetic semiconductor GdN

Journal of applied physics, 2018-03, Vol.123 (11)

2018

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Growth mode and electric properties of graphene and graphitic phase grown by argon–propane assisted CVD on 3C–SiC/Si and 6H–SiC

Journal of crystal growth, 2012-06, Vol.349 (1), p.27-35

2012

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Role of magnetic polarons in ferromagnetic GdN

Physical review. B, Condensed matter and materials physics, 2013-01, Vol.87 (3), Article 035202

2013

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From spiral growth to kinetic roughening in molecular-beam epitaxy of GaN(0001)

Physical review. B, Condensed matter and materials physics, 2004-03, Vol.69 (12), Article 125329

2004

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Structural trends in Si dots formation on SiC surfaces using CVD environment

Journal of crystal growth, 2014-10, Vol.404, p.157-163

2014

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Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication

Ge doped GaN and Al0.5Ga0.5N-based tunnel junctions on top of visible and UV light emitting diodes

Unlocking perpendicular magnetic anisotropy with Gd substitution in SmN

Photoluminescence properties of porous GaN and (Ga,In)N/GaN single quantum well made by selective area sublimation

InGaN islands and thin films grown on epitaxial graphene

Bandwidth-unlimited polarization-maintaining metasurfaces

Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: Influence on indirect exciton diffusion

Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus Si x N y

Lasing up to 380 K in a sublimated GaN nanowire

Magnetoresistance of epitaxial GdN films

Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence

Mapping of the electrostatic potentials in MOCVD and hybrid GaN tunnel junctions for InGaN/GaN blue emitting light emitting diodes by off-axis electron holography correlated with structural, chemical, and optoelectronic characterization

Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition

Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction

Optical properties of InxGa1−xN/GaN quantum-disks obtained by selective area sublimation

Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition

Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition

AlN buffer layer growth for GaN epitaxy on (111) Si: Al or N first?

Highly resistive epitaxial Mg-doped GdN thin films

On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy

Experimental and ab initio study of Mg doping in the intrinsic ferromagnetic semiconductor GdN

Growth mode and electric properties of graphene and graphitic phase grown by argon–propane assisted CVD on 3C–SiC/Si and 6H–SiC

Role of magnetic polarons in ferromagnetic GdN

From spiral growth to kinetic roughening in molecular-beam epitaxy of GaN(0001)

Structural trends in Si dots formation on SiC surfaces using CVD environment

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